NF 034 Search Results

npn UHF transistor 2N5179

Contextual Info: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters

transistor NEC D 587

Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage

NEC 3536

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

2N5179

Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

2N5179

Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

2N5179

Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

817 CN

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

NEC D 809 F

Abstract: NEC D 809 71383B NEC D 809 k
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION

Contextual Info: S XLICON EBflCIMIEfi s.a. SCHOTTK7 ! VR i - BS BS BS BS BS 9 vF XF 0o IF 9\ min. (nA max. (V ) <mA) (V) <mA) 5 100 0.5 0.5 10 15 100 100 100 20 100 0 .4 0.4 0.4 0.4 0.4 1' 10 10 DIODE vf 0 . C A S E max. 10 10 10 10 0.6 0.6 0.7 S T Y L E max. (nF>

C61 capacitor

Abstract: r100 resistor PHILIPS capacitors 0402 CC2420EM CC2400EB SFM-110-02-S-D-A-K-TR C106 capacitor samtec connector 1.25mm P1 SMD smd marking 2x5
Contextual Info: User Manual Rev. 1.0 SmartRF CC2420DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3

SFM-110-02-S-D-A

Abstract: SFM-110-02-S-D-A-K-TR smd marking 2x5 CC2400EB tfm-110 r100 resistor CC2400EM SMD L81 Samsung tantal tfm-110-02-s-d-a
Contextual Info: User Manual Rev. 1.1 SmartRF CC2400DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3

CC1020 PA LNA

Abstract: HC-49 SMD CONN10M c_2p2_0402_np0_c_50 c40 capacitor 33N04 CC1020EMX-433 12N04 smd transistor bc846 smd diode L23
Contextual Info: User Manual Rev. 1.1 SmartRF CC1020/1070DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Support tel. +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of Contents: INTRODUCTION .3

C106 capacitor

Abstract: r120 Resistor 18p06 C103 C106 CC1050 CT52 Capacitor Tantal SMD TANTAL R HC-49 SMD
Contextual Info: User Manual Rev. 1.11 SmartRF CC1050DK Development Kit Chipcon AS, Gaustadalléen 21, N-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3

C1000

Abstract: CC1000 10K-0603 HC-49 SMD cc1000dk
Contextual Info: User Manual Rev. 2.11 SmartRF CC1000DK Development Kit Chipcon AS, Gaustadalléen 21, N-0349 Oslo, Norway. Support tel. +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents: INTRODUCTION .3

C code for ATMEGA8 rs232

Abstract: ATMEGA 32 AVR DATASHEET atmega 8 c coding AVR109 C61 capacitor CC2400 2X10 C101 CC2400DBK CC2400DK
Contextual Info: User Manual Rev. 1.2 SmartRF CC2400DBK Demonstration Board Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3

Contextual Info: Series 800 Series 800 Mighty Mouse with UN Mating Thread Overmolded Cordsets 800-034 Abrasion-Resistant Polyurethane Jacket provides cold temperature flexibility and high strength. Low smoke/zero halogen material meets requirements for low toxicity. 90% Tinned Copper Braid is terminated

Contextual Info: Series 800 Series 800 Mighty Mouse with uN Mating thread overmolded Cordsets 800-034 Abrasion-Resistant Polyurethane Jacket provides cold temperature lexibility and high strength. Low smoke/zero halogen material meets requirements for low toxicity. 90% Tinned Copper Braid is terminated

Contextual Info: Series 800 Series 800 Mighty Mouse with UN Mating Thread Overmolded Cordsets 800-034 Abrasion-Resistant Polyurethane Jacket provides cold temperature flexibility and high strength. Low smoke/zero halogen material meets requirements for low toxicity. 90% Tinned Copper Braid is terminated