NORMAL DIODE 1N Search Results

1N4756A

Abstract: diode iz zener silcon diode
Contextual Info: SEMICONDUCTOR 1N4756A TECHNICAL DATA ZENER DIODE SILCON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES Normal Voltage Tolerance about 5% B C DIM MILLIMETERS A 4.2~5.2 B MIN 25.4 2.0~2.7 C 0.71~0.86 D A B D MAXIMUM RATING Ta=25 CHARACTERISTIC

1N3292

Abstract: 1N3293 2000C
Contextual Info: 1N3288-1N3297 NAINA SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF Maximum Average Forward Current Te=1250C Maximum peak forward

ph 41 zener diode

Contextual Info: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T ~ O T > - n IN3379-IN3883 s e r i e s Fast Recovery Rectifier 6 Amp Silicon Diode FEATURES METAL D04 ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity

SM12CXC170

Contextual Info: Ordering Stud base diodes are available in both Normal base cathode and Reverse (base anode) polarity. Use N or R respectively in code according to polarity required, e g. N013 - normal polarity, R013 reverse polarity: (1N3899 - normal, 1N38S9R - reverse).

L6574

Abstract: L6574D 200 Amp bridge mosfet 12v cfl ballast D97IN492 st l6574 ignition mosfet Ballast driver L6574
Contextual Info: L6574  CFL/TL BALLAST DRIVER PREHEAT AND DIMMING HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT UNDER VOLTAGE LOCK OUT

Voltage to Current Converters

Abstract: L6574 L6574D L6574 application zvs driver
Contextual Info: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING PRODUCT PREVIEW HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT

L6574D

Abstract: L6574 Voltage to Current Converters Ballast driver L6574 CFL DC 12V
Contextual Info: L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIMMING PRODUCT PREVIEW HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ± 50 V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mMA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH 1nF LOAD CMOS SHUT DOWN INPUT

1N4148 diode

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

1n60b

Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

mosfet 1N60

Abstract: 1n60 1N60 TO92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 1N4150 HIGH SPEED SILICON SWITCHING DIODE DO-35 Glass Axial Package FEATURES General Purpose used in Computer and Industrial Applications o ABSOLUTE MAXIMUM RATINGS Ta=25 C unless specified otherwise

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2A 600V N-CHANNEL MOSFET 1 FEATURES TO- 251 * Typical RDS ON =9.3Ω@VGS = 10V. * Avalanche rugged technology * Low gate charge (typical 5.0nC) * Low Crss (typical 3.0 pF) * 100% avalanche tested * Excellent switching characteristics

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer HIGH SPEED SILICON SWITCHING DIODE 1N4150 500mW DO- 35 Glass Axial Package FEATURES The zeners with glass passivated junction in the hermetically sealed glass package with

MAX3263

Abstract: MAX3263CAG
Contextual Info: 19-0432; Rev 1b; 4/98 Single +5V, Fully Integrated, 155Mbps Laser Diode Driver _Features ♦ Rise Times Less than 1ns The MAX3263’s fully integrated feature set includes a TTL-compatible laser failure indicator and a programmable slow-start circuit to prevent laser damage. The

MAX3263

Abstract: MAX3263CAG
Contextual Info: 19-0432; Rev 1; 4/98 Single +5V, Fully Integrated, 155Mbps Laser Diode Driver _Features ♦ Rise Times Less than 1ns The MAX3263’s fully integrated feature set includes a TTL-compatible laser failure indicator and a programmable slow-start circuit to prevent laser damage. The

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

1n60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: Diodes SMD Type Glass Passivated Junction Silicon Zener Diode 1N5918B DO-41 • Features ● Built-in strain relief ● Low inductance 1.0 25.4 MIN. ● High Stability 0.107 (2.7) 0.080 (2.0) DIA. ● 1.5W Power Dissipation 0.205 (5.2) 0.160 (4.1) 1.0 (25.4)

Contextual Info: Diodes SMD Type Glass Passivated Junction Silicon Zener Diode 27 1N592 7B DO-41 • Features ● Built-in strain relief ● Low inductance 1.0 25.4 MIN. ● High Stability 0.107 (2.7) 0.080 (2.0) DIA. ● 1.5W Power Dissipation 0.205 (5.2) 0.160 (4.1) 1.0 (25.4)

Contextual Info: ^mi-Conductor ^PioduaU, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Package 1N4829 PACKAGE DIMENSIONS Stabistor Diode DO-35 Absolute Maximum Ratings Power Dissipation Reverse Voltage Symbol