2118F Search Results

RN1114FT

Abstract: RN1115FT RN1116FT RN1117FT RN1118FT RN2114FT
Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Built-in bias resistors z Enabling simplified circuit design

Contextual Info: RN2114FT~2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, 2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design

Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Built-in bias resistors z Enabling simplified circuit design

Contextual Info: RN2114FV~2118FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FV,RN2115FV,RN2116FV ,RN2117FV,2118FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 With built-in bias resistors

RN1114F

Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

RN1114FT

Abstract: RN1115FT RN1116FT RN1117FT RN1118FT RN2114FT
Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design

Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

Contextual Info: RN2114F~2118F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114F,RN2115F,RN2116F,RN2117F,2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design

Contextual Info: RN2114FT~2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, 2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design

RN1114F

Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

RN1114F

Abstract: RN1118F RN2114F RN2115F RN2116F RN2117F RN2118F
Contextual Info: RN2114F~2118F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114F,RN2115F,RN2116F,RN2117F,2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design

RN2114FV

Abstract: RN2115FV RN2116FV RN2117FV RN2118FV
Contextual Info: RN2114FV~2118FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FV,RN2115FV,RN2116FV RN2117FV,2118FV Unit: mm 0.22±0.05 1.2±0.05 0.32±0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.8±0.05 Complementary to RN2114FV~2118FV

RN1114F

Abstract: RN1118F RN2114F RN2115F RN2116F RN2117F RN2118F
Contextual Info: RN2114F～2118F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2114F,RN2115F,RN2116F,RN2117F,2118F ○ スイッチング用 ○ インバータ用 ○ インタフェース回路用 ○ ドライバ回路用

RN1114FT

Abstract: RN1115FT RN1116FT RN1117FT RN1118FT RN2114FT
Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Built-in bias resistors z Enabling simplified circuit design

Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design

Contextual Info: RN2114F~2118F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114F,RN2115F,RN2116F,RN2117F,2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design

RN1114FT

Abstract: RN1118FT RN2114FT RN2115FT RN2116FT RN2117FT RN2118FT
Contextual Info: RN2114FT~2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, 2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design

RN1114F

Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design

Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design

Contextual Info: T-l 3/4 Blinking LED Lamps FEATURES • T-1 3/4 blinking LED • Diffused lens MAXIMUM RATINGS Ta = 25°C OPERATING V O LT A G E (VI REVERSE V O LT A G E (VR ) (V) OPERATING T EM PER AT U R E (Topr) (°C| STORAGE T EM PER AT U R E (T ,ta ) l°C ) M T1118F-R G

Contextual Info: Terminations SC Type DC - 11.0 GHz Performance •Wideband Performance ■5 Watt Model available ■Low VSWR - 50 Ohm - High Performance. ■Rugged Stainless Steel Construction Midwest Microwave's SC type series of coaxial low and medium power Terminations provide temperature stable, performance in

Contextual Info: RN2114FT~2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2114FT, RN2115FT, RN2116FT, RN2117FT, 2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm

Contextual Info: RN2114FT~2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, 2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm Built-in bias resistors Enabling simplified circuit design

Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design