NPN DARLINGTON TRANSISTOR 131 Search Results

TRANSISTOR AS3

Abstract: transistor code AS3 On semiconductor date Code sot-223
Contextual Info: BSP52T1 Preferred Device NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is

transistor code AS3

Abstract: TRANSISTOR AS3 BSP52T1 BSP52T1G BSP62T1 PH* transistor
Contextual Info: BSP52T1 Preferred Device NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is

Contextual Info: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,

AYW marking code IC

Abstract: BSP52T1 BSP52T1G BSP52T3 BSP52T3G BSP62T1 transistor code AS3
Contextual Info: BSP52T1, BSP52T3 Preferred Devices NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is

NJD35N04G

Abstract: NJD35N04T4G
Contextual Info: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area

NJD35N04G

Abstract: NJD35N04T4G
Contextual Info: NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. http://onsemi.com Features • Exceptional Safe Operating Area

ncv1413bdg

Abstract: MC1413DG MC1413DR2 pin details of ULN2003A ULN2003A 15 pin details application MC1413BDR2G MC1413P IR P 648 H MC1413 MC1413B
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

100 amp npn darlington power transistors

Abstract: MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS

bu826

Abstract: BU626 BU826A SOT93 npn darlington transistor 131
Contextual Info: 45E D PHILIPS INTERNATIONAL E3 711002b □ D3CH2C1 T Ö P H I N '‘ BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circuit w ith integrated speed-up diode in a plastic SO T93 envelope, intended for fast switching application.

"Darlington Transistor"

Abstract: 131 Transistor darlington power transistor 2N6059 CP178
Contextual Info: Central TM PROCESS CP178 Power Transistor Semiconductor Corp. NPN Darlington Transistor PROCESS DETAILS Die Size 131 x 131 MILS Die Thickness 12.5 ±1.0 MILS Emitter Bonding Pad Area 27 x 36 MILS Base Bonding Pad Area 20 x 37 MILS Top Side Metalization Al - 50,000Å

MJ10002

Abstract: bem diode
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA SEM ICO N DUCTO R M J1 0 0 0 2 TECHNICAL DATA D e sig n e rs D a ta Sheet 10 A M PER E NPN SILICON SWITCHMODE S E R IE S NPN SILICO N POWER DARLIN GTON TRAN SISTO RS POWER DARLINGTON TRAN SISTORS The MJ10002 Darlington transistor is designed for high-voltage,

MMBT6427LT1

Abstract: MMBT6427LT1G
Contextual Info: MMBT6427LT1 Preferred Device Darlington Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 40 Vdc

ESM4045AV

Abstract: ESM4045A FASTON ESM4045D CSA50 4045D
Contextual Info: N AMER PHILIPS/DISCRETE bl E D • bb5 3 ^ 3 ]> D Q E â b 0 3 344 *APX ESM4045A V ESM4045D(V) SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

MP4502

Contextual Info: TOSHIBA MP4502 TOSHIBA PO W E R TRANSISTOR M O D ULE SILICON NPN EPITA XIAL TYPE DARLINGTON PO W E R TRANSISTOR 4 IN 1 M P4 50 2 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 31.5 ± 0.2

MPSA27RLRAG

Abstract: MPSA27 MPSA27G MPSA27RLRA MPSA27RLRM MPSA27RLRMG MPS-A27 Marking code mps
Contextual Info: MPSA27 Darlington Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 60 Vdc Emitter −Base Voltage VEBO 10 Vdc Collector Current − Continuous

MJD122T4G

Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

MPSW13

Abstract: MPSW13RLRA MPSW13RLRAG MARKING CODE W13 mps w13 Marking code mps
Contextual Info: MPSW13 One Watt Darlington Transistor NPN Silicon http://onsemi.com Features • Pb−Free Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage

Contextual Info: MPSW13 One Watt Darlington Transistor NPN Silicon http://onsemi.com Features • Pb−Free Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage

Contextual Info: Data Sheet PS2702-1 R08DS0099EJ0300 Rev.3.00 Jan 29, 2013 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected phototransistor.

DARLINGTON 3A 100V npn array

Contextual Info: MP6901 SILICON NPN/PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Package with Heat Sink Isolated to Lead. (SIP 12 Pin)

2n6284 equivalent

Abstract: S16884 2N6283 2N6284
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 February 2009. MIL-PRF-19500/504E 18 November 2008 SUPERSEDING MIL-PRF-19500/504D 29 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,

2n6059 equivalent

Abstract: 2N6059 JANTX equivalent 2N6058 2N6059 C-2688
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 December 2008. MIL-PRF-19500/502E 4 September 2008 SUPERSEDING MIL-PRF-19500/502D 12 March 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,

E2B20

Abstract: Transistor bdy 11 BDY88 BDY87 TRANSISTOR D131 transistor 1005 oj SWITCHING TRANSISTOR 60V BDY89 D129 D131
Contextual Info: BDY 87, BDY 88, BDY 89 NPN Darlington stages for AF and switching applications BDY 87, BDY 88, and BDY 89 are hig h -p o w e red arid highly am plifying NPN o u tp u t stages for AF and s w itch in g applications. They consist of tw o single-diffused NPN transistor systems each in com pound connection in a case 9 A 4 DIN 41875 S O T-9

H11B255

Abstract: sot-90B OPTOCOUPLER dc
Contextual Info: H11B255 _ y \ _ OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and an npn silicon photo­ Darlington transistor. Features • High maxim um o u tp u t voltage • V ery high o u tp u t/in p u t DC current transfer ratio