NEC MARKING XY Search Results

GPI048

Abstract: upd3 PD30111
Contextual Info: ¿¿PD30111 NEC 23. ELECTRICAL SPECIFICATIONS This section shows the electrical specifications of versions 1.1 and 2.0 of the V r41 11. The revision is identified by the marking in the top of the package. 23.1 Version 1.1 Absolute Maximum Ratings T a = 25°C

uPD78F9212

Abstract: TPS-LE-OP-F9212 of upd78f9212 upd78f9211 marking f9212 U18104EE3V0IF00 PU22 date code marking NEC uPD78F9210 uPD78F9211
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

N0300N

Abstract: N0300N-T1B-AT D1978 marking xy NEC MARKING XY n0300
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR N0300N N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The N0300N is a switching device which can be driven directly by 0.4 +0.1 –0.05 0.65 –0.15 a 4.5 V power source. FEATURES

pc574

Abstract: uPC574 574J C10535E PC574J nec k 1006 IC1006 uPC574C upc574 nec
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC574 MONOLITHIC BIPOLAR INTEGRATED CIRCUIT VOLTAGE STABILIZER FOR ELECTRONIC TUNER The µPC574 is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners. FEATURES

3SK243

Abstract: NEC 1369
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK243 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS T h e C h a ra cte ristic of C ro ss-M o d u la tio n is good. CM = 101 d B ju T Y P . @ f = 470 MHz, G r = -3 0 dB

nec 2532

Abstract: lem 4202 NEC 2504 free ic 2034 2SC4228 ic 4521 NEC JAPAN 282 110 01 NEC+2532
Contextual Info: DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.

PFA113A

Abstract: NEC 2705 opto PFA1AN PFA141B PFA122A PFA141A PFA141E ps7200 PFA112A PFA222A
Contextual Info: OPTICAL COUPLED MOS FET SELECTION GUIDE September 2000 [MEMO] 2 Selection Guide P11633EJAV0SG00 CAUTION Within this device there exits GaAs Gallium Arsenide material which is a harmful substance if ingested. Please do not under any circumstances break the

N0300N-T1B-AT

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC4227

Abstract: 1 928 403 698
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.

2sc4226

Abstract: 2SC4226 APPLICATION NOTES
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA810T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The µPA810T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS

Contextual Info: DATA SHEET CEL GaAs HJ-FET INTEGRATED CIRCUIT flPG2253T6S RF FRONT-END 1C FOR 2.4 GHz Bluetooth , ZIGBEE, ISM BAND DESCRIPTION T h e ^P G 2 2 5 3 T 6 S is a RF front-e nd in tegrated circu it F E IC fo r B luetooth C lass 1, Z igB ee, and ISM Band and in clud es T X /B yp a ss sw itches, a po w e r am plifier, and a lo w -pa ss filter. T h is de vice do es not req uire a n y RF

TD-2411

Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters PART NUMBER QUANTITY 2SC5011-T1 3 Kpcs/Reel.

NEC 7924

Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1

nec 2412

Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1

NEC 2561A

Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
Contextual Info: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

TRANSISTOR XL08

Abstract: XL08 TI08 T46C lj11 T 3361 001
Contextual Info: X I • I ÎS NEC m C o m p o u n d T ra n s is to r GN 1L3Z U□ > Y=7>i>^ JS if c r t i P N P x f t 9mH i t * e : mm o '< 4 t (R i = 4 .7 kQ ) B O— W V R, k? — ô E o GA1L3Z t 3 >7° U ^ > ? U T'fêfflT'ë i 1“ c (T a = 25 °C) m 3- 9 ì "/ ^ s

3SK244

Abstract: 3SK244D U94 marking
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK244 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • U ltra Low N o ise F ig u r e : NF = 2.2 dB T Y P . f = 900 M Hz • High P ow er G ain

Ic 6116 pin configuration details

Abstract: 2SC4228
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

634-111-2

Abstract: 2SC4226 2SC4226 APPLICATION NOTES UPA810T LEM 718
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec 772

Abstract: 2SC4227
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC4570

Abstract: xy 801 ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1

induction cooker fault finding diagrams

Abstract: induction cooker schematic diagram EDS SHIELD DOMESTIC GAS DETECTOR schematic diagram induction cooker 3 gun sound generator UM 3562 NEC plasma tv schematic diagram ultrasonic flaw detector LS 2027 Final Audio LS 2027 audio Ultrasonic humidifier circuit
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

lem 55.2

Abstract: UPA814T 795-29-9 2SC5193 3699 npn NEC 2506 741 LEM
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • Low Voltage Operation, Low Phase Distortion • Low Noise