NP16 Search Results
NP16 Datasheets (27)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NP16 | Unknown | Scan | 100.98KB | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TDG |
![]() |
SWITCHING N-CHANNEL POWER MOS FET | Original | 293.13KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TDG-E1-AY |
![]() |
SWITCHING N-CHANNEL POWER MOS FET | Original | 293.12KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TDG-E1-AY |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263 | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TDG-E2-AY |
![]() |
SWITCHING N-CHANNEL POWER MOS FET | Original | 293.12KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TUG |
![]() |
SWITCHING N-CHANNEL POWER MOS FET | Original | 283.47KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TUG-E1-AY |
![]() |
MOS FIELD EFFECT TRANSISTOR | Original | 283.46KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TUG-E1-AY |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263-7 | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TUG-E2-AY |
![]() |
MOS FIELD EFFECT TRANSISTOR | Original | 283.46KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TUJ-E1-AY |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263-7 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TUJ-E2-AY |
![]() |
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR | Original | 191.15KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N04TUK-E1-AY |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N055TUJ-E1-AY |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 160A TO-263-7 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N055TUJ-E2-AY |
![]() |
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR | Original | 203.56KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP160N055TUK-E1-AY |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 160A TO-263 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP161-19604MF-G4-BF |
![]() |
Pin Grid Array / Zero Insertion Force (PGA / ZIF) | Original | 50.33KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP161-28902MF-G4-BF |
![]() |
Pin Grid Array / Zero Insertion Force (PGA / ZIF) | Original | 50.33KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP161N04TUG-E1-AY |
![]() |
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263-7 | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP16AT | General Instrument | 50 V, 16 A, silicon rectifier | Scan | 100.99KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP16BT | General Instrument | 100 V, 16 A, silicon rectifier | Scan | 100.99KB | 2 |
NP16 Price and Stock
Renesas Electronics Corporation NP16N06YLL-E1-AYABU / MOSFET |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
NP16N06YLL-E1-AY | Cut Tape | 4,221 | 1 |
|
Buy Now | |||||
![]() |
NP16N06YLL-E1-AY | 20 Weeks | 2,500 |
|
Buy Now | ||||||
Renesas Electronics Corporation NP16N06QLK-E1-AYMOSFET 2N-CH 60V 16A 8HSON |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
NP16N06QLK-E1-AY | Cut Tape | 4,094 | 1 |
|
Buy Now | |||||
![]() |
NP16N06QLK-E1-AY | Reel | 18 Weeks | 2,500 |
|
Buy Now | |||||
![]() |
NP16N06QLK-E1-AY |
|
Get Quote | ||||||||
![]() |
NP16N06QLK-E1-AY | 727 |
|
Buy Now | |||||||
![]() |
NP16N06QLK-E1-AY | 20 Weeks | 2,500 |
|
Buy Now | ||||||
HellermannTyton SNP16GHS0M4CBL CLAMP HOSE BLACK |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SNP16GHS0M4 | Bag | 3,000 | 1,000 |
|
Buy Now | |||||
![]() |
SNP16GHS0M4 | 782 |
|
Buy Now | |||||||
![]() |
SNP16GHS0M4 | Bulk | 163 | 1 |
|
Buy Now | |||||
![]() |
SNP16GHS0M4 | Bulk | 1,000 |
|
Buy Now | ||||||
Fraenkische NTBN-P16FIPLOCK, LOCKNUT, PG16, BRASS-NI |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
NTBN-P16 | Bulk | 975 | 1 |
|
Buy Now | |||||
Renesas Electronics Corporation NP160N055TUK-E1-AYMOSFET N-CH 55V 160A TO263-7 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
NP160N055TUK-E1-AY | Reel | 800 | 800 |
|
Buy Now | |||||
![]() |
NP160N055TUK-E1-AY |
|
Get Quote | ||||||||
![]() |
NP160N055TUK-E1-AY | 20 Weeks | 800 |
|
Buy Now |
NP16 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
NP160N04TUJContextual Info: Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance |
Original |
NP160N04TUJ R07DS0021EJ0100 NP160N04TUJ AEC-Q101 O-263-7pin, | |
Contextual Info: PGA / ZIF NP161 Series CHARACTERISTICS Insulation Resistance Withstanding Voltage Contact Resistance Operating Temperature L000M Q minimum at 500V DC 700VAC for one minute 30mQ maximum at 10mA/20mV -55°C ~ +170°C MATERIALS and FINISH Body PEI GF UL94V-0 |
OCR Scan |
NP161 L000M 700VAC 10mA/20mV UL94V-0 NP161-289 02-MF-G 161-19604-G | |
Contextual Info: Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
NP160N04TUK R07DS0543EJ0100 NP160N04TUK AEC-Q101 NP160N04TUK-E1-AY NP160N04TUK-E2-AY O-263-7pin MP-25ZT) | |
NP16N0
Abstract: NP16N04YUG
|
Original |
