NEC MARKING POWER AMPLIFIER Search Results

marking C1s

Abstract: PC2747 SUPER CAPACITOR BASED CIRCUIT MPC2747TB-E3
Contextual Info: PRELIMINARY DATA SHEET_ M F f ~ / BIPOLAR ANALOG INTEGRATED CIRCUITS / //PC2747TB, /¿PC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The /iPC2747TB, /¿PC2748TB are silicon monolithic integrated circuits designed as amplifier, for mobile

transistor NEC D 588

Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

Package Marking C2s

Abstract: Mini-Mold PPC1675G PPC1676G PPC1688G PPC2791 PPC2791TB PPC2791TB-E3 PPC2792 PPC2792TB
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PPC2791TB, PPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The PPC2791TB and PPC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer amplifier for

marking R33

Abstract: 2SC4227 2SC4227-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

2SC4226

Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

c2792

Abstract: marking C2s UC1676 2791t
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS juPC2791TB, juPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The \ i PC2791TB and /¿PC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer am plifier for

2SC4228

Abstract: 2SC4228-T1 TRANSISTOR R44
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

TFL08

Contextual Info: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.

PC2747TB

Abstract: PDC800M
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2747TB,µPC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.

PPC8128TA

Abstract: PPC8128TA-E3 PPC8128TB PPC8151TA PPC8151TA-E3 PPC8152TA PPC8152TA-E3
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PPC8128TA, PPC8151TA, PPC8152TA SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer

2SA812

Abstract: 2SC1623 MEI-1202 TC-5166 ic 926
Contextual Info: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters 2.8 ± 0.2 -8 Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. Vce = -6.0 V, Ic = -1 .0 mA

NEC 2581

Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05

mmic marking c1b

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2791TB, uPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The ¿iPC2791TB and ¿iPC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer amplifier for

TFL0816-2N7

Abstract: TFL0816-6N8 TFL0816-8N2 marking g2m
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2128TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.

marking g2p

Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.

grm39ck1r5c50

Abstract: TFL0816-12N TFL0816-2N2 TFL0816-8N2 GRM39CH101J50
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.

MARKING G1V

Abstract: marking G1Y G1V GRM39CH020C50PB RR0816P-102-D
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.

2SC2351

Abstract: marking R2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. @ f = 1.0 GHz • MAG 14 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS Units: mm +0.1 0.4 −0.05 2.8±0.2 +0.1 1.5

B52 transistor

Abstract: Bw5 transistor MARKING B52 transistor b54 2SB736 2SB736A 2SD780 2SD780A 2SB736AB51
Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S B 7 3 6 .2 S B 7 3 6 A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM EN SIO N S The 2SB736, 2SB736A are designed for use in small type equipments espe­ in millimeters

6pin 1052

Abstract: uPC1688 PC1676G 6-pin ic 237 C3H marking marking C2s
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2791TB, µPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The µPC2791TB and µPC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer amplifier for Among the 6-pin mini/super minimold amplifiers, µPC2791TB and µPC2792TB have unique pin

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ¿¿PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The /iPC3210TB is

2SD596

Abstract: D1298 SSA250 transistor dv4
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom­ mended for hybrid integrated circuit and other applications.

marking C1s

Abstract: PDC800M NEC C1R 6-PIN 907 09 03 000 6181
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2747TB, µPC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS DESCRIPTION The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.