NP16 Search Results

NP160N04TUJ

Contextual Info: Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

Contextual Info: PGA / ZIF NP161 Series CHARACTERISTICS Insulation Resistance Withstanding Voltage Contact Resistance Operating Temperature L000M Q minimum at 500V DC 700VAC for one minute 30mQ maximum at 10mA/20mV -55°C ~ +170°C MATERIALS and FINISH Body PEI GF UL94V-0

Contextual Info: Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

NP16N0

Abstract: NP16N04YUG
Contextual Info: Preliminary Data Sheet NP16N04YUG R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)

Contextual Info: Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

NP160N04TUK

Contextual Info: Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

36101

Contextual Info: PGA / ZIF NP161 Series NP161-289 02-MF-G 4-BF Socket Series No. of Leads Design No. No Mark: Without Mounting Flange MF: With Mounting Flange Insulation Resistance: Withstanding Voltage: Contact Resistance: Operating Temperature: Contact Plating Gold Terminal Style

d1941

Abstract: NP161N04TUG MP-25ZT 161N04
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP161N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP161N04TUG-E1-AY Note

ND16AT

Abstract: NP16AT NP16BT NP16DT NP16MT np16g
Contextual Info: GENL ÏNSTR/ POWER ~fi7 DE I 30^0137 00D2 47 7 0 y - ¿ 3 - o r NP16 NP16 M T :;í?16ÍfiM P ER E -í'SIL' C O N ¡R E eT |FtER - .N s í f S » VOLTAGE RANQE 50 to 1000 Volts CURRENT 16.0 Amperes TO-220 38 (9 65 .139 (353) .101 (4 09) r _14_(3_56J

160N04

Abstract: MP-25ZT nec a640
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note

d1875

Abstract: 160N04 D18754EJ1V0DS00 NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TUG-E1-AY Note

Contextual Info: NP16AT THRU NP16MT HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 16.0 Ampere FEATURES TO-220CT ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 •190M-83 .160 4.06) •055(1.48) H4SÜ.TO

NP1610

Abstract: cookie
Contextual Info: 90369 NP1610 5/16/00 3:40 PM Page 1 Content-Aware Load-Balancing Increasing Web farm intelligence 90369 NP1610 5/16/00 3:40 PM Page 2 Content-Aware Load-Balancing: Increasing Web Farm Intelligence Contents Introduction 3 Content Awareness Explained 3 How Content Awareness is Used

160N04

Abstract: D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY NP160N04TDG To-263-7 MP-25ZT
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note

Contextual Info: Preliminary Data Sheet NP16N04YUG R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)

Contextual Info: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

Contextual Info: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

Contextual Info: PGA / ZJF NP161 Series CHARACTERISTICS Insulation Resistance Withstanding Voltage Contact Resistance Operating Temp. 1,000M£2 minimum at 500 VDC 700 VAC for one minute 30mQ max. at 10mA/20mV -55°C - + 170°C MATERIAL Body PEI GF UL94V-0 Contact BeCu, Gold over Nickel

WLGW2011BRW

Abstract: WEAP2011BRW WLGW2011BAK WEAP2011BAK projects based on mobile communication and networking APWE1120 wud2011bww WEAP2011BJP yagi antennas WLPI2000BWW
Contextual Info: NP1690.05e.qxd 9/11/01 2:52 PM Page 3 Intel 802.11b Wireless Networking for Large Organizations Networks as mobile as the people who use them Now you can be connected without being tied down – with Intel® PRO/Wireless LAN Adapters and Access Points. Fast and compatible

NP16N06YLL

Contextual Info: Data Sheet NP16N06YLL R07DS1124EJ0100 Rev.1.00 Oct 30, 2013 60 V – 16 A – N-channel Power MOS FET Application: Automotive Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance

NP160N055TUK

Contextual Info: Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

nP1609

Contextual Info: 90370 NP1609 5/16/00 4:47 PM Page 1 Transactional LoadBalancing Systems Delivering true server availability 90370 NP1609 5/16/00 4:47 PM Page 2 Transactional Load-Balancing Systems: Delivering True Server Availability Contents Executive Summary 3 Moving Beyond Simple Availability Checking

Contextual Info: Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

Contextual Info: A Table Of Contents ^Arrays Pages Pin Grid Arrays / Zero Insertion Force PG A/ZIF PG A/ZIF PG A/ZIF Open top PG A/ZIF (Interstitial) PGA / ZIF (Open Top, Interstitial) NP89 NP161 NP171 NP236 NP178 9-10 11-12 13-14 15-16 17-18 IC264 NP276 19 20-21 Ball Grid Arrays