NOV20 Search Results

Contextual Info: 7 8 6 5 3 4 1 2 REVISIONS REV ECN, ERN NO. DATE APPRD. B ECN E08315 NOV20/07 K.L. F F 4.50 .177 13.50 .531 22.40 .882 E E 10.00 .394 D D 7.35 .289 C C 16.00 .630 9.80 .386 NOTES: B 40.00 1.575 B 1. MATERIAL: CLEAR SILICONE RUBBER. 2. OPERATING TEMPERATURE: -40°C TO +150°C.

Contextual Info: Rev 3: Nov2004 AO4415, AO4415L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4415 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load

filotex-50 mfcfb

Abstract: 1-225349-1 225349-6
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST AJ 16 LTR DESCRIPTION M A A MAX 2. B MAX 3 SAFETY E Q U A LL Y MAX — EC PER 0 5 1 4 - 0 1 9 2 - 0 4 11 NOV2004 OWN

Contextual Info: TH I S DRAW I NG IS UNPUBLI S HE D. RELEASED BY C O P Y RI G HT 20 TYCO ELECTRONICS F OR CORPORATION. ALL PUBLICATION R 1G H T S 20 L OC RESERVED. D I ST PT R E V LTR I S I O N S DESCRIPTION DATE DWN APVD RELEASED R E V I S E D PER 0 G 3 B - 0 I 19- 01 12NOV2Û Û I

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION - , LOC ALL RIGHTS RESERVED. COPYRIGHT CM BY TYCO ELECTR0NIC5 CORPORATION. D IST REVISIONS 00 LTR DESCRIPTION DATE 0 7 —NOV—02 REVISED PER 0 G 3 B - 0 3 6 7 - 0 2 POST TO WITHSTAND 1 3 NEWTONS 3 L B S . MIN. AXIAL

STTH

Abstract: AV900
Contextual Info: STTH8L06 Turbo 2 ultrafast high voltage rectifier Features K • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ Package insulation voltage: – TO-220AC Ins: 2500 V rms – TO-220FPAC: 2000 V DC

KBP04G

Abstract: KBP10G
Contextual Info: LITE-ON SEMICONDUCTOR KBP04G thru KBP10G REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 1.5 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS KBP FEATURES Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic

GR-1089-CORE

Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB4000H
Contextual Info: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE VDRM IPP - 58 to 360 Volts - 100 Amperes FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400

L60ESDL2V8S8-4

Contextual Info: LITE-ON SEMICONDUCTOR L60ESDL2V8S8-4 STAND-OFF VOLTAGE - 2.8 Volts POWER DISSIPATION - 600 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOP-8 The L60ESDL2V8S8-4 of transient voltage suppressors are designed to protect low voltage. This has been specifically designed to protect

Contextual Info: LITE-ON SEMICONDUCTOR T16M25F800C TRIACS 16 AMPERES RMS 800 VOLTS Triacs Sillicon Bidirectional Thyristors TO-220FP FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage VDRM&VRRM to 800 V Isolation Voltage R.M.S. 1500V

R1U50-600A

Contextual Info: LITE-ON SEMICONDUCTOR R1U50-600A SCRs 1 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 Volts

4005L

Contextual Info: LITE-ON SEMICONDUCTOR KBJ4005L thru KBJ410L REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 4.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES KBJ Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic

KBDG

Contextual Info: LITE-ON SEMICONDUCTOR GBJ2504 thru GBJ2510 REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 25 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBJ FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.

a1208

Contextual Info: LTTH806LF REVERSE VOLTAGE – 600Volts FORWARD CURRENT – 8.0 Ampere HYPER-FAST GLASS PASSIVATED RECTIFIER FEATURES ITO-220AC • Soft, Hyper fast switching capability • Specially suited for critical mode Power Factor Corrections. • High reliability and efficiency

Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 15KP SERIES REVERSE VOLTAGE - 17 to 200 Volts POWER DISSIPATION - 15000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

15SQ045

Contextual Info: 15SQ045 SCHOTTKY BARRIER RECTIFIERS For PV Solar Cell Bypass Protection REVERSE VOLTAGE FORWARD CURRENT – 45 Volts – 15 Amperes FEATURES R6 • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency

Contextual Info: LITE-ON SEMICONDUCTOR SDC1A120 SERIES SIDACS 0.9 AMPERES RMS 120 thru 240 VOLTS Sidac High Voltage Sillicon Bidirectional Thyristors DO-41 FEATURES High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators Used to Trigger Gates of SCR's and Triacs

Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 3KP SERIES REVERSE VOLTAGE - 5.0 to 220 Volts POWER DISSIPATION - 3000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 5KP SERIES REVERSE VOLTAGE - 5.0 to 180 Volts POWER DISSIPATION - 5000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

Contextual Info: B320B thru B340B REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 3.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES • For surface mounted application SMB • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop

Contextual Info: LBR106 thru LBR110 LEADLESS SURFACE MOUNT BRIDGE RECTIFIER REVERSE VOLTAGE – 600 to 1000 Volts FORWARD CURRENT – 1.0 Ampere LBR FEATURES • Low profile package – 1.00mm • Low power loss & high efficiency • High current capability MECHANICAL DATA

Contextual Info: TH I S DRAW ING IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS FOR CORPORATION. ALL PUBLICATION R 1G H T S 20 LOC PT RESERVED. REV I S IONS D I ST LTR DESCRIPTION DATE DWN APVD RELEASED REVISED PER 0 G 3 B - 0 I 19-01 12 N O V 2 Û Û I

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 4 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST CM 00 LTR DESCRIPTION EC 0G3B 1011 DATE 19MAR05 04 DWN APVD BSV DPB T .180 ri-, ri-, ri-, + + + ri-, i .300+.01 5

3KP10

Abstract: 3KP10A 3KP11 3KP11A 3KP12 3KP12A 3KP13 3KP13A 3KP14
Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 3KP SERIES REVERSE VOLTAGE - 5.0 to 220 Volts POWER DISSIPATION - 3000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability