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    nec d 588

    Abstract: NEC 2532 NEC 2504
    Contextual Info: DATA SHEET SILICON TRANSISTOR PA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The /PA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS am plify low noise in the VHF band to the UHF band.


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    uPA811T 2SC4228) /xPA811T nec d 588 NEC 2532 NEC 2504 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR PA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The ¿¡PA811T has built-in 2 low-voltage transistors w hich are designed to PACKAGE DRAW INGS am plify low noise in the VHF band to the UHF band.


    OCR Scan
    A1PA811T 2SC4228) PA811T PA811T PDF