07NOV2001 Search Results
07NOV2001 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TH I S DRAW I NG IS UNPUBLI S HE D. RELEASED BY C O P Y RI G HT 20 TYCO ELECTRONICS F OR CORPORATION. ALL PUBLICATION R 1G H T S 20 L OC RESERVED. D I ST PT R E V LTR I S I O N S DESCRIPTION DATE DWN APVD RELEASED R E V I S E D PER 0 G 3 B - 0 I 19- 01 12NOV2Û Û I |
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12NOV2Û 94-VO, NOV20 07NOV2001 | |
Contextual Info: TH I S DRAW ING IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS FOR CORPORATION. ALL PUBLICATION R 1G H T S 20 LOC PT RESERVED. REV I S IONS D I ST LTR DESCRIPTION DATE DWN APVD RELEASED REVISED PER 0 G 3 B - 0 I 19-01 12 N O V 2 Û Û I |
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NOV20 07NOV2001 S-282893 | |
M48T129V
Abstract: M48T129Y
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M48T129Y M48T129V M48T129Y: M48T129V: M48T129V M48T129Y | |
Contextual Info: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V |
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M68AR024D TFBGA48 | |
AN1471
Abstract: M24XXX
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AN1471 M24xxx AN1471 | |
Contextual Info: M48Z128 M48Z128Y 5.0 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of |
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M48Z128 M48Z128Y M48Z128: M48Z128Y: PMDIP32 | |
Contextual Info: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V |
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M68AR024D TFBGA48 | |
M48T129Y
Abstract: STMicroelectronics
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M48T129Y M48T129V M48T129Y: M48T129V: STMicroelectronics | |
Contextual Info: M48Z128 M48Z128Y 5.0 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of |
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M48Z128 M48Z128Y M48Z128: M48Z128Y: | |
AN1471
Abstract: ic eeprom conclusion of can bus application in automotive n
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AN1471 M24xxx AN1471 ic eeprom conclusion of can bus application in automotive n | |
Contextual Info: M48T129Y M48T129V 5.0 or 3.3 V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded century, year, month, day, date, |
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M48T129Y M48T129V M48T129Y: M48T129V: | |
M68AR024D
Abstract: TFBGA48
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M68AR024D TFBGA48 M68AR024D TFBGA48 | |
E60677Contextual Info: TH I S DRAW ING IS UNPUBLI S H E D . RELEASED BY C OP Y R I G H T 2 0 TYCO ELECTRONICS CORPORATION F OR ALL 20 P U B L I C A T I ON R I GHTS L OC RESERVED. REV I S I O N S D I ST FT DESCRIPTION C5 M A T E R I A L S AND F I N I S H H O U S I N G : PA 6 - 6 , UL 9 4 - V O , COLOR - SEE T A B L E . |
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94-VO, E60677. 07NOV200 I6FEB20I0 3IMAR2000 E60677 | |
AN1471
Abstract: ic eeprom
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AN1471 M24xxx AN1471 ic eeprom | |
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