1106F Search Results

AD6M

Abstract: DSN16 "5ESS"
Contextual Info: AT&T Product Specification Sheet Microelectronics 1106F Initial Us« 5ESS/SM2000 0SN16 Description 144 The 1106F DSN 16 provides the interconnection network and control for intercommunications between an array of DSPs and provides access to a common shared memory. The

Contextual Info: 1106FA Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3

Contextual Info: 1106F Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1

Contextual Info: 1106FC Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3

Contextual Info: 1102A 1104A 1106A 1108A 1110A SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY V rwM = IE = 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA 1108UFA 1110UFA Assemblies available with JAN, JANTX, or JA N TXV discrete diodes. Consult sales office. 2 0 0 -1 0 0 0 V

1102F

Abstract: 1102FF 1102UFF 1104F 1104FF 1104UFF 1106F 1106FF 1106UFF 1108F
Contextual Info: b3E 5 • ^514054 □ □ □ □ 4 C]D hQ2 ■ V f l l 1102F 1104F 1106F 1108F 1110F SINGLE PHASE BRIDGE 70nS*150nS«3000nS RECOVERY V RWm IF 1102FF 1104FF 1106FF 1108FF 1110FF 1102UFF 1104UFF 1106UFF 1108UFF 1110UFF AC = 2 00 -1000V = 1.4 - 1.5A Assemblies available with

Contextual Info: 1106FF Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3

Contextual Info: 1106FE Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3

Contextual Info: 1106FB Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3

1108b

Abstract: ac 187 pin configuration 1102B 1102FB 1102UFB 1104B 1104FB 1106B 1106FB 1108FB
Contextual Info: b3E ]> •ìSmfiS4 GGGOMflfl TS4 SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY « V i l i 1102B 1104B 1106B 1108B 1110B 1102FB 1104FB 1106FB 1108FB 1110FB 1102UFB 1104UFB 1106UFB 1108UFB 1110UFB AC VpwM = 200-1000V lF = 1.4-1.5A * Assemblies available with

1102FA

Abstract: 1102UFA 1104FA 1104UFA 1106FA 1106UFA 1108FA 1108UFA 1110FA 1110UFA
Contextual Info: tiBE D • ^ 5 1 4 0 5 4 Q G G G M Û b lôl ■■ V H I 1102A 1104A 1106A 1108A 1110A SINGLE PHASE BRIDGE 70nS»150nS*3000nS RECOVERY V RWM D„„. IF = = 2 0 0 -1000V 1.4 - 1.5A 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA 1108UFA 1110UFA

Contextual Info: SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY 1102UFF 1104UFF 1106UFF 1108UFF 1110UFF 1102FF 1104FF 1106FF 1108FF 1110FF 1102F 1104F 1106F 1108F 1110F AC V rwm = 2 0 0 -1 0 0 0 V I = 1.4-1.5A Assemblies available with JAN, JANTX, or JAN TXV discrete diodes. Consult

ac 187 pin configuration

Contextual Info: SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY 1102B 1104B 1106B 1108B 1110B 1102FB 1104FB 1106FB 1108FB 1110FB 1102UFB 1104UFB 1106UFB 1108UFB 1110UFB AC V RWM = 2 0 0 - 1000V = I 1.4-1.5A Assemblies available with JAN, JANTX, or JA N TXV discrete diodes. Consult

Contextual Info: 1106FD Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3

Contextual Info: TOSHIBA R N 1 101 F ~ R N 1 1 0 6 F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1101F, RN1102F, RN1103F RN1104F, RN1105F, 1106F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors

RN1104FV

Abstract: RN2101FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV
Contextual Info: RN1101FV~1106FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, 1106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm Ultra-small package, suited to very high density mounting

1106T

Abstract: 1113S 1113FR
Contextual Info: COPAL ELECTRONICS 抵抗温度係数が優れた1回転型巻線トリマ 1回転型巻線トリマ SINGLE TURN WIREWOUND TRIMMERS λ-6/λ-１３ RoHS 指令対応 RoHS compliant 内部構造図 INTERNAL STRUCTURE λ-13T 7 6 5 4 1 2 3 名 称 材 料

RN1101FT

Abstract: RN1102FT RN1103FT RN1104FT RN1105FT RN1106FT RN2101FT RN2106FT
Contextual Info: RN1101FT~1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, 1106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN1101FT~1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, 1106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm

Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm

ac 187 pin configuration

Abstract: LD 1106 AS
Contextual Info: SINGLE PHASE FULL WAVE BRIDGES 70ns-3000ns Recovery • 1-4A - 3.0A ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number 2 Working Reverse Voltage Average Rectified Current @TC (to) (Vrwm) Forward Voltage (lr) (Vf) 100°C 25°C 55°C Volts Reverse

1100e

Abstract: 1102E 1102FE 1102UFE 1106E 1106FE 1106UFE 1110E 1110FE 1110UFE
Contextual Info: 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102E - 1110E 1102FE - 1110FE 1102UFE - 1110UFE ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current

RN1101F

Abstract: RN2101F 1104F 1106F RN1102F RN1103F RN1104F RN1105F RN1106F RN2106F
Contextual Info: RN1101F~1106F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101F,RN1102F,RN1103F RN1104F,RN1105F,1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l With built-in bias resistors l Simplify circuit design

RN1101FT

Abstract: RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
Contextual Info: RN2101FT~RN2106FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN2106FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用