NEC 40 NM Search Results

Contextual Info: NEC n P D 70208 V 40 8 /1 6-Bit Microprocessor: High-Integration, CMOS NEC Electronics Inc. Description The ^PD70208 (V40'“ ) is a high-performance, lowpower 16-bit microprocessor integrating a number of commonly used peripherals to dramatically reduce the

D80C35

Abstract: 8085A hex code UPD80C35 NEC 80C48 S20PF tCy-750 NEC Electronics uPD Series tCY-25 80c48 AD-0950
Contextual Info: NEC //PD80C35/C48, n PD48 8-BIT, SINGLE-CHIP CMOS MICROCOMPUTERS NEC Electronics Inc. 40-Pin Plastic DIP c c XTAL2 c R ESET L SS c < o The //PD80C35, //PD80C48, and //PD48 are true stand­ alone 8 -bit microcomputers fabricated using CMOS technology. All of the functional blocks necessary for

Contextual Info: SEC ' MC-42256AA40 262,144 x 40-Bit Dynamic CMOS RAM Module ' NEC Electronics Inc. Prelim inary Information May 1992 Description Pin Configuration The M C-42256AA40 is a fa s t-p a g e dynam ic RAM m od­ ule organized as 262,144 words by 40 bits and designed

IC3014

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000AA40 SERIES 1 M-WORD BY 40-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000AA40 is a 1 048 576 words by 40 bits dynamic RAM module on which 10 pieces of 4 M bits CMOS Dynamic RAM /{PD424400 are assembled.

TFK S 186 P

Abstract: tfk 138 JUPD70236 TFK S 186 TFK 162 -12 mrd 148 D70236A tfk 189 p
Contextual Info: NEC /¿PD70236A 15. ELECTRICAL SPECIFICATIONS Available Electrical Specifications - - _ _ _ _ _ V dd = 5 V ±10% V dd = 3.6 to 4.5 V V dd = 2.7 to 3.6 V Remarks 15.1 HPD70236A-10 HPD70236A-12 HPD70236A-16 HPD70236A-20 T a = -40 to +85 °C

OD8311

Abstract: 8311N
Contextual Info: Preliminary OD-8311NI NEC 1310 nm SMT-LD Module 2mW OD-8311N is a new surface-mount low cost 1310 nm LD module. This module can achieve stable operation over wide temperature range of -40 to +85°C. An InGaAs PIN monitor photodiode is built in for APC (Automatic Power Control) circuit.

OD-8310N

Contextual Info: Preliminary QD-8310N NEC 1310 nm SMT-LD Module 1mW OD-8310N is a new surface-mount low cost 1310 nm LD module. This module can achieve stable operation over wide temperature range of -40 to +85°C. An InGaAs PIN monitor photodiode is built in for APC (Automatic Power Control) circuit.

Contextual Info: O OD-S 493 1310am F P - LD Mo d u 1 e with built— n optical NEC isolator FEATURES Distortion IMD2£-53dBc IMD3^-53dBc RINS-130dB/Hz Pf=1.0aV A =1310m Tc=-40 to 85 *C Noise Optical output power Wavelength Operation over vide temperature Built-in optical isolator

Contextual Info: NEC n n - R a i i 1310m F P - L D M o d u l e O.lif OD-8344 is a high performance 13l0nm Multiple Quantum Well (MQW) LD module. This device can achieve stable operation over wide temperature range of -40 to +85 “C . An InGaAs PIN monitor photodiode is

Contextual Info: NEC O D - 8 3 4 5 1310m F P - L D M o d u l e 2mW OD-8345 is a high perform ance 1310nm M ultiple Q uantum Well (MQW) LD module. This device can achieve stable operation over wide tem perature range of -40 to +85 “C . An InGaAs PIN m onitor photodiode is

NDL1102

Abstract: LF50 bh27ss5 SE1003-C SE301A SE302A SE303A-C SE304 SE306 SE307-C
Contextual Info: N E C ELECTRONICS INC 30E D bH27SS5 DOSSSb? T NEC OPTOELECTRONIC DEVICES L igh t Em itting D iodes cont. Remoie Control Absolute Maximum Ratings (Ta = 2» C) Ir TYP. (f/A) (V„=3V) -65 to +125 1.2 (lp=50 mA) 0.01 50 -30 to +80 1.2 150 100 1.25 -40 to +100

6256 RAM

Abstract: nec 2601
Contextual Info: - 2 5 6 K * iä&ieffl m % it £ *C UPD41257V-15 NEC 0-70 nMOS 'f -y * > r Dyna mi c # TAH nin (ns) TP my (ns) TCAD nin (ns) nin (ns) 260 25 25 100 TRAC max (ns) TRCY 120 nin R AM ( 2 6 2 1 4 4 x 1 ) IE tt nin (ns) TDH nin (ns) TRWC min (ns) ?.m 40 310 V D D or V C C

u729

Abstract: D42644
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT JU PD 426 4 40 0 , 4 2 6 5 4 0 0 64M -BIT DYNAMIC RAM 16 M-WORD BY 4-BIT FAST PAGE MODE D es c rip tio n The /iPD426440Q, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.

TOSA MQW Laser diode SFP

Abstract: NX7312UA NX7313UA NX7314UA NX8310UA NX8311UD STM-16 PX10160E NEC semiconductor
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8310UA 1 310 nm FOR LONG HAUL 622 Mb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8310UA is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for

Contextual Info: DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6301S Series

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX7315UA 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE TOSA DESCRIPTION The NX7315UA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP

bfy 40

Abstract: STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
Contextual Info: OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE May 2001 SAFETY INFORMATION ON THIS PRODUCT NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT

310 thermistor

Abstract: COAXIAL AUDIO ic nec laser diode OTDR NDL7103 NDL7113 NDL7153 NDL7163 NDL7503P NDL7513P NX7661JB
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX7661JB InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB is a 1 625 nm newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical

NX8300BE-CC

Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC 10 gb laser diode 600 um laser fiber medical mqw-dfb
Contextual Info: DATA SHEET LASER DIODE NX8303BG-CC,NX8303CG-CC 1 310 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 622 Mb/s DESCRIPTION The NX8303BG-CC and NX8303CG-CC are 1 310 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial module with single mode fiber.

Contextual Info: DATA SHEET LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION

GR-468-CORE

Abstract: NX7312UA NX7313UA NX7314UA TOSA
Contextual Info: DATA SHEET LASER DIODE NX7312UA 1 310 nm FOR SHORT HAUL 156 Mb/s AND 622 Mb/s InGaAsP MQW-FP LASER DIODE TOSA DESCRIPTION The NX7312UA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP

NX7300BA-CC

Abstract: NX7301BA-CC NX7302BA-CC NX7303BA-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX7300BA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NX7300BA-CC is a 1 310 nm Fabry-Perot FP laser diode coaxial module with single mode fiber. It has a Multiple Quantum Well (MQW) structure and a built-in InGaAs monitor photo diode.

NX5302

Abstract: NX5302EH NX5302SH NX5302SI NX5302SJ NX5302SK
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5302 Series 1 310 nm FOR 156 Mb/s, SHORT HAUL 622 Mb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5302 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, short haul and