NF 838 G Search Results

712M*838

Abstract: NF 838 G
Contextual Info: Series 72 Guardian 712M*838 Metal EMI/RFI Environmental Adapter for Mighty Mouse Connectors for Series 72 Annular Convoluted Tubing Metal Guardian System Mighty Mouse connector adapter fitting How To Order Angle: M, N, S Product Series 712 M Finish Table III

Contextual Info: MMA003AA 2-22GHz, 13dB Gain Low-Noise Wideband Distributed Amplifier Features • >15dBm P1dB with 1.8dB NF and 13dB gain at 10GHz • Gain flatness ~ +/-0.75dB • <2dB NF from 6-12GHz • Single supply voltage of +5V @ 50mA • Input and Output matched to 50Ω

Contextual Info: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching

Contextual Info: SAMSUNG ELECTRONICS INC bGE D • DG11SS7 b3b TRANSISTORS FUNCTION GUIDE 1-3. RF/VHF/UHF Amplifier Transistors 1-3-1. SOT-23 Type Transistors Device Condition It MHz C ob VcEO <pF) NPN G pe Condition NF(dB) hFE Ia s c (dB) Vce lc (V) (mA) MIN TYP MAX (V)

NF 838 G

Contextual Info: FUNCTION GUIDE TRANSISTORS 1-3. RF/VHF/UHF Amplifier Transistors 1-3-1. SOT-23 Type Transistors Device Condition V ce V NPN fT (MHz) C ob (pF) VcEO G pe (dB) MIN lc (mA) MIN TYP M AX (V) KSC2734(H8Z} KSC3120(H9Z) KSC2759{H6X) K ST 5 1 79 KSC2757(H3X) KSC2758(H4Z}

J525

Abstract: NF 838 G j525 transistor j133
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power IVansistor . . . designed for 12.5 volt UHF large-signal, common-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 806-960 MHz. • Specified 12.5 Volt, 870 MHz Characteristics

FLK012

Abstract: k d 998 0
Contextual Info: FLK012WF X - k i i B a n d P o w e r it/A s I E I s ABSOLUTE MAXIMUM RATING (Am bient Tem perature Ta=25°C Symbol (tern Condition Rating Ufirit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 1.15 w Total Power B N p M Pt Storage Temperature

f847

Abstract: MRF847 j525 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor . . . designed for 12.5 volt UHF large-signal, co m m o n -b a se am plifier applica­ tions in industrial and com m ercial FM equipm ent operating in the range of 8 0 6 -9 6 0 MHz.

1n914 SOT323

Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which7 is designed for low power surface mount applications. http://onsemi.com

310-001

Abstract: series 310
Contextual Info: 310 310-001 O-Ring Sealed Shrink Boot Adapter Rotatable Coupling - Standard Profile 310 F S 001 M 16 D T CONNECTOR DESIGNATORS Product Series A-F-D-G* H-J*-L-S Connector Designator ROTATABLE COUPLING Drain Holes 4 Places Optional Cable Entry E Table III

DIN 433

Abstract: 3x45 B 834 Y matsua capacitor 2 uf
Contextual Info: Insulating Parts B 25 901 For increasing the clearance of capacitors with screw terminals M10; minimum distance between the terminals: 35 mm. Suitable for case types B 25 834-+★★★★-K4 and B 25 838-+★★★★-K4. The insulating parts are made of polyamide.

Contextual Info: m ìm n FLK012WF T U JIO U X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general

HI-8592

Abstract: outline of the heat sink for JEDEC HI-3584
Contextual Info: HI-8592, HI-8593, HI-8594 February, 2011 Single-Rail ARINC 429 Differential Line Driver GENERAL DESCRIPTION PIN CONFIGURATION TOP VIEW The HI-8592 bus interface product is a silicon gate CMOS device designed as a line driver in accordance with the ARINC 429 bus specifications. The part includes a negative voltage converter allowing it to operate from a single +5V supply using only two external capacitors. The part also features high-impedance outputs

FLK012WF

Contextual Info: FLK012WF X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general

Contextual Info: RF2411
 
   
      • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion

C347

Abstract: RF2418
Contextual Info: RF2418
 

      • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • 433MHz and 915MHz ISM Band Receivers • Spread Spectrum Communication Systems • General Purpose Frequency Conversion

Hitachi transistor

Contextual Info: 2SC5141 Silicon NPN Epitaxial HITACHI ADE-208-228 1st. Edition Application V H F / U H F wide band amplifier Features • High gain bandwidth product fT = 5.8 G H z typ • High gain, low noise figure PG = 13 dB typ, N F = 1.6 dB typ at f = 900 M H z Outline

lna amplifier

Contextual Info: RF2448 Preliminary
    
            
      • CDMA PCS Handsets • General Purpose Down Converter • TDMA PCS Handsets • Commercial and Consumer Systems • GSM PCS Handsets • Portable Battery Powered Equipment

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er lY a n sisto rs . . . d e s ig n e d fo r 12.5 V olt U HF la rg e -s ig n a l, c o m m o n -e m itte r a m p lifie r applications in industrial and com mercial FM equipm ent operating in the range

HI-3182

Abstract: HI-3183 HI-3184 HI-3185 HI-3186 HI-3187 HI-3188 HI-8382 HI-8383 HS-3182
Contextual Info: HI-3182, HI-3183, HI-3184, HI-3185 HI-3186, HI-3187, HI-3188 ARINC 429 DIFFERENTIAL LINE DRIVER August 2006 GENERAL DESCRIPTION The HI-3182, HI-3183, HI-3184, HI-3185, HI-3186, HI-3187 and HI-3188 bus interface products are silicon gate CMOS devices designed as a line driver in accordance with the ARINC 429 bus

NF 838 G

Contextual Info: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4006F TV TUNER VHF RF AMPLIFIER APPLICATIONS. TV TUNER UHF RF AMPLIFIER APPLICATIONS. FM TUNER RF AMPLIFIER APPLICATIONS. FEATURES • On account of this Device Built-in Bias Circuit, Cut down number of articles.

ECG753

Abstract: ECG838 ODO4234 j068
Contextual Info: E C G INC PHILIPS 17E D bbS312fl 00 04232 3 T -7 4 -0 9 -0 1 ECG753, ECG838 W ide Band Amplifier Sem iconductors Features • High audio gain - 60dB minimum • Useful as a microphone amplifier and in tape recorders and cassettes • Excellent performance as a 10.7MHz

3188 diode

Abstract: 124 008r
Contextual Info: HI-3182, HI-3183, HI-3184, HI-3185 HI-3186, HI-3187, HI-3188 ARINC 429 DIFFERENTIAL LINE DRIVER December 2003 GENERAL DESCRIPTION The HI-3182, HI-3183, HI-3184, HI-3185, HI-3186, HI-3187 and HI-3188 bus interface products are silicon gate CMOS devices designed as a line driver in accordance with the ARINC 429 bus

124 008r

Abstract: B13W ESD 138C
Contextual Info: HI-3182, HI-3183, HI-3184 HI-3185, HI-3186, HI-3188 September 2007 ARINC 429 Differential Line Driver GENERAL DESCRIPTION The HI-3182, HI-3183, HI-3184, HI-3185, HI-3186 and HI-3188 bus interface products are silicon gate CMOS devices designed as a line driver in accordance with the ARINC 429 bus specifications. In addition to being functional upgrades of Holt's HI-8382