NF 565 IC Search Results

125 kHz "reader coil"

Abstract: u2270b demo
Contextual Info: Tem ic S e m i c o n d u c t o r s Extended Reading Range with Large Reader Antennas with U2270B Theoretical coupling factor via reading distance, optimized reader antenna diameter r = a a, r ( ram ) Figure 1. Coupling factor vs. coil radius and distance

Contextual Info: SKiiP 38NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 Tj = 25 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C tpsc 79 A 115 A Ts = 70 °C ICRM = 3 x ICnom IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in

skiip nab 125

Abstract: 3nab
Contextual Info: SKiiP 38NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

mmic sot-89

Abstract: darlington amplifiers SNA-487 sna-186 SNA-486 SNA-176 STANFORD sna476
Contextual Info: Stanford Microdevices Characteristics of GaAs MMIC 50 Ohm Gain Blocks This section contains G a A s M M IC gain blocks from Stanford Microdevices. The devices below provide exceptional performance from D C to as high as 10 GHz. These monolithic HBT Darlington amplifiers are designed

Phicap capacitors

Abstract: EPCOS MKP 40
Contextual Info: Film Capacitors Metallized Polypropylene Film Capacitors MKP Series/Type: B32656S Date: December 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 160 A Tc = 80°C 123 A 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 121 A Tc = 80°C 91 A 300 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 121

SOT-26

Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
Contextual Info: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 3xICnom VGES VCC = 800 V VGE ≤ 15 V Tj = 150 °C VCES ≤ 1200 V

SEMIX101GD12E4S

Contextual Info: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C

semix303gb12e4s

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V

Contextual Info: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX101GD12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SKiiP 38AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP 3 ICRM = 3 x ICnom tpsc V 115 A 93 A 100 A 300 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SKiiP 38AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP 3 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 1200 V 115 A 93

ic 7808

Abstract: da5276 remote u9280m u2270b demo U9280m magnetic door sensor MS-1 IMMOBILIZER Antenna Coil car alarm using a microcontroller TK5561 Transponder immobiliser
Contextual Info: Reader IC U2270B CFE 95 9860 COIL1 Driver & RF VS Oscillator COIL2 OSC Enable VBatt Power supply Standby MS =1 mC U2270B Output Input NF read channel GAIN The U2270B serves as interface between the transponder and the microcontroller that compares the received data.

B32686S

Contextual Info: Film Capacitors Metallized Polypropylene Film Capacitors MFP Series/Type: B32686S Date: December 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

SII400S12

Contextual Info: SII400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode

igbt module

Abstract: SID400S12 IGBT 300A IGBT 800
Contextual Info: SID400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode

ic 565 application

Abstract: ic 565 igbt module NF 565 ic SDI400S12 IGBT 300A
Contextual Info: SDI400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode

SKM100GAL12T4

Contextual Info: SKM100GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C