NF 838 G Search Results

712M*838

Abstract: NF 838 G
Contextual Info: Series 72 Guardian 712M*838 Metal EMI/RFI Environmental Adapter for Mighty Mouse Connectors for Series 72 Annular Convoluted Tubing Metal Guardian System Mighty Mouse connector adapter fitting How To Order Angle: M, N, S Product Series 712 M Finish Table III

Contextual Info: MMA003AA 2-22GHz, 13dB Gain Low-Noise Wideband Distributed Amplifier Features • >15dBm P1dB with 1.8dB NF and 13dB gain at 10GHz • Gain flatness ~ +/-0.75dB • <2dB NF from 6-12GHz • Single supply voltage of +5V @ 50mA • Input and Output matched to 50Ω

Contextual Info: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching

Contextual Info: SAMSUNG ELECTRONICS INC bGE D • DG11SS7 b3b TRANSISTORS FUNCTION GUIDE 1-3. RF/VHF/UHF Amplifier Transistors 1-3-1. SOT-23 Type Transistors Device Condition It MHz C ob VcEO <pF) NPN G pe Condition NF(dB) hFE Ia s c (dB) Vce lc (V) (mA) MIN TYP MAX (V)

1n914 SOT323

Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which7 is designed for low power surface mount applications. http://onsemi.com

Contextual Info: m ìm n FLK012WF T U JIO U X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general

HI-8592

Abstract: outline of the heat sink for JEDEC HI-3584
Contextual Info: HI-8592, HI-8593, HI-8594 February, 2011 Single-Rail ARINC 429 Differential Line Driver GENERAL DESCRIPTION PIN CONFIGURATION TOP VIEW The HI-8592 bus interface product is a silicon gate CMOS device designed as a line driver in accordance with the ARINC 429 bus specifications. The part includes a negative voltage converter allowing it to operate from a single +5V supply using only two external capacitors. The part also features high-impedance outputs

FLK012WF

Contextual Info: FLK012WF X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general

Contextual Info: RF2411
 
   
      • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion

lna amplifier

Contextual Info: RF2448 Preliminary
    
            
      • CDMA PCS Handsets • General Purpose Down Converter • TDMA PCS Handsets • Commercial and Consumer Systems • GSM PCS Handsets • Portable Battery Powered Equipment

NF 838 G

Contextual Info: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4006F TV TUNER VHF RF AMPLIFIER APPLICATIONS. TV TUNER UHF RF AMPLIFIER APPLICATIONS. FM TUNER RF AMPLIFIER APPLICATIONS. FEATURES • On account of this Device Built-in Bias Circuit, Cut down number of articles.

3188 diode

Abstract: 124 008r
Contextual Info: HI-3182, HI-3183, HI-3184, HI-3185 HI-3186, HI-3187, HI-3188 ARINC 429 DIFFERENTIAL LINE DRIVER December 2003 GENERAL DESCRIPTION The HI-3182, HI-3183, HI-3184, HI-3185, HI-3186, HI-3187 and HI-3188 bus interface products are silicon gate CMOS devices designed as a line driver in accordance with the ARINC 429 bus

124 008r

Abstract: B13W ESD 138C
Contextual Info: HI-3182, HI-3183, HI-3184 HI-3185, HI-3186, HI-3188 September 2007 ARINC 429 Differential Line Driver GENERAL DESCRIPTION The HI-3182, HI-3183, HI-3184, HI-3185, HI-3186 and HI-3188 bus interface products are silicon gate CMOS devices designed as a line driver in accordance with the ARINC 429 bus specifications. In addition to being functional upgrades of Holt's HI-8382

IAM-81018

Abstract: active double balanced mixer IAM81018
Contextual Info: What H EW LETT WLïtm PACKARD IAM-81018 Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amp 180 mil Package Features 8 dB RF-IF Conversion Gain From 0.05 - 5 GHz IF Output From DC to 1 GHz Low Power Dissipation: 60 mW at Vcc = 5 V typ. Single Polarity Bias Supply: Vcc = 4 to 8 V

