NOTE21 Search Results

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small

NDS8435

Contextual Info: & N a t io nal Semiconductor" M ay 19 96 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

HX8257

Abstract: hx8257 serial CIE1931 IEC60068-2-1 IEC60068-2-14 IEC60068-2-2 IEC60068-2-3 Tianma TS047NAARB01-00 Touch screen tianma
Contextual Info: SHANGHAI TIANMA MICRO-ELECTRONICS TS047NAARB01-00 Coversheet MODEL NO. : ISSUED DATE: VERSION : TS047NAARB01-00 2008-03-24 Ver 1.0 •Preliminary Specification □Final Product Specification Customer : Approved by SHANGHAI TIANMA Confirmed : prepared by Notes

M5M5V5636GP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: National Semiconductor” May 1996 NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement m ode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology.

M5M5V5636GP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

crystal quartz 24mhz

Abstract: 4 GANG variable capacitor Specification Quartz Crystals 12Mhz MRC 058
Contextual Info: Ordering number : ENA1035 LC87F5N62B CMOS IC FROM 66K byte, RAM 2048 byte on-chip 8-bit 1-chip Microcontroller Overview The SANYO LC87F5N62B is an 8-bit microcomputer that, centered around a CPU running at a minimum bus cycle time of 83.3ns, integrate on a single chip a number of hardware features such as 66K-byte flash ROM onboard rewritable ,

M5M5T5672TG-20

Abstract: a01-824
Contextual Info: Renesas LSIs M5M5T5672TG – 20 Preliminary Notice: This is not final specification. Some parametric limits are subject to change. 18874368-BIT 262144-WORD BY 72-BIT NETWORK SRAM DESCRIPTION The M5M5T5672TG is a family of 18M bit synchronous SRAMs organized as 262144-words by 72-bit. It is designed to eliminate

Contextual Info: MITSUBISHI LSIs M5M44102AWJ, J,L,TP,RT-6,-7,-8,-10 STATIC COLUMN MODE 4 1 9 4 3 0 4 -B IT 4 1 9 4 3 0 4 -W 0 R D BY 1-BIT DYNAMIC RAM DESCRIPTION This is a fa m ily of 4194304-word by 1-bit dynam ic RAMS, fabricated w ith the high performance CMOS process, and

MH16M40AJD-6

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some of contents are subject to change without notice. MH16M40AJD -6 Proto-2 FAST PAGE MODE 16,777,216-WORD BY 40-BIT DYNAMIC RAM PIN CONFIGURATION ( TOP VIEW ) DESCRIPTION The MH16M40AJD is a 16M word by 40-bit dynamic

LC87F5NC8A

Abstract: A0929
Contextual Info: Ordering number : ENA0929 LC87F5NC8A CMOS IC FROM 128K byte, RAM 4096 byte on-chip 8-bit 1-chip Microcontroller Overview The SANYO LC87F5NC8A is an 8-bit microcomputer that, centered around a CPU running at a minimum bus cycle time of 83.3ns, integrate on a single chip a number of hardware features such as 128K-byte flash ROM onboard

MH32V725BST

Abstract: MH32V725BST-5 MH32V725BST-6 1366W
Contextual Info: MITSUBISHI LSIs Preliminary Spec. MH32V725BST -5, -6 HYPER PAGE MODE 2415919104 - BIT 33554432 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH32V725BST is 33554432-word x 72-bit dynamic ram stacked structural module. This consist of thirty-six

M5M4V17405

Abstract: MH16V6445BWJ-5 MH16V6445BWJ-6
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH16V6445BWJ -5, -6 HYPER PAGE MODE 1073741824 - BIT 16777216 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V6445BWJ is 16777216-word x 64-bit dynamic

M5M4V17805

Abstract: 2097152-BIT
Contextual Info: Preliminary Spec. MITSUBISHI LSIs MH2V725CZTJ-6,-7 Some of contents are subject to change without notice. HYPER PAGE MODE 150994944-BIT 2097152-BIT BY 72-BIT DINAMIC RAM PIN CONFIGURATION DESCRIPTION The MH2V725CZTJ is 2097152-word x 72-bit dynamic ram module.

M5M411665ATP3

Abstract: M5M411665AJ M5M411665A ATP3 M5M411665ATP2 M5M4116
Contextual Info: MITSUBISHI LSIs Preliminary Spec. M5M411665AJ/ATP2/ATP3-5,-6,-7,-5S,-6S,-7S Rev. 1.2 HYPER PAGE MODE 1,048,576-BIT(65,536-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION FEATURES CAS Address OE access access access time time time (max.ns) (max.ns) (max.ns) Cycle

mitsubishi assembly year

Contextual Info: MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH16V7245AWJ -5, -6 HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V7245AWJ is 16777216-word x 72-bit dynamic

Contextual Info: MITSUBISHI LSIs Preliminary Spec. MH32V725AJ -5, -6 HYPER PAGE MODE 2415919104 - BIT 33554432 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH32V725AJ is 33554432-word x 72-bit dynamic ram module. This consist of thirty-six industry standard

M5M465805ATP

Contextual Info: MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V7245AZTJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245AZTJ is 8388608-word x 72-bit dynamic

M5M4V18165CJ

Abstract: MITSUBISHI date code mitsubishi date year M5M4V18165C mitsubishi assembly year mitsubishi Manufacturing year mitsubishi year code 1048576bit DRAM
Contextual Info: MITSUBISHI LSIs Preliminary Spec. MH1V645CWXPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some of contents are subject to change without notice. MH4V7245CWJ-6,-7 HYPER PAGE MODE 301989888-BIT 4194304-BIT BY 72-BIT DYNAMIC RAM PIN CONFIGURATION DESCRIPTION The MH4V7245CWJ is 4194304-word x 72-bit dynamic ram module.

2097152-BIT

Contextual Info: Preliminary Spec. MITSUBISHI LSIs MH2V72CZJ-6,-7 Some of contents are subject to change without notice. FAST PAGE MODE 150994944-BIT 2097152-BIT BY 72-BIT DINAMIC RAM PIN CONFIGURATION DESCRIPTION The MH2V72CZJ is 2097152-word x 72-bit dynamic ram module.

mitsubishi assembly year

Abstract: mitsubishi year code
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH4V645AWXJ -5, -6 HYPER PAGE MODE 268435456 - BIT 4194304 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION The MH4V645AWXJ is 4194304-word x 64-bit dynamic ram module. This consist of four industry standard 4M x

rd 70 vhr1

Abstract: opamp 356 128/128 lcd graphic display connections ricon COM128 T6K41 ricon 372
Contextual Info: T6K41 Preliminary TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic T6K41 Column Row Driver LSI for Dot Matrix Graphic LCD The Toshiba T6K41 is a driver for a small-to-medium-sized dot matrix graphic LCD, and is especially suited to four-gray-scale

whpc

Abstract: t8140
Contextual Info: M ITSUBISHI LSIs MHlM09B2J-7,-8,-10/ MH 1M09B2JA-7, -8,-10 S T A T IC C O L U M N M O D E 1 0 4 8 5 7 6 - W 0 R D B Y 9 -B IT D Y N A M IC R A M DESCRIPTIO N PIN C O N F IG U R A T IO N {TOP V IE W The M H 1M 09B 2 J, JA is 1 0 4 8 5 7 6 word x 9 bit dynamic