NEC MICROWAVE SEMICONDUCTORS Search Results

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

bipolar transistor NEC

Contextual Info: \ Smal l S i g n a l Si l i c o n B i p o l a r T r a n s i s t o r s \ NEC is a global force in the microwave amplifier designs, and ultra optoelectronic semiconductor products — communications and home electronics fast rise and fall times for high-speed

Contextual Info: NEC and California Eastern Labs — A Pa r tn e rs h i p Built on Qua l i t y NEC is a global force in the titanium, platinum, platinum-silicide, designed to meet rigorous Just-In-Time communications and home electronics and gold — assuring you of the highest

nec lot number on packing label

Abstract: nec lot number nec example of lot number NEC Microwave Semiconductors NEC PART NUMBER MARKING NEC E1 REEL
Contextual Info: Information TAPING SPECIFICATIONS AND PACKING OUTLINE DRAWING OF 8-PIN PLASTIC SSOP 4.45 mm (175 FOR MICROWAVE SEMICONDUCTORS Document No. P12403EJ3V0IF00 (3rd edition) Date Published July 2001 N CP(K) Printed in Japan 1997, 2001 [MEMO] 2 Information P12403EJ3V0IF

transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority

westcode scr

Abstract: toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR
Contextual Info: 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power Conversion Products Our valued suppliers Click on the supplier name below to visit their storefront on www.rell.com Richardson Electronics’ RF, Wireless & Power Division designs and distributes

NEC transistors

Contextual Info: Silicon and G aA s Monolithic Circuits NEC is a global force in the parasitics, improved passivation, and optoelectronic semiconductor products — computer, communications and home emitter line widths as small as 0.6 microns. many of which are developed at our joint

2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The

Contextual Info: Small Signal GaAs FETs NEC is a global force in the conditions, so you can use them to are available off the shelf. For information computer, communications and home enhance your design’s performance with on part and package availability, check electronics markets. The company's products

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

uhf microwave fet

Contextual Info: Discrete P o w e r Devices NEC is a global force in the added efficiency, high linearity' to -42 dBc optoelectronic semiconductor products — computer, communications and home guaranteed in DL series devices , and low many of which are developed at our joint

OD-8453N

Abstract: OD-S524-FCFPC-SM OD-S524-SCFPC-SM NEC Microwave Semiconductors
Contextual Info: Rev. 1.2 March 11, 2002 OD-8453N SMT-InGaAs PIN Module For CATV / Analog Video FEATURES n n n n Surface Mountable. Small Size Flat Ceramic Package 7.6 x 12.7 x 3 mm . High Resposivity : R = 0.9 A/W. Low Intermodulation Distortion IMD2≤ − 75dBc , IMD3≤ − 95dBc.

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

nec microwave

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS FEATURES HIGH OUTPUT POWER: 0 5 W Units in r PACKAGE OUTLINE 99 HIGH LINEAR GAIN: 9 5 dB -5.2i0.3-*j HIGH EFFICIENCY (PAE : 38% - 1 . 0 ± 0.1 N SUPERIOR INTERMODULATION DISTORTION

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

POWER SUPPLY ICs

Contextual Info: NEC Electronics Power Management Devices Div. Guide Introduction to the Power Management Devices Division Make Evolution, Meet Ecology Pursuing the possibilities of discrete and dedicated ICs Top quality-nothing less We offer an extensive lineup of products in fields ranging from automotive electronics to PCs and PC

152900

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 11.5 dB V dsx Drain to Source Voltage V

sot-89 BV SMD TRANSISTOR MARKING CODE

Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Contextual Info: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ

NE27200

Abstract: NEC Microwave Semiconductors
Contextual Info: NONLINEAR MODEL SCHEMATIC NE27200 LD 0.14 nH Q1 DRAIN LG GATE 0.25 nH LS 0.01 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 1 VTO -0.85 RG VTOSC RD 4 ALPHA 6 RS 3 BETA 0.11 RGMET TQGAMMA 0.07 TNOM 27 TQGAMMAAC 0.075 XTI 3 Q 2 EG

sumitomo connectors

Abstract: opnext Edd 44 OC-768 JP3407400005
Contextual Info: Leading Optical Device Manufacturers Release Common Specifications for 40 Gbit/s Solutions Based on XLMD Optical Device Multi-Source Agreement Multi-Source Agreement Enables Multiple Vendors to Produce 40 Gbit/s Optical Devices Based on a Unified Standard

nec optocoupler

Contextual Info: PRELIMINARY DATA SHEET FLAT LEAD PACKAGE , HIGH COLLECTOR-EMITTER VOLTAGE SINGLE TRANSISTOR OPTOCOUPLER PS2913-1 FEATURES ABSOLUTE MAXIMUM RATINGS1 TA = 25°C • MINI FLAT LEAD PACKAGE: 4.9 (L) x 2.5 (W) x 2.1 (H) mm .SYMBOLS • HIGH COLLECTOR TO EMITTER VOLTAGE:

bjt 137

Abstract: 50E-12 NESG2030M16
Contextual Info: NONLINEAR MODEL NESG2030M16 CCB SCHEMATIC LCX LBX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NESG2030M16 IS 2.42e-13 MJC 0.16 CCB 0.04e-12 BF 500 XCJC 1

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of