NPN BIAS ESM Search Results

RN1107F

Abstract: RN1108F RN1109F RN2107F
Contextual Info: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1107F,RN1108F,RN1109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors.

RN1114F

Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design

Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design

RN1114F

Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

RN1114F

Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

KRC416E

Abstract: KRC422E 422E KRC417E KRC418E KRC419E KRC420E KRC421E r2kq
Contextual Info: KRC416EKRC422E SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

marking x2

Abstract: RN1130F RN2130F MARKINGX2
Contextual Info: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN2101F

Abstract: 1104F 1106F RN1101F RN1102F RN1103F RN1104F RN1105F RN1106F RN2106F
Contextual Info: RN1101F~RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design

Contextual Info: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1131F

Abstract: RN1132F RN2131F RN2132F
Contextual Info: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

406E

Abstract: KRC401E KRC402E KRC403E KRC404E KRC405E KRC406E NPN bias ESM
Contextual Info: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process.

ESM 310

Abstract: KRC407E KRC408E KRC409E NPN bias ESM
Contextual Info: SEMICONDUCTOR KRC407E~KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process

RN1130F

Abstract: RN2130F
Contextual Info: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

422E

Abstract: KRA421E KRC416E KRC417E KRC418E KRC419E KRC420E KRC421E KRC422E NPN bias ESM
Contextual Info: SEMICONDUCTOR KRC416E~KRC422E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D H G A 2 Reduce a Quantity of Parts and Manufacturing Process.

RN1130F

Abstract: RN2130F
Contextual Info: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

kra421

Contextual Info: SEMICONDUCTOR KRC416E~KRC422E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D H G A 2 ・Reduce a Quantity of Parts and Manufacturing Process.

RN2130F

Contextual Info: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1112F

Abstract: RN1113F RN2112F RN2113F
Contextual Info: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

KRC411E

Abstract: KRC410E KRC412E KRC413E KRC414E NPN bias ESM
Contextual Info: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D G A 2 C H Reduce a Quantity of Parts and Manufacturing Process.

KRC407E

Contextual Info: SEMICONDUCTOR KRC407E~KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design D G A 2 C H ・Reduce a Quantity of Parts and Manufacturing Process

KRC403e

Contextual Info: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G A 2 C H ・Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G A 2 C 3 1 H ・Reduce a Quantity of Parts and Manufacturing Process.