NP16N04YUG R07DS0362EJ0100 NP16N04YUG AEC-Q101 NP16N04YUG-E1-AY NP16N04YUG-E2-AY NP16N0 | |
Contextual Info: Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
NP160N055TUK R07DS0592EJ0100 NP160N055TUK AEC-Q101 NP160N055TUK-E1-AY NP160N055TUK-E2-AY O-263-7pin MP-25ZT) | |
NP160N04TUKContextual Info: Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
NP160N04TUK R07DS0543EJ0100 NP160N04TUK AEC-Q101 NP160N04TUK-E1-AY NP160N04TUK-E2-AY O-263-7pin MP-25ZT) | |
36101Contextual Info: PGA / ZIF NP161 Series NP161-289 02-MF-G 4-BF Socket Series No. of Leads Design No. No Mark: Without Mounting Flange MF: With Mounting Flange Insulation Resistance: Withstanding Voltage: Contact Resistance: Operating Temperature: Contact Plating Gold Terminal Style |
Original |
NP161 NP161-289 02-MF-G 10mA/20mV NP161-19604-G4-BF NP161-28902-G4-BF NP161-36101-G4-BF 36101 | |
d1941
Abstract: NP161N04TUG MP-25ZT 161N04
|
Original |
NP161N04TUG NP161N04TUG NP161N04TUG-E1-AY NP161N04TUG-E2-AY O-263-7pin MP-25ZT) d1941 MP-25ZT 161N04 | |
ND16AT
Abstract: NP16AT NP16BT NP16DT NP16MT np16g
|
OCR Scan |
00Q2477 NP16AT NP16MT /16AMPERE MIL-STD-19500. T0-220 MIL-STD-202, O-220 ND16AT NP16BT NP16DT NP16MT np16g | |
160N04
Abstract: MP-25ZT nec a640
|
Original |
NP160N04TDG NP160N04TDG NP160N04TDG-E1-AY NP160N04TDG-E2-AY O-263-7pin MP-25ZT) 160N04 MP-25ZT nec a640 | |
d1875
Abstract: 160N04 D18754EJ1V0DS00 NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin
|
Original |
NP160N04TUG NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) d1875 160N04 D18754EJ1V0DS00 NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin | |
Contextual Info: NP16AT THRU NP16MT HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 16.0 Ampere FEATURES TO-220CT ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 •190M-83 .160 4.06) •055(1.48) H4SÜ.TO |
OCR Scan |
NP16AT NP16MT O-220CT 190M-83) | |
NP1610
Abstract: cookie
|
Original |
NP1610 0500/OC/LM/PP/10K NP1610 cookie | |
160N04
Abstract: D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY NP160N04TDG To-263-7 MP-25ZT
|
Original |
NP160N04TDG NP160N04TDG NP160N04TDG-E1-AY NP160N04TDG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) 160N04 D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY To-263-7 MP-25ZT | |
|
|||
Contextual Info: Preliminary Data Sheet NP16N04YUG R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) |
Original |
NP16N04YUG R07DS0362EJ0100 NP16N04YUG AEC-Q101 NP16N04YUG-E1-AY NP16N04YUG-E2-AY exter9044 | |
Contextual Info: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance |
Original |
NP160N055TUJ R07DS0022EJ0100 NP160N055TUJ AEC-Q101 O-263-7pin, | |
Contextual Info: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance |
Original |
NP160N055TUJ R07DS0022EJ0100 NP160N055TUJ AEC-Q101 O-263-7pin, | |
Contextual Info: PGA / ZJF NP161 Series CHARACTERISTICS Insulation Resistance Withstanding Voltage Contact Resistance Operating Temp. 1,000M£2 minimum at 500 VDC 700 VAC for one minute 30mQ max. at 10mA/20mV -55°C - + 170°C MATERIAL Body PEI GF UL94V-0 Contact BeCu, Gold over Nickel |
OCR Scan |
NP161 10mA/20mV UL94V-0 NP161-289 NP161-19604-G4-BF NP161-28902-G4-BF NP161-36101-G4-BF 14X14 17X17 19X19 | |
WLGW2011BRW
Abstract: WEAP2011BRW WLGW2011BAK WEAP2011BAK projects based on mobile communication and networking APWE1120 wud2011bww WEAP2011BJP yagi antennas WLPI2000BWW
|
Original |
NP1690 0901/OC/PL/PP/5K WLGW2011BRW WEAP2011BRW WLGW2011BAK WEAP2011BAK projects based on mobile communication and networking APWE1120 wud2011bww WEAP2011BJP yagi antennas WLPI2000BWW | |
NP16N06YLLContextual Info: Data Sheet NP16N06YLL R07DS1124EJ0100 Rev.1.00 Oct 30, 2013 60 V – 16 A – N-channel Power MOS FET Application: Automotive Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance |
Original |
NP16N06YLL R07DS1124EJ0100 AEC-Q101 NP16N06YLL | |
NP160N055TUKContextual Info: Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
NP160N055TUK R07DS0592EJ0100 NP160N055TUK AEC-Q101 NP160N055TUK-E1-AY NP160N055TUK-E2-AY O-263-7pin MP-25ZT) | |
nP1609Contextual Info: 90370 NP1609 5/16/00 4:47 PM Page 1 Transactional LoadBalancing Systems Delivering true server availability 90370 NP1609 5/16/00 4:47 PM Page 2 Transactional Load-Balancing Systems: Delivering True Server Availability Contents Executive Summary 3 Moving Beyond Simple Availability Checking |
Original |
NP1609 0500/OC/LM/PP/10K nP1609 | |
Contextual Info: Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance |
Original |
NP160N04TUJ R07DS0021EJ0100 NP160N04TUJ AEC-Q101 O-263-7pin, | |
Contextual Info: A Table Of Contents ^Arrays Pages Pin Grid Arrays / Zero Insertion Force PG A/ZIF PG A/ZIF PG A/ZIF Open top PG A/ZIF (Interstitial) PGA / ZIF (Open Top, Interstitial) NP89 NP161 NP171 NP236 NP178 9-10 11-12 13-14 15-16 17-18 IC264 NP276 19 20-21 Ball Grid Arrays |
OCR Scan |
NP161 NP171 NP236 NP178 IC264 NP276 IC280 NP291 NP351 IC-176 |