NEWMARKET TRANSISTORS Search Results

Cv7003

Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
Contextual Info: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm

NKT677

Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Contextual Info: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

Newmarket Transistors

Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

2N2458

Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec

Contextual Info: Data Sheet PA2631T1R R07DS0991EJ0101 Rev.1.01 Sep 04, 2013 P-CHANNEL MOSFET –20 V, –6.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Data Sheet PA2670T1R R07DS0833EJ0101 Rev.1.01 Apr 15, 2013 DUAL P-CHANNEL MOSFET –20 V, –3.0 A, 79 mΩ Description The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 Nov 28, 2012 –30 V, –85 A, 2.8 mΩ Description The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features • VDSS = −30 V TA = 25°C

Contextual Info: Data Sheet N0439N N-channel MOSFET R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 40 V, 90 A, 3.3 mΩ Description This product is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS on = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )

PA2660T1R

Contextual Info: Data Sheet PA2660T1R R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 mΩ Description The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Data Sheet PA2630T1R R07DS0990EJ0100 Rev.1.00 Dec 27, 2012 P-CHANNEL MOSFET –12 V, –7.0 A, 28 mΩ Description The μPA2630T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Data Sheet PA2672T1R R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 DUAL P-CHANNEL MOSFET –12 V, –4.0 A, 67 mΩ Description The μPA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Data Sheet PA2631T1R R07DS0991EJ0100 Rev.1.00 Dec 27, 2012 P-CHANNEL MOSFET –20 V, –8.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Data Sheet PA2600T1R R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Preliminary Data Sheet NP89N055MUK, NP89N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0600EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP90N04VDK R07DS1017EJ0100 Rev.1.00 Feb 21, 2013 40 V – 90 A – N-channel Power MOS FET Application: Automotive Description The NP90N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications.

np60n055muk

Abstract: NP60N055M
Contextual Info: Preliminary Data Sheet NP60N055MUK, NP60N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0598EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance

NP45N06PUK

Abstract: NP45N06VUK
Contextual Info: Preliminary Data Sheet NP45N06VUK, NP45N06PUK R07DS0953EJ0100 Rev.1.00 Nov 20, 2012 60 V – 45 A – N-channel Power MOS FET Application: Automotive Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Contextual Info: Preliminary Data Sheet NP90N055MUK, NP90N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0602EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP89N04MUK, NP89N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0599EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP75N055YUK R07DS1005EJ0100 Rev.1.00 Feb 08, 2013 55 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.

Contextual Info: Preliminary Data Sheet NP75N04YUK R07DS1004EJ0100 Rev.1.00 Feb 08, 2013 40 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.

np90n04muk

Contextual Info: Preliminary Data Sheet NP90N04MUK, NP90N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0601EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP50N04YUK R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 40 V – 50 A – N-channel Power MOS FET Application: Automotive Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.