124 008r

Abstract: B13W
Contextual Info: HI-3182, HI-3183, HI-3184, HI-3185 HI-3186, HI-3187, HI-3188 March 2007 ARINC 429 Differential Line Driver GENERAL DESCRIPTION The HI-3182, HI-3183, HI-3184, HI-3185, HI-3186, HI-3187 and HI-3188 bus interface products are silicon gate CMOS devices designed as a line driver in accordance with the ARINC 429 bus

k0319

Abstract: HI-3183 HI-3185 HI-3182 HI-3184 HI-3186 HI-3188 HI-8382 HI-8383 HS-3182
Contextual Info: HI-3182, HI-3183, HI-3184 HI-3185, HI-3186, HI-3188 March 2008 ARINC 429 Differential Line Driver GENERAL DESCRIPTION The HI-3182, HI-3183, HI-3184, HI-3185, HI-3186 and HI-3188 bus interface products are silicon gate CMOS devices designed as a line driver in accordance with the ARINC 429 bus specifications. In addition to being functional upgrades of Holt's HI-8382

FREQ1477

Abstract: GRM36 HK1005 NJG1110PB1 17x17mm 6574M
Contextual Info: NJG1110PB1 PDC Dual Band LNA GaAs MMIC n GENERAL DESCRIPTION The NJG1110PB1 is a dual band low noise amplifier 2 input 2 output GaAs MMIC for 800MHz and 1500MHz band. The band switching between 800MHz and 1500MHz is established by one bit control signal by using built-in inverter circuit.

95mm2 power cable

Contextual Info: Advanced Contact Technology Railwayline Industrie-Steckverbinder Industrial Connectors Connecteurs industriels BTP-HE Zweipoliger berührungsgeschützter IP2X Steckverbinder Bipolar Touch Protected IP2X Connector Connecteur IP2X bipolaire protégé au toucher

LNA1

Abstract: KC810
Contextual Info: RF2469 Preliminary 8 W-CDMA AND PCS LOW NOISE AMPLIFIER/MIXER DOWNCONVERTER Typical Applications • W-CDMA Handsets • Commercial and Consumer Systems • PCS Handsets • Portable Battery-Powered Equipment • General Purpose Downconverter Product Description

Contextual Info: RF2469 Preliminary 8 W-CDMA AND PCS LOW NOISE AMPLIFIER/MIXER DOWNCONVERTER Typical Applications • W-CDMA Handsets • Commercial and Consumer Systems • PCS Handsets • Portable Battery-Powered Equipment • General Purpose Downconverter Product Description

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

IR2151

Abstract: Zener 224 400V 224 K capacitor
Contextual Info: Preliminary Data Sheet No. PD60083I IR51H D 224 IR51H(D)320 IR51H(D)420 SELF-OSCILLATING HALF BRIDGE Product Summary Features • • • • Output Power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type)

124 008r

Abstract: ESD 138C
Contextual Info: HI-3182, HI-3183, HI-3184, HI-3185 HI-3186, HI-3187, HI-3188 ARINC 429 DIFFERENTIAL LINE DRIVER July 2005 GENERAL DESCRIPTION The HI-3182, HI-3183, HI-3184, HI-3185, HI-3186, HI-3187 and HI-3188 bus interface products are silicon gate CMOS devices designed as a line driver in accordance with the ARINC 429 bus

IR2153

Abstract: ir2153 application IR2153D ir2153, pulse width IR53HD420 ir2153 power supply IR2153 CIRCUIT diagram application IR2153
Contextual Info: Preliminary Data Sheet No. PD60140J IR53H D 420(-P2) SELF-OSCILLATING HALF BRIDGE Features • • • • • • • • • • • • • • • • Product Summary Output power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation