NF 810 Search Results

G993

Abstract: B8846NL B8846 Pots schematic SIN-346 adsl2 POTS filter B402 D-71083 z320 VDSL2
Contextual Info: XDSL SPLITTER FILTER MODULE SmartER series POTS CO splitter for standard ADSL2/VDSL2 ITU G993.2 applications LPF matched to ETSI complex impedance (ZL = 270Ω + 750Ω / 150 nF), option B of ETSI 101-952-1-1 v1.2.1 and to BT SIN-346 complex impedance (Z = 320Ω + 1050Ω / 230 nF)

SIN-346

Abstract: LPF,
Contextual Info: XDSL SPLITTER FILTER MODULE SmartER series POTS CO splitter for standard ADSL2/VDSL2 ITU G993.2 applications LPF matched to ETSI complex impedance (ZL = 270Ω + 750Ω / 150 nF), option A of ETSI 101-952-1-1 v1.2.1 and to BT SIN-346 complex impedance (Z = 320Ω + 1050Ω / 230 nF)

B8846NL

Abstract: SIN-346
Contextual Info: XDSL SPLITTER FILTER MODULE B8846NL SmartER Series POTS CO splitter for standard ADSL2/VDSL2 ITU G993.2 applications LPF compliant with ETSI complex impedance (ZL = 270 Ω + 750 Ω / 150 nF), option B of ETSI TS 101-952-1, v1.1.1 and to BT SIN-346 complex impedance (Z = 320 Ω + 1050 Ω / 230 nF)

Contextual Info: HYM536A414A M-Series •HYUNDAI 4M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A414A is a 4M x 36-bit EDO mode CMOS DRAM module consisting of nine HY5117404A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are mounted for each

Contextual Info: •HYUNDAI HYM536A414B M-Series 4M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HVM536A414B is a 4M x 36-bit EDO mode CMOS DRAM module consisting of nine HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitor is mounted for each

HFET-2202

Abstract: NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112
Contextual Info: - C OM PON EN TS HFET-2202 GaAs FETs LOW NOISE MICROWAVE GaAS FET H E W L E T T P A C KA R D • Features LOW NOISE FIGURE 1.1 dB Typical NF at 4 GHz, 1.4 dB Maximum 1.9 dB Typical NF at 8 GHz a HIGH ASSOCIATED GAIN 13.6 dB Typical Ga at 4 GHz, 12.0 dB Minimum

TBA 810 amplifier

Abstract: TBA810 TBA 810 audio amplifier AMPLIFIER TBA810 TBA810 12 pin 18 v audio amplifier TBA810AS tba 810 specifications 810 audio amplifier TBA810S tba 810
Contextual Info: TBA810S • TBA810AS Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendung: NF-Leistungsverstärker Application: Audio power amplifier Besondere Merkmale: • Thermische Abschaltung Features: • Thermal shut-down • Hoher Ausgangsstirom bis 2,5 A

BB502C

Abstract: ADE-208-810C PTSP0004ZA-A
Contextual Info: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0500 Previous ADE-208-810C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

BB502C

Abstract: C5 MARKING CODE SOT 247 rfc bb 204
Contextual Info: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0600 Previous ADE-208-810C Rev.6.00 Apr 27, 2006 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

Contextual Info: MPS-0810A9-02 800 to 960 MHz Linear Amplifiers Preliminary Data Sheet Features: MP S-0 810 1.1 dB NF 15.0 dB Gain +20.5 dBm P1dB A902 34 dBm IP3 Single Positive Bias Leadless Surface Mount Package The MPS-0810A9-02 is a low-noise, high dynamic range amplifier designed for ultra linear

ADSL 2 and VDSL2 splitter

Contextual Info: XDSL Splitter filter module B8845NL SmartER Series POTS and ISDN CO splitter for standard ADSL / VDSL2 applications LPF compliant with ETSI specification TS 101-952-1-4, v1.1.1 matched to DT Complex Impedance ZR = 220 Ω + 820 Ω / 115 nF and ISDN 4B3T

Contextual Info: + 85°C Standard Radial Lead Aluminum Electrolytic Capacitors 7 For a ll general purpose applications FEATURES • Standard size ■ Wide capacitance range: ■ Wide voltage range: 6.3 WVDC to 450 WVDC ■ Solvent tolerant end seals standard 0.1 nF to 15000 /jF

TSE 151

Abstract: BB502C DSA003644
Contextual Info: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

Contextual Info: MPS-081017P-02 800 to 960 MHz Amplifier High Dynamic Range Low Noise / Superior IP3 Preliminary Data Sheet Features: MP S-0 810 1 1.3 dB NF +44 dBm IP3 14.0 dB Gain 7P02 +26 dBm P1dB Single Positive Bias Leadless Surface Mount Package The MPS-081017P-02, is a low cost high linearity modular amplifier. The superior IP3

10PIN

Abstract: CXG1111EN GC712 L-367
Contextual Info: CXG1111EN 800MHz Band Receive Mixer Description The CXG1111EN is a mixer MMIC for the Japan CDMA cellular. This IC is designed using the Sony’s GaAs J-FET process. Features • High conversion gain: Gc = 13.0dB Typ. • Low noise figure: NF = 4.5dB (Typ.)

Contextual Info: Mini-Circuits - Specification for Amplifier - TO-0812LN Amplifier print this page TO-0812LN Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range DC Power Output 1 dB Comp. Input (no damage) NF dB Typ. 800-1200 20 ±1.00 +8.00

ADSL 2 and VDSL2 splitter

Contextual Info: XDSL SPLITTER FILTER MODULE B8859NL SmartER series POTS CO splitter for standard ADSL / VDSL2 applications LPF compliant with ETSI complex impedance ZL = 270 Ω + 750 Ω/150 nF , and option A of ETSI specification TS 101-952-1 v1.1.1, and with the optional requirement, relative to metering

ASW212

Contextual Info: Gain Block Amplifiers If not specified, the data @ 2 GHz Vd Id (V) (mA) S21 (dB) @ MHz OIP3 OP1dB NF S11 S22 (dBm) (dBm) (dB) (dB) (dB) Part Number ASG330 ASW114 Matching Circuit Frequency Package 900 2000 2400 2700 3500 5800 5.0 75 19.0 10.0 - - - - 43

V1-11

Contextual Info: XDSL SPLITTER FILTER MODULE SmartER Series POTS CO splitter for standard ADSL / VDSL2 applications LPF compliant with ETSI complex impedance ZL = 270 Ω + 750 Ω/150 nF , and option A of ETSI specification TS 101-952-1 v1.1.1, and with the optional requirement, relative to metering

split shell

Abstract: series 447
Contextual Info: 447 447-425 EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief Rotatable Coupling - Split Shell 447 F D 425 NF 16 12 K P CONNECTOR DESIGNATORS A-F-H-L-S ROTATABLE COUPLING Product Series Polysulfide Omit for none Connector Designator

Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

FUJITSU MMIC LNA

Abstract: FUJITSU LNA
Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK-4 s ^ÊBÊh 4 1. Source 2. G atel 3. Gate2 4. Drain