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    NX7661JB Search Results

    NX7661JB Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NX7661JB
    California Eastern Laboratories InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION Original PDF 25.19KB 2
    NX7661JB
    NEC Original PDF 48.51KB 8
    NX7661JB
    NEC Fiber Optic Components Original PDF 520.77KB 14
    NX7661JB-BA
    California Eastern Laboratories InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION Original PDF 25.19KB 2
    NX7661JB-BC
    California Eastern Laboratories 1625 Nm Ingaasp Mqw Fp Pulsed Laser Diode In Dip Package For Otdr Application (120 Mw Min) Original PDF 180.56KB 4
    NX7661JB-BC
    NEC 1625 nm InGaAsP MQW FP pulsed laser diode for OTDR application (120 mW min). With FC-PC connector. Original PDF 106.28KB 3
    NX7661JB-BC-AZ
    California Eastern Laboratories NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) Original PDF 180.57KB 4

    NX7661JB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    nec laser diode OTDR

    Abstract: NX7661JB-BC NX7661JB-BC-AZ
    Contextual Info: NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 120 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP


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    nx7661jb-bcnec laser diode otdrnx7661jb-bc-az PDF

    NX7661JB-BC

    Contextual Info: NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 120 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP


    Original
    nx7661jb-bc PDF

    Contextual Info: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION NX7661JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width PW = 10 ms, Duty = 1% The NX7661JB is a 1625 nm developed strained Multiple


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    nx7661jb PDF

    otdr

    Abstract: NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7661JB-BC
    Contextual Info: DATA SHEET LASER DIODE NX7661JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.


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    nx7661jb-bc14-pinotdrnx7327bf-aa+5nx7328bf-aanx7329bb-aanx7361jb-bcnx7526bf-aanx7527bf-aa PDF

    thermistor 102

    Abstract: NX7561JB NX7661JB NX7661JB-BA
    Contextual Info: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION NX7661JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width PW = 10 ms, Duty = 1% The NX7661JB is a 1625 nm developed strained Multiple


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    nx7661jbthermistor 102nx7561jbnx7661jb-ba PDF

    310 thermistor

    Abstract: COAXIAL AUDIO ic nec laser diode OTDR NDL7103 NDL7113 NDL7153 NDL7163 NDL7503P NDL7513P NX7661JB
    Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX7661JB InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB is a 1 625 nm newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical


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    nx7661jb14-pin310 thermistorcoaxial audio ic+7nec laser diode otdrndl7103ndl7113ndl7153ndl7163ndl7503pndl7513p PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861 PDF

    otdr

    Abstract: NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7561JB-BC 81 110 thermistor
    Contextual Info: DATA SHEET LASER DIODE NX7561JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7561JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.


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    nx7561jb-bc14-pinotdrnx7327bf-aa+6nx7328bf-aanx7329bb-aanx7361jb-bcnx7526bf-aanx7527bf-aa81 110 thermistor PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    310 thermistor

    Abstract: k 2545 NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7528BF-AA OTDR
    Contextual Info: DATA SHEET LASER DIODE NX7361JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7361JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.


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    nx7361jb-bc14-pin310 thermistork 2545+7nx7327bf-aanx7328bf-aanx7329bb-aanx7526bf-aanx7527bf-aanx7528bf-aaotdr PDF

    10G EML TOSA

    Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
    Contextual Info: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely


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    acros88-224704/2m10g eml tosatosa 10g dfb+8eml tosa 25g10g apd rosatosa 10g emllaser dfb 1550nm 10mwnec tosa 10g10g tosa eml25g eml tosatosa 1310 10g PDF