NF 034 Search Results

npn UHF transistor 2N5179

Contextual Info: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters

transistor NEC D 587

Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage

NEC 3536

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

2N5179

Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

ALM-1106

Abstract: GPS lna gps to microcontroller 4350B ALM1106 LLP1005-FH10NC LLP1005-FH4N7NC LLP1005-FH5N6C RO4350B GPS RECEIVER L10
Contextual Info: ALM-1106 as a 1.575 GHz GPS Low Noise Amplifier Application Note 5240 Introduction Many of today’s GPS receiver LNA designs are based on discrete transistors rather than using MMICs because designs using discrete transistors result in amplifiers with lower Noise Figure NF . Figure 1 shows a typical GPS LNA

2N5179

Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

2N5179

Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

817 CN

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

TRANSISTOR D434

Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION

6463 tube

Abstract: application note pll 4046 pwm 4070 CMOS XOR CD 4017 PIN DIAGRAM erf8 C8 4922 7s TMP87CC31N 331102 4011 TOSHIBA TMP87CM36N
Contextual Info: TOSHIBA TMP87CC31/H31 CMOS 8 -BIT MICROCONTROLLER TMP87CC31 Nf TMP87CH31N The 87CC31/H31 the high speed and high performance 8 -b it single chip m icrocom puter. This MCU contains CPU core, ROM, RAM, in p u t / o u tp u t ports, six m u lti-function tim e r / counters, on-screen display, PWM, 6 -b it

Contextual Info: S XLICON EBflCIMIEfi s.a. SCHOTTK7 ! VR i - BS BS BS BS BS 9 vF XF 0o IF 9\ min. (nA max. (V ) <mA) (V) <mA) 5 100 0.5 0.5 10 15 100 100 100 20 100 0 .4 0.4 0.4 0.4 0.4 1' 10 10 DIODE vf 0 . C A S E max. 10 10 10 10 0.6 0.6 0.7 S T Y L E max. (nF>

C61 capacitor

Abstract: r100 resistor PHILIPS capacitors 0402 CC2420EM CC2400EB SFM-110-02-S-D-A-K-TR C106 capacitor samtec connector 1.25mm P1 SMD smd marking 2x5
Contextual Info: User Manual Rev. 1.0 SmartRF CC2420DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3

SFM-110-02-S-D-A

Abstract: SFM-110-02-S-D-A-K-TR smd marking 2x5 CC2400EB tfm-110 r100 resistor CC2400EM SMD L81 Samsung tantal tfm-110-02-s-d-a
Contextual Info: User Manual Rev. 1.1 SmartRF CC2400DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3

CC1020 PA LNA

Abstract: HC-49 SMD CONN10M c_2p2_0402_np0_c_50 c40 capacitor 33N04 CC1020EMX-433 12N04 smd transistor bc846 smd diode L23
Contextual Info: User Manual Rev. 1.1 SmartRF CC1020/1070DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Support tel. +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of Contents: INTRODUCTION .3

C106 capacitor

Abstract: r120 Resistor 18p06 C103 C106 CC1050 CT52 Capacitor Tantal SMD TANTAL R HC-49 SMD
Contextual Info: User Manual Rev. 1.11 SmartRF CC1050DK Development Kit Chipcon AS, Gaustadalléen 21, N-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3

C1000

Abstract: CC1000 10K-0603 HC-49 SMD cc1000dk
Contextual Info: User Manual Rev. 2.11 SmartRF CC1000DK Development Kit Chipcon AS, Gaustadalléen 21, N-0349 Oslo, Norway. Support tel. +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents: INTRODUCTION .3

C code for ATMEGA8 rs232

Abstract: ATMEGA 32 AVR DATASHEET atmega 8 c coding AVR109 C61 capacitor CC2400 2X10 C101 CC2400DBK CC2400DK
Contextual Info: User Manual Rev. 1.2 SmartRF CC2400DBK Demonstration Board Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3