NKL CAPACITOR Search Results

Contextual Info: - H233 ALUMINIUM ELECTROLYTIC CAPACITORS N SERIES STANDARD ALUMINIUM ELECTROLYTIC CAPACITORS FOR GENERAL PURPOSE 'kl nkl mkl SPECIFICATIONS Characteristics Item Rated working voltage 6.3 ~ 100 V Operating temperature range -4 0 ~ +85°C Leakage current at 20°C, 120Hz)

nkl capacitor

Contextual Info: ALUMINIUM ELECTROLYTIC CAPACITORS GENERAL INFORMATION AND PRECAUTIONS IN USING ELECTROLYTIC CAPACITORS 1. D.C. electrolytic capacitors are polarized. If the unit is connected with polarities reversed, it would lead to short circuit and further result in an explosion if the unit is kept energized. NKL

Contextual Info: LM3017 www.ti.com SNOSC66 – MARCH 2012 LM3017 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES 1 • • • • • • • Fully compliant to Thunderbolt Technology specifications True shutdown for short circuit protection

nkl capacitor

Abstract: 12V 10A voltage regulators GRM31CR61E226KE15L 1262-25
Contextual Info: LM3017 www.ti.com SNOSC66 – MARCH 2012 LM3017 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES 1 • • • • • • • Fully compliant to Thunderbolt Technology specifications True shutdown for short circuit protection

Contextual Info: LM3017 www.ti.com SNOSC66C – MARCH 2012 – REVISED MARCH 2013 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES KEY SPECIFICATION • • • • 1 2 • • • • • • • • • • Fully Compliant to Thunderbolt Technology

Contextual Info: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is a 5 12k X 64

1262-25

Contextual Info: LM3017 www.ti.com SNOSC66 – MARCH 2012 LM3017 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES 1 • • • • • • • Fully compliant to Thunderbolt Technology specifications True shutdown for short circuit protection

Contextual Info: HB526A164DB Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-606 Z Preliminary - Rev. 0.0 Jun. 18, 1996 Description The HB526A164DB is a 512k X 64 X 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit SDRAM (HM5216165TT) sealed in TSOP

HBS26C264EN/HBS26C464EN

Contextual Info: HB526C264EN Series, HB526C464EN Series 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-629 Z Preliminary Rev. 0.0 Aug. 20, 1996 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

Contextual Info: HB526R464DBK-10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674 Z Rev. 0.0 Oct. 17, 1996 Description The HB526R464DBK is a 1Mbyte X 64 X 4 bank synchronous dynamic RAM small outline dual in-line memory module (SODIMM), mounted as eight pieces of 16-Mbit SDRAM (HM5216805TB) sealed in a

nkl capacitor

Contextual Info: @SPT SIGNAL PROCESSING TECHNOLOGIES SPTS1 4 0 8-BIT, ULTRAHIGH SPEED D/A CONVERTER FEATURES APPLICATIONS • 400 MWPS Nominal Conversion Rate • RS-343-A Compatible • Complete Video Controls: Sync, Blank, Bright and Reference White Force High • 10 KH, 100K ECL Compatible

T211T

Abstract: nkl capacitor
Contextual Info: -'MYUH DAI -• HY57V651620A 4 Banks x 1M x 16 B it Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, HY57V651620A is organized as 4banks ot

Contextual Info: H B 5 2 6 R 4 6 4 D B K - 1 0 /1 2 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674 Z Rev. 0.0 Oct. 17, 1996 Description The HB526R464DBK is a 1Mbyte x 64 x 4 bank synchronous dynamic RAM small outline dual in-line memory module (SODIMM), mounted as eight pieces of 16-Mbit SDRAM (HM5216805TB) sealed in a

Contextual Info: HB526A264EN-10/12 1,048,576-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-485B (Z) Rev. 2.0 Apr. 29, 1996 Description The HB526A264EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB526A264EN-10/12 1,048,576-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-485B (Z) Rev. 2.0 Apr. 29, 1996 Description The HB526A264EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

HB526A164EN

Contextual Info: H B 5 2 6 A 1 6 4 E N -1 0 /1 2 524,288-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-592 (Z) Preliminary Rev. 0.0 May 16, 1996 Description The HB526A164EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB526A164EN-10/12 524,288-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-592 (Z) Preliminary - Rev. 0.0 May 16, 1996 Description The HB526A164EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB526A464EN-10/12 1,048,576-word x 64-bit x 4 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-536B (Z) Rev. 2.0 Apr. 29, 1996 Description The HB526A464EN belongs to 8 Byte DIMM (Dual In-line M emory M odule) family, and has been

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

Nippon capacitors

Contextual Info: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671C (Z) Rev. 3.0 Jul. 25, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is

p77k

Abstract: ZTE circuit board 1A11BS
Contextual Info: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671A (Z) Rev. 1.1 Feb. 20, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is

Contextual Info: HB526R464DBK-10H/10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674A Z Rev. 1.0 Jun. 3, 1997 Description The HB526R464DBK is a lM x 64 x 4 banks Synchronous Dynamic RAM Small Outline Dual in-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit SDRAM (HM5216805) sealed in TCP

C101A-1

Abstract: Nippon capacitors
Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737B Z Rev. 2.0 Mar. 14, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

Contextual Info: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671C (Z) Rev. 3.0 Jul. 25, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is