NP16N0 Search Results

NP16N0

Abstract: NP16N04YUG
Contextual Info: Preliminary Data Sheet NP16N04YUG R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)

Contextual Info: Preliminary Data Sheet NP16N04YUG R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)

NP16N06YLL

Contextual Info: Data Sheet NP16N06YLL R07DS1124EJ0100 Rev.1.00 Oct 30, 2013 60 V – 16 A – N-channel Power MOS FET Application: Automotive Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

R2A11301FT

Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
Contextual Info: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position

"seat heater"

Abstract: np28n10sde NP32N055SLE NP100N055PDH NP74N04YUG NP50P06SDG NP100N055MUH NP15P04SLG NP36N055SLE NP36P06SLG
Contextual Info: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 mΩ • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology: