NJL81 Search Results

Contextual Info: NJL81H/81V/82H/83H/84H000 MEMO [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages

laser diode for rw drive

Abstract: NJL8130R I-V amplifier
Contextual Info: NJL8130R rev3.0 TENTATIVE Photo IC for LASER power monitor • GENERAL DESCRIPTION NJL8130R is Photo IC for Laser power monitor of CD-R/RW and Combination drive. NJL8130R consists of high speed PIN photo diode and high-speed I-V amplifier. NJL8130R is adopted compact and

650nm laser diode highspeed

Abstract: NJL8131R I-V amplifier
Contextual Info: NJL8131R rev1.0 TENTATIVE Photo IC for LASER power monitor • GENERAL DESCRIPTION NJL8131R is Photo IC for Laser power monitor of CD-R/RW and Combination drive. NJL8131R consists of high speed PIN photo diode and high-speed I-V amplifier. NJL8131R is adopted compact and

Contextual Info: NJL81H/81V/82H/83H/84H000 MEMO ＜注意事項＞ このデータブックの掲載内容の正確さには 万全を期しておりますが掲載内容について 何らかの法的な保証を行うものではありませ ん。とくに応用回路については、製品の代表

Contextual Info: NJL81H/81V/82H/83H/84H000A MEMO ＜注意事項＞ このデータブックの掲載内容の正確さには 万全を期しておりますが掲載内容について 何らかの法的な保証を行うものではありませ ん。とくに応用回路については、製品の代表

diode 82H

Contextual Info: NJL81H/81V/82H/83H/84H000A MEMO [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages

NJL811B

Abstract: NJL721B
Contextual Info: INFRARED EMITTER NJL1103B New JR C NJL1103B is a highly efficient infrared em itter with a glass-lens which features narrow beam angle high radiant intensity and fast response time. in connection with NJL6J1B, NJL612B, NJL721B, NJL7260B and NJL811B, this device is suitable for use in applications

transistor 335

Abstract: transistor IR TRANSISTOR ir receiver transistor 330 transistor NJL5171K INFRARED REMOTE CONTROL njl51
Contextual Info: OPTOELECTRONICS SEMICONDUCTOR ELEMENTS D [Photo R eflector] — Super Mini Type Transistor Output- [— N JL516 1 K /6 3 K /6 5 K /6 7 K . 2-10 NJ L 5 1 9 1 K /9 3 K /9 5 K . 2-63 Super Mini Type Transistor Output_

KAD7001

Abstract: SBX1610-52 sony SBX1610-52 LA2785 UPC177C ST L7805CV NJM79L05A SBX1810-52 sbx1610 MC34063P1
Contextual Info: 12/11/02 NJR Corporation Cross Reference Guide Sorted by Part Number Winter 2003 Competing Part Number AD66761 AN1311 AN1311S AN1319 AN1319S AN1339 AN1339NS AN1393 AN1393NS AN1432 AN1458 AN1458S AN311 AN311S AN6572 AN7810 AN78L06 AN78L08 AN78L09 AN78L18 AN78L20

m1305 transistor

Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Contextual Info: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082

TRansistor A 940

Abstract: NJL5125D NJL1110B NJL1104B NJL1112B NJL1120B NJL1120F NJL1121F NJL5126D NJL112IB
Contextual Info: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE NJL1104B NJL1110B NJL1112B NJL1120B NJL1121B NJL1122B NJL1120F NJL1121F DESCRIPTION PD [mW] 150 150 225 170 170 170 170 170 GaAs Infrared LED GaAlAs Infrared LED wmmW&mmmm IF H I VR m Xp [nm] 100 100

sony SBX1610-52

Abstract: SBX1610-52 PCF8544 msm58371 SFH5110-38 equivalent M50925 M62446 L7808CV equivalent SHARP HD44780 PIC-12043TE2
Contextual Info: Summer 2001 Part Number New! New! New! New! New! New! New! New! New! New! AD66761 AN1311 AN1311S AN1319 AN1319S AN1339 AN1339NS AN1393 AN1393NS AN1432 AN1458 AN1458S AN311 AN311S AN6572 AN7810 TO-220 AN78L06 AN78L08 AN78L09 AN78L18 AN78L20 AN78L24 AN78M10

KAD7001

Abstract: SBX1610-52 LA2785 MC1723CP equivalent lm723cn M62477 L7805CV equivalent M50727 M34510M4 sbx1610 UPC177C
Contextual Info: NJR Corporation 12/12/00 Cross Reference Guide Sorted By Part Number Part Number AN1311 AN1311S AN1319 AN1319S AN1339 AN1339NS AN1393 AN1393NS AN311 AN311S AN7810 TO-220 AN78L06 AN78L08 AN78L09 AN78L18 AN78L20 AN78L24 AN78M10 AN78M18 AN78M20 AN7924 AN79L05

