NMOS STATIC RAM Search Results

4096 bit static RAM

Abstract: NMC6132
Contextual Info: NMC6132 E g National d u i Semiconductor NMOS RAMs PREVIEW NMC6132 32k Pseudo-Static NMOS RAM General Description Features The NMC6132 is a single 5V power supply pseudo-static NMOS RAM organized ^s'4096 words byffBiTSrJhecircuit uses single-transistor dyriamie storage CelTs with internal

D2167

Abstract: D2167-3 PD2167 UPD2167
Contextual Info: . W I s C NEC Electronics p.PD2167 16,384x i - b i t STATIC NMOS RAM Truth Table Description The /U.PD2167 is a 16,384-word by 1-bit static MOS RAM. Using a scaled-NMOS technology, its design provides the easy-to-use features associated with nonclocked static

pD2167

Abstract: UPD2167
Contextual Info: NEC NEC Electronics is . ^ xT bI t STATIC NMOS RAM D escription The /¿PD2167 is a 16,384-word by 1-bit static M OS RAM. Using a scaled-NMOS technology, its design provides the easy-to-use features associated with nonclocked static memories. The ptPD2167 has a three-state output and otters a

upd2149

Contextual Info: NEC ¿ PD2149 1,024 X 4-Bit STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The //PD2149 is a 4096-bit static Random Access Memory organized as 1024 words by 4 bits. Using a scaled NMOS technology, it incorporates an innovative

D4016 RAM

Abstract: D4016C CD 4016 PIN DIAGRAM nec d4016 D4016 D4016-2 RAM pd4016 4016 static ram 4016 RAM D4016C RAM
Contextual Info: NEC NEC Electronics Inc. |jiPD4016 2,048 X 8-BIT STATIC NMOS RAM Revision 3 Description Pin Configuration The |jlPD4016 is a 16,384-bit static Random-access Memory device organized as 2,048 words by 8 bits. Using a scaled NMOS technology, its design provides the ease-of-use fea­

SAB 8051 p

Abstract: semiconductor smd ad 5.9 p35 SMD 6 PIN IC
Contextual Info: SIEMENS 256 x 8-Bit Static CMOS RAM NMOS-Compatibie SAE 81C52 Preliminary DataCMOS IC P Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051

a5 gnd

Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns

NTE2102

Abstract: NTE210
Contextual Info: NTE2102 Integrated Circuit NMOS, 1K Static RAM SRAM , 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage

81c52

Abstract: P-DIP-16-1 interfacing of RAM with 8086 SAB8086 dip-16-1 SAB 8051 p SAB 8051 pin diagram of ic 8086 8086 logic diagram 8086 microprocessor max mode operation
Contextual Info: SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible Preliminary DataCMOS IC PFeatures ● ● ● ● ● ● ● ● 256 x 8-bit organization Standby mode Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051

81C52P

Abstract: SAB 8051 p 8051 memory organization SAE81C52 IEP00829 SAE j
Contextual Info: SIEMENS SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051 • Very low power dissipation

81C52P

Abstract: SAB 8051 p 81C52-P SAB 8086
Contextual Info: SIEMENS SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatibte Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051 • Very low power dissipation

Contextual Info: tiGE D 023SbD5 0QS0?bti 213 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible CMOS IC Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families

transistor A7

Abstract: HM5116100 HM534251B HM538123B HM62256 HM658512A low vce transistor hitachi eprom Hitachi DSA00503 Hitachi HM62256
Contextual Info: Application 1. Static RAM 1.1 Static RAM Memory Cell A memory cell used in Hitachi static RAM consists of 4 NMOS transistors and 2 load resistors as shown in Figure 1-1. The data in the cell can be retained as long as power is supplied, and read out without being

ac 1501-50

Abstract: DA10 IM7141 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10
Contextual Info: IM 7141M 4 0 9 6 Bit 4 0 9 6 x 1 NMOS Static RAM DßffifPIDIL DESCRIPTION FEATURES The IM7141 is a 4096-bit static Random Access Memory organized 4096 words x 1 bit. The storage cells and decode and control circuitry are com pletely static; no clocks or refresh

