NF 565 IC Search Results

125 kHz "reader coil"

Abstract: u2270b demo
Contextual Info: Tem ic S e m i c o n d u c t o r s Extended Reading Range with Large Reader Antennas with U2270B Theoretical coupling factor via reading distance, optimized reader antenna diameter r = a a, r ( ram ) Figure 1. Coupling factor vs. coil radius and distance

Contextual Info: SKiiP 38NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 Tj = 25 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C tpsc 79 A 115 A Ts = 70 °C ICRM = 3 x ICnom IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in

skiip nab 125

Abstract: 3nab
Contextual Info: SKiiP 38NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

mmic sot-89

Abstract: darlington amplifiers SNA-487 sna-186 SNA-486 SNA-176 STANFORD sna476
Contextual Info: Stanford Microdevices Characteristics of GaAs MMIC 50 Ohm Gain Blocks This section contains G a A s M M IC gain blocks from Stanford Microdevices. The devices below provide exceptional performance from D C to as high as 10 GHz. These monolithic HBT Darlington amplifiers are designed

Phicap capacitors

Abstract: EPCOS MKP 40
Contextual Info: Film Capacitors Metallized Polypropylene Film Capacitors MKP Series/Type: B32656S Date: December 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B32656S8335

Abstract: B32656S2564 B32656S8105 562 B32656S0225 b32656s7125 562 smd diode code T7 B32656S B32656S7105 B32656S1274 B32656S1824 577
Contextual Info: Film Capacitors Metallized Polypropylene Film Capacitors MKP Series/Type: B32656S Date: February 2010 EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 160 A Tc = 80°C 123 A 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 121 A Tc = 80°C 91 A 300 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 121

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

SOT-26

Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
Contextual Info: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5

Contextual Info: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 3xICnom VGES VCC = 800 V VGE ≤ 20 V Tj = 150 °C VCES ≤ 1200 V

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 3xICnom VGES VCC = 800 V VGE ≤ 15 V Tj = 150 °C VCES ≤ 1200 V

SEMIX101GD12E4S

Contextual Info: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

SAA4940

Abstract: bit 3715 tms4c1070 free diagram tek 475 SAA4950 P6201 TDA8755 TDA8755T OF565
Contextual Info: NAPC/PHILIPS SEMICOND b3E D • bb53TE4 DD7flbbR hS3 » S I C S Philips S em iconductors Video Products_ Prelim inary specification YUV 8-bit video low-power analog-to-digital interface TDA8755 FEATURES APPLICATIONS • 8-bit resolution

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C

semix303gb12e4s

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V

Contextual Info: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX101GD12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules SKM100GB12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V

Contextual Info: SKiiP 38AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP 3 ICRM = 3 x ICnom tpsc V 115 A 93 A 100 A 300 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C

SEMIX101GD12E4S

Abstract: semikron cs
Contextual Info: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V