NOV07 Search Results

Contextual Info: Sch em atic: a a TX e o 7 o 2 o RX 3 0 1 o 10 o 1OOQpF T 11 O 2KV 12 o R1.R2.R3.R4: 75 ±1% OHMS E lectrical Specifications: @25“C Isolation Voltage: 1500 Vac Isolation Voltage: 500 Vac 1 + 2 + 4—3-1-7-I-6 UTP SIDE OCL: 350uH Min @100KHz 10OmV 8mADC

Contextual Info: 1. D im e n s io n s: 3. E le c t r i c a l S p e c i f i c a t i o n s : @25°C Pri/Sec Isolation: 1500 Vrms 1.10 Typ Insulation Resistance: 10,000 Mohms —1 O K} X CNI^ o v . ^ 0 03 4 -I o 00 CO _4_ ÎIÏÏÎÎÏÏÎ1 Leakage Inductance: 0.30uH Max @RCV SEC Shorted

Contextual Info: TH I R D ANGLE PROJ . REV ISIONS - $> NOTES: I M A T E R I A L S OF C O N S T R U C T I O N : BODY - BRASS, GOLD PLATING C O N T A C T PIN - B E R Y L L I U M C O P P E R , G O L D P L A T I N G I N SULATO R - PTFE ELECTRICAL: A. I M P E D A N C E : 50 O H M

Contextual Info: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns

BAT70

Abstract: BAT70-05
Contextual Info: BAT70. Silicon Schottky Diode
Power rectifier diode
Parallel connection for maximum I F per package
Low forward voltage drop
For power supply
For clamping and protection BAT70-05 4 D 1 1 2 D 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BB639C/BB659C. Silicon Variable Capacitance Diode
For tuning of extended frequency band in VHF TV / VTR tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to "in-line" matching assembly procedure

SCD80

Abstract: CT 0.4-P
Contextual Info: BB535 /BB555. Silicon Tuning Diode
For UHF-TV-tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to "in-line" matching assembly procedure BB535 BB555/-02V 1 2 Type BB535 BB555 BB555-02V

b135

Abstract: b13502
Contextual Info: B13502GP N THRU B13506GP(N) Glass Passivated Auto Rectifier YENYO Voltage Range 200 to 600 V Current 35 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ High reliability ¬ High surge current capability BLOCK .406(10.3) .382(9.7)

Contextual Info: BB831. Silicon Variable Capacitance Diodes
Frequency range up to 2 GHz
Special design for use in TV-sat indoor unit BB831 1 2 Type BB831 Package SOD323 Configuration single LS nH Marking 1.8 white T Maximum Ratings at TA = 25°C, unless otherwise specified

VARIABLE CAPACITANCE DIODE

Abstract: BB439
Contextual Info: BB439. Silicon Variable Capacitance Diode
For VHF tuned circuit applications
High figure of merit BB439 1 2 Type BB439 Package SOD323 Configuration single LS nH Marking 1.8 white 2 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

LED 850nm

Abstract: bidirectional LED transmitter 850nm optical led ST LED 850nm 60mA
Contextual Info: P/N: C-13/08-001-B-NSTL-01-XX 1310nm Emitting LED , 850nm Receiving (PIN), Bi-directional Diplexer Module 4 Features l 1310nm LED for transmitter side and 850nm PIN photodiode for receiver side l Uncool l Integrated package with low optical and electrical crosstalk

crystal 16MHZ

Abstract: AK8126
Contextual Info: ASAHI KASEI EMD CORPORATION Spread Spectrum Clock Generator AK8126 Description Features The AK8126 is a spread spectrum clock generator designed for Home AV applications where EMI elimination is seriously required. The device uses the AKEMD’s original spread spectrum profile* to

BB804

Contextual Info: BB804. Silicon Variable Capacitance Diode
For FM tuners
Monolithic chip with common cathode for perfect tracking of both diodes
Uniform "square law" characteristics
Ideal HiFi tuning device when used in low-distortion, back-to-back configuration

BAT60B

Contextual Info: BAT60B. Silicon Schottky Diode
High current rectifier Schottky diode with very low V F drop typ. 0.24 V at I F = 10mA
For power supply applications
For clamping and protection in low voltage applications
For detection and step-up-conversion BAT60B

P4C148

Abstract: P4C149
Contextual Info: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns

Contextual Info: BB545 /BB565. Silicon Variable Capcitance Diode
For UHF-TV-tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to "in-line" matching assembly procedure BB545 BB565/-02V 1 2 Type BB545

marking 08

Abstract: marking code INFINEON
Contextual Info: BB833. Silicon Tuning Diodes
Extended frequency range up to 2.5 GHz; spezial design for use in TV-sat indoor units
High capacitance ratio BB833 1 2 Type BB833 Package SOD323 Configuration single LS nH Marking 1.8 white X Maximum Ratings at TA = 25°C, unless otherwise specified

BB844

Contextual Info: BB844 Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band 77MHz to 108MHz
Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning
High tuning ratio at low supply voltage car radio

BB844

Contextual Info: BB844 Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band 77MHz to 108MHz
Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning
High tuning ratio at low supply voltage car radio

Contextual Info: ASAHI KASEI EMD CORPORATION Spread Spectrum Clock Generator AK 8 1 2 6 Features Output Frequency Range: 16MHz – 128MHz Configurable Spread Spectrum Modulation: - AKEMD’s Original Spread Spectrum Profile - Modulation Ratio: Center Spread: ± 0 . 2 5 % , ± 0 . 5 % , ± 1 . 0 % , ± 1 .5 %

SCD80

Abstract: marking code INFINEON INFINEON marking marking code diode 04 BAR63-02V BB639C BB659C BB659C-02V marking code of 0 to Z DIODE Q marking
Contextual Info: BB639C/BB659C. Silicon Variable Capacitance Diode
For tuning of extended frequency band in VHF TV / VTR tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to "in-line" matching assembly procedure

FL500

Abstract: LDTC0520 20 watt laser diode FL591 driver for 7 watt laser diode
Contextual Info: 500 mA laser diode driver or two 250 mA drivers in a small SMT package that is reflow oven compatible Pb Compliant FL500 RoHS GENERAL DESCRIPTION: The FL500 is ideal for driving low power laser diodes. It operates from 3 to 12 V, so is compatible with Li+ battery operation. It can be

13001b

Abstract: 13001 application notes w 13001 LED 850nm LED 1310nm fiber coupled LED 850nm
Contextual Info: P/N: C-08/13-001-B-NSTL-01-XX 850nm Emitting LED , 1310nm Receiving (PIN), Bi-directional Diplexer Module 4 Features l 850nm LED for transmitter side and 1310nm PIN photodiode for receiver side l Uncool l Integrated package with low optical and electrical crosstalk

108MHz

Abstract: BB844
Contextual Info: BB844 Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band 77MHz to 108MHz
Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning
High tuning ratio at low supply voltage car radio