IR PHOTO DIODE

Abstract: PHOTO TRANSISTOR 940nm infrared photo reflector NJL5147EL PHOTO TRANSISTOR NJL1104B NJL1120B NJL1121B NJL1127L NJL5165K-H2
Contextual Info: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode

PHOTO TRANSISTOR 940nm

Abstract: IR PHOTO DIODE PHOTO TRANSISTOR "Photo Detector" NJL811B NJL5147EL PHOTO detector "photo transistor" ir PHOTO TRANSISTOR IR DETECTOR
Contextual Info: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode

NJL62H300

Abstract: NJL63H300
Contextual Info: NJL61H /6 1 V/62H /63H /64H Q 00 m •« NJL60H/V000 v ' J - X l i ' J ' ÎiÉÂOT NJL50H/V000 ¿ i t í x L , n V ■& ■ { ■ * & < » Í - h3 > h□ 1 K > / < - * æ ftÜ O V -f > y * ' 6 ® l t •& • f t A '^ ÎC < , a v T T <, L X l' iT „ > y * ' *b «75S E S t c o ^ - f t

njl721b

Contextual Info: INFRARED EMITTER NJL1121B Features • H ig h - o u tp u t h ig h -s p e e d in fra re d e m ittin g d e v ic e u sin g G a A IA s S i • H ig h -o u tp u t e q u iv a le n t to a b o u t 4 tim e s th a t o f c o n v e n tio n a l p ro d u c ts o w in g to Ih e use o f G a A l A s c h ip a n d h e a d e r c u p

S100SM

Contextual Info: INFRARED EM ITTER NJL1120B • F eatures • H igh-output high-speed infrared em itting device using G a A lA s Si • H igh-output equivalent to about 2.4 tim es that of conven­ tional products owing to the use of G a A IA s chip ■ High response speed equivalent to about 2 times that of con­

NJL5126D

Abstract: NJL5125D NJL1110B NJL1112B NJL1120B NJL1120F NJL1121F NJL1122B NJL112IB NJL6103B
Contextual Info: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE •:MA33MÊt«te«* w m m m m m IF PD VR Xp [mW] H [nm] 150 100 6 940 DESCRIPTION NJL1104B NJL1110B NJL1112B NJL1120B NJL112IB NJL1122B NJL1120F NJL1121F GaAs Infrared LED 150 225 170 170 170 170

NJL811B

Abstract: NJL5165K-H1 NJL1120B NJL1121B NJL1127L NJL5165K NJL6103B NJL611B NJL612B NJL7112B
Contextual Info: 保守・廃品種一覧 1. 保守品種 品 目 フォトリフレクタ 品 名 NJL5165K-H1 代 替 品 NJL5165K-H2 相 違 点 外 形 ○ 特 性 ○ 2. 廃品種 品 目 赤外ＬＥＤ 品 名 代 替 品 相 違 点 NJL1104B − 外 形 − 特 性

YJ-7

Abstract: TI 68K
Contextual Info: Ä l'J'S h 7 > ÿ x i t Ht] i •NJL51 6 1K /63K/65K/67K*' 2 -65 - i S ' J ' b ^7 > i>^ 9 ititi- N JL 5 I6 5 K - H 2 . 2 -27 — s / j v a ^ - i j > b > m t¡- N J L 5 162K/64K/66K/68K*' 2 -19 N J L 5 I7 I K,.

4 digit dot matrix display

Abstract: color decoder TRANSISTOR dual infrared transistor njm2063 infrared receiver led infrared remote switch NJM4556 NJU9202B NJM2065A Infrared receiver module
Contextual Info: DISCONTINUE PRODUCTS TABLE 1 TYPE No. NJM NJM1372A NJM2048 NJM2049 NJM2063 NJM2063A NJM2065 NJM2065A NJM2066 NJM2067 NJM2075A NJM2097 NJM2104F NJM2105 NJM2106 NJM2127 NJM2151 NJM2160 NJM2171 NJM2175 NJM2185 NJM2203 NJM2204B NJM2208 NJM2219 NJM2220 NJM2225A

NJL721B

Contextual Info: NJL1121B C Jnq GaAIAs INFRARED EMITTING DIODE OUTLINE typ. Unit FEATURES • High output, high speed infrared emitting diode due to the use of GaAIAs. • High output — equivalent to 4 times approximately to that of our conventional products due to the use o f GaAIAs chip and header cup

NJL811B

Abstract: NJL721B NJL612B
Contextual Info: INFRARED EM ITTER NJL1121F • Features ■ H igh-output high-speed infrared em itting device using G aA lA s S i • High response speed equivalen* to about 2 times that of con­ ventional products. ■ High reliability with a m etal package. ■ W ith NJL611B, NJL612B, NJL721B, NJL722B,