NEC FO 134 Search Results

B0588

Abstract: 42k4 PD17204 UPD 74H
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ¿UPD 17204 4-BIT SINGLE-CHIP MICROCONTROLLER WITH 8K-BIT STATIC RAM AND 3-CHANNEL TIMER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The /iPD 17204 is a 4-bit single-chip m icrocontroller fo r infrared rem ote controller. Integrated on the same

NEC 1093

Abstract: isp macro lib D17010
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ÍP D 1 7 0 1 0 4-BIT SINGLE-CHIP MICROCONTROLLER WITH HARDWARE DEDICATED TO DIGITAL TUNING SYSTEM The ¿¡PD17010 is a 4 -b it sin g le -c h ip C M O S m ic ro c o n tro lle r c o n ta in in g hardw are fo r d ig ita l tuning system s.

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

IC-8100

Abstract: MPE GARRY
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ¿ ¿ P D 1 7 5 3 O N -C H IP IM A G E D IS P L A Y C O N T R O L L E R 4 -B IT S IN G L E -C H IP M IC R O C O N T R O L L E R FO R V O L T A G E S Y N T H E S IZ E R juPD17053 includes the image display controller IDC which is capable of various displays and the 4-bit single­

IC-8100

Abstract: NEC uPD 833 MPE GARRY NEC2561 P2B E8 seven segment ulf 800H 0090H-EH 0830H-EH NEC 08F
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ¿ ¿ P D 1 7 5 3 O N -C H IP IM A G E D IS P L A Y C O N T R O L L E R 4 -B IT S IN G L E -C H IP M IC R O C O N T R O L L E R FO R V O L T A G E S Y N T H E S IZ E R juPD17053 includes the image display controller IDC which is capable of various displays and the 4-bit single­

pd1708ag

Abstract: 708AG upd1701
Contextual Info: _ PRELIMINARY SPECIFICATION NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ju P D I S IN G L E -C H IP M IC R O C O M P U T E R W IT H 7 0 8 A G B U IL T -IN R P E S C A L E R , PLL F R E Q U E N C Y S Y N T H E S IZ E R A N D L C D D R IV E R The /¿PD1708 is a 4 -b it CMOS m icrocom puter fo r digital tuning, w hich incorporates a prescaler th a t can be

UPD1701

Abstract: ic 2429 upd1709 ADS varactor diode SMR 60000 lh 9032 pd1701 UPD1703 UPD1704 UPD1719
Contextual Info: DATA SHEET NEC M O S INTEGRATED C IR C U IT ELECTRON DEVICE ¿ íP D 1 7 P 2 3 S IN G L E -C H IP M IC R O C O M P U T E R B U IL T -IN E P R O M , PRESCALER, PLL F R E Q U E N C Y S Y N T H E S I Z E R , IF C O U N T E R A N D L C D D R I V E R juPD17P23 is a 4 -b it CMOS m icrocom puter fo r digital tuning, containing EPROM, a prescaler which can w ork

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT UPD45D128442,45D128842,45D128164 128 M-bit Synchronous DRAM with Double Data Rate 4-bank, SSTL_2 D e s c rip tio n The ^¡PD45D128442, 45D128842, 45D128164 are high-speed 134,217,728 bits synchronous dynamic randomaccess memories, organized as 8,388,608x4x4, 4194,304x8x4, 2,097,152x16x4 (word x bit x bank), respectively.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT u P D 4 5 D 1 2 8 4 4 2 ,4 5 D 1 2 8 8 4 2 ,4 5 D 1 2 8 1 6 4 128 M-bit Synchronous DRAM with Double Data Rate 4-bank, SSTL_2 Description The ^¡PD45D128442, 45D128842, 45D128164 are high-speed 134,217,728 bits synchronous dynam ic randomaccess memories, organized as 8,388,608x4x4, 4194,304x8x4, 2,097,152x16x4 (word x bit x bank), respectively.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ // PD23C128040L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The ^¡PD23C128040L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ // PD23C128000L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The ^¡PD23C128000L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE

Biphase decoder

Abstract: MPC1346CS P24GM-50-300B-1
Contextual Info: PRELIMINARY PRODUCT INFORMATION A • b427SES 0D4T2flb bTT B I N E C E - ¿ V fS V / BIPOLAR ANALOG INTEGRATED C IR C U IT E L E C T R O N D E V IC E / i jm /■ % //P C 1 3 4 6 / RDS DATA DEM ODULATOR 1C The /iPC 1346 is the data demodulator IC for RDS Radio Data System: A multiplex broadcasting method with digital data

NEC NF 932

Abstract: nec 501 t
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION P A C K A G E DIM ENSIO NS T h e 2 S C 4 0 9 2 is an NPN silicon epitaxial tra n s is to r d e sig n e d fo r low- Units: mm

PD65000

Abstract: 8748 NEC CMOS-5 NEC nec 8748 94Q3 NEC CMOS-4
Contextual Info: SEC CMOS-5 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIM INARY Description The CM O S-5 gate arrays are low -pow er, high-speed integrated circu its fea tu ring 1.2-m icron silicon -ga te CMOS technology. The basic cell on the gate array chip consists o f six transistors, three p-channel and

NE42484A

Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

NEC Ga FET marking L

Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO

sp 0937

Abstract: NEC D 809 F NEC K 2124 NEC D 809 L
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-2E 2 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-2E is pow er GaAs FET which provides 8.25 +0.15 high gain, high efficiency and high output power in KuGate

transistor NEC D 822 P

Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

6852 d TRANSISTOR

Abstract: 2SC3357 DA RH SOT-89 nec 765 Transistor ge 718
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2 S C 3 3 5 7 is an NPN silicon ep itaxia l tra n s is to r de sig n e d for PACKAGE DIMENSIONS Unit: mm low noise a m p lifie r at V H F , U H F and C A T V band.

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA805T MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD PACKAGE DRAWINGS FEATU RES • Low N oise, H igh Gain • O p e ra b le at Low V o lta g e • S m all Feed-back C apacitance

4214 ap

Abstract: sem 2106 2SC4703 2SC470-3 transistor NEC D 587 ic nec 2051 transistor NEC D 586
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage V ce = 5 V . This low distortion

NE334501

Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.