NJD6513
Abstract: NJD6514 6512 6513 6514 TRANSISTOR darlington array mp 6514 5-30V NJD6511 NJD6512
Contextual Info: NPN TRA NS IST O R ARRAY NJM6511, 6512, 6513, 6514 The seven high breakdown voltage NPN Darlington-connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers. Their internal suppression diodes insure freedom from problems associated with inductive
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njm65500manjd6511njd6512+11njd6513njd6514300ma200ma250ma651265136514 transistordarlington arraymp 65145-30v
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NJD6506S
Abstract: NJM6506 NJD65Q6 6506 NJD6507S NJD650SS
Contextual Info: NPN TRANSISTOR ARRAY NJM6506/6507 The NJD65Q6 and NJD6507 each consist of four general purpose silicon NPN transistors on common emitter. The NJD 6506 contains resistors for input bias. • Absolute Maximum Ratings Ta=25°C (6506) (6507) (6507) (6507) Collector to Emitter Voltage
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njm6506/6507njd65q6njd6507500mw+9njd6506snjd6s07s400ilnjd650610/ianjm65066506njd6507snjd650ss
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NJD6513
Abstract: NJD6512 NJD6514 NJ*6513 transistor 6512 5-30V DDG471S NJD6511 NJM6511 6513 TRANSISTOR
Contextual Info: NPN TR A N S IS T O R ARRAY NJM6511,6512,6513,6514 T he seven high breakdow n voltage N PN D arlington-connected transistors in these arrays are well suited for driving lam ps, relays, o r printer ham m ers. T heir internal suppression diodes insure freedom from problem s associated with inductive
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njm6511500manjd6511njd6512+9njd6513njd6514350ma500/nanj*6513transistor 65125-30vddg471s6513 transistor
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NJM6506
Abstract: NJD6507S NJQ6506S 6507 NJD65Q6
Contextual Info: Dwc3 NPN TRANSISTOR ARRAY NJM6506/6507 T he NJD65Q6 and NJD6507 each consist of four general purpose silicon NPN transistors on com m on em itter. The N JD 6506 contains resistors for input bias. • Package Outline ■ Absolute Maximum Ratings Ta= 2 5 °C
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