Contextual Info: NEC MPD4104 MPD4104-1 MPD4104-2 NEC Electronics US.A. Inc. Microcomputer Division 4096 X 1 STATIC NMOS RAM D E S C R IP T IO N The ¿¿PD4104 is a high performance 4K static RAM . Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve

80c86 intel

Abstract: 8405201Qa hm6616 ss 6616 I80C86-2 80c86-2 intel MD80C86 hm-6616 ic smd code AD9 Intel 80c86
Contextual Info: 80C86 TM CMOS 16-Bit Microprocessor March 1997 Features Description • Compatible with NMOS 8086 • Completely Static CMOS Design - DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5MHz 80C86 - DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8MHz (80C86-2)

Contextual Info: 256x8 Bit Static CMOS RAM NMOS-Compatible SAE81C52 Preliminary Data Type 0S A E 81C 52P 0S A E 81C 52G CMOS IC Ordering Code Package Q67100-H8003 Q67100-H8004 P-DIP-16 P-DSO-20 SMD The SAE 81C52 is a CMOS silicon gate, static random access memory (RAM), organized

MB8128-15

Abstract: MB8128-10 MB8128 8128-10 MBM2716 mb8128-15 cross MB6128-15
Contextual Info: MB8128-10 MB8128-15 FU JITSU MICROELECTRONICS. INC. NMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The MB8128 is fabricated using N-channel silicon gate MOS tech­ nology. It uses fully static cir­ cuitry throughout and therefore requires no clocks or refreshing

UPD2147

Abstract: 2147 memory ic
Contextual Info: NEC |xPD2147A 4 ,0 9 6 x 1 -BIT STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The [J.PD2147A is a 4096-bit static Random Access Memory organized as 4096 words by 1 bit, using a scaled MOS tech­ nology. It uses a uniquely innovative design approach which

6116 RAM

Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
Contextual Info: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS

hm-6616

Abstract: smd T3 BH 80c86 intel ss 6616 intel 82c84 clock generator 80c86-2 intel HM6616 marking code JG SMD SMD MARKING CODE AD0 smd diode S7
Contextual Info: 80C86 TM CMOS 16-Bit Microprocessor August 22, 2006 Features Description • Compatible with NMOS 8086 • Completely Static CMOS Design - DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8MHz 80C86-2 • Low Power Operation - lCCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 A Max

SCM21C14

Abstract: 2114 ram 2114AL-4 ram 2114 2114 static ram 2114 2114 static ram memory memory 2114 STATIC RAM 2114 SCM2114ALM
Contextual Info: SCM2114AL SOLID ^ STATE <§P SCIENTIFIC 1024 x 4 Static CMOS RAM Preliminary Pin Configuration Features i Fast Access Time Selection: 100ns/120ns/150ns/200ns i Direct Replacement for NMOS 2114 RAMs I 883 Qualified Version: 883/2114ALM i Three-State Outputs

MB81C84A-35

Abstract: MB81C84 mb81c84a
Contextual Info: May 1990 Edition 1.0 FUjflSU DATA SHEET MB81C84A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 64K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB81C84A is a 65,536 words x 4 bits static random access memory fabricated with CMOS silicon gate process technology. The MB81C84A uses NMOS

NMC4864

Contextual Info: , PREVIEW NMC4864 64k Pseudo-Static Byte-Wide RAM NMC4864 NMOSRAMs National Semiconductor Features General Description • The NMC4864 is a single 5V power supply pseudo-static NMOS RAM organized a?;8l92w ords by S ijrtS jT h e c irc u it ■ uses singie -tra nslstor dynam ic sto ra g e 'ce lls w ith inte r­