NEC 24PIN DIP Search Results

S24C MARK

Abstract: tsop 3602 9020 8-pin SOP SIP 400B nec 1251 P100G thomson 462 t P5VP-340B3-2 J 80222 P28D-100-600A1-1
Contextual Info: Packages Plastic DIP Dual In-line Package Units in mm 8-pin plastic DIP (300mil) 8 5 1 4 14-pin plastic DIP with TAB (300mil) 14 8 1 7 20.32 MAX. 7.62 10.16 MAX. 24.60 MAX. 7.62 4.31 MAX. 6.4 0.9 MIN. 6.4 5.08 MAX. 5.08 MAX. 4.31 MAX. 2.54 0.51 MIN. 2.54

nec 40-pin plastic dip

Abstract: 40 PIN CERDIP cerdip 28 pin ceramic dip nec 40 pin dip nec 40 pin plastic dip
Contextual Info: TUBE CONTAINER UNIT : mm 8.6 15.5 18.3 11.2 22.4 SC-600-1P Length : 495±2.0 Thickness : 0.7+0.3 −0.2 Tolerance : ±0.4 Material : Plastic With Antistatic Finish Applied Package Quantity(pcs) 24-pin Plastic DIP MAX. 14 24-pin Ceramic DIP (Cerdip) MAX. 15

uPC5023

Abstract: oa203 PC5023 PC617 OA205 OA206 OA202 OA204 PC177 OF 8 pin DIP IC 1251
Contextual Info: Analog Master September,2001 Wave Wave We can find various size of waves generated in the ocean. The wave is sometimes energetic sometimes week according to the forces of nature and the gravitational effect of the moon, an infinitely continuous activity. We can also find another kind of wave in electric circuits: the wave

uPB10422

Contextual Info: SEC pPB10422 256 X 4-Bit 10K ECL RAM NEC Electronics Inc. Pin Configurations 24-Pln Ceramic DIP < o o > Description The pPBl0422 is a very high-speed 10K interface ECL RAM organized as 256 words by 4 bits and designed with noninverted, open-emitter outputs and low power con­

Contextual Info: NEC NEC Electronics Inc. PPD4363B 16,384 X 4-Bit Static CMOS RAM Description Pin Configuration The /JPD4363B is a 16,384-word by 4-bit static RAM fabricated with advanced silicon-gate technology. A unique design using CMOS peripheral circuits and N-channel memory cells with polysilicon resistors

NEC 20PIN DIP

Abstract: NEC 28PIN DIP MD400 NEC 24PIN DIP SSD-A-H6525-1 cerdip MD400-05A
Contextual Info: TUBE CONTAINER UNIT : mm 7.5 13.5 12.5 7.0 17.9 MD400-05A length : 495±2.0 +0.2 thickness : 0.5−0.1 tolerance : ±0.4 material : plastic with antistatic finish Applied Package Quantity (pcs) 14-pin • Plastic DIP MAX. 24 20-pin · Plastic DIP MAX. 17

apd436

Abstract: 7830A 834H-4831A L-7830A VQH200 L7830
Contextual Info: #|PD4363B 16,384 X 4-Bit Static CMOS RAM m I li W NEC Electronics Inc. Description Pin Configuration The /JPD4363B is a 16,384-word by 4-bit static RAM fabricated with advanced siiicon-gate technology. A unique design using CMOS peripheral circuits and N-channel memory cells with polysilicon resistors

fbii

Abstract: APB100422 D-10 IUPB100422D-7 CERAMIC FLATPACK CERAMIC FLATPACK socket
Contextual Info: N E C H ELECTRONICS INC blE D • mS7S2S 00353S5 f  à 'r * 34=5 « N E C E J*PB10 0 4 2 2 2 5 6 X 4 -B it NEC Electronics Inc. 100K ECL RAM T -V b '-Q j^ Description Pin Configurations The jaPB 100422 is a very high-speed 100K interface ECL RAM organized as 256 words by 4 bits and designed with

Contextual Info: fiPD43254 M -J W 65,536 X 4-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The juPD43254 is a 65,536-word by 4-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the /j PD43254 a high­

NEC 24PIN DIP

Abstract: S3YL-743M
Contextual Info: PPD43251B 262,144 X 1-Bit Static CMOS RAM ¿ K J E /W NEC Electronics Inc. Description Pin Configuration The / jPD43251B is a 262,144-word by 1-bit static RAM fabricated with advanced silicon-gate technology. A unique design that uses CMOS peripheral circuits and

Contextual Info: NEC NEC blectronics Inc. //P B 1 0 0 4 2 2 2 5 6 x 4 -B IT 1 0 0 K ECL RAM Description Pin Configurations The /uPB100422 is a very high-speed, 100K interface E C L R A M . It is organized as 256 w ords by 4 bits with noninverted, open-emitter outputs and low power

LA25

Abstract: 203A14
Contextual Info: pPD43251B 262,144 X 1-Bit Static CMOS RAM MJ W NEC Electronics Inc. Description Pin Configuration The juPD43251B is a 262,144-word by 1-bit static RAM fabricated with advanced silicon-gate technology. A unique design that uses CMOS peripheral circuits and

Contextual Info: NEC /IPB10422 256 X 4-Bit 10K ECL RAM NEC Electronics Inc. Description Pin Configurations The ftPB10422 is a very high-speed 10K interface ECL RAM organized as 256 words by 4 bits and designed with noninverted, open-emitter outputs and low power con­ sumption. Two versions with fast access times of 7 and

Contextual Info: fiPB10474E 1024 X 4-Bit 10K EC L RAM NEC Electronics Inc. Description Pin Configurations The ji/PB10474E is a very-high-speed 10K interface ECL RAM organized as 1024 words by 4 bits and designed w ith noninverted, open-em itter ou tputs and low power consum ption.

Contextual Info: W7 S * P y lÆ JJ W /tPB100422 256 X 4-Bit 100K ECL RAM NEC Electronics Inc. Description Pin Configurations The jtPB100422 is a very high-speed 100K interface ECL RAM organized as 256 words by 4 bits and designed with noninverted, open-emitter outputs and low power con­

Contextual Info: NEC pPB10474E 1024 X 4-Bit 10K ECL RAM NEC Electronics Inc. Description Pin Configurations The /UPB10474E is a very-high-speed 10K interface ECL RAM organized as 1024 words by 4 bits and designed with noninverted, open-emitter outputs and low power consumption.

83FM-8849A

Contextual Info: ÍIPB100474E 1024 X 4-Bit 100K ECL RAM NEC Electronics Inc. Description Pin Configurations The /JPB100474E is a very-high-speed 100K interface ECL RAM organized as 1024 words by 4 bits and designed with noninverted, open-emitter outputs and low power consumption.

Contextual Info: P PD43254B 65,536 X 4-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /JPD43254B is a 65,536-word by 4-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the pPD43254B a high­

nec d28c04

Contextual Info: NEC #|PD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /jPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power

Contextual Info: JC V* JC W NEC Electronics Inc. fiPD43251 262,144 X 1-Bit Static CMOS RAM Description Pin Configuration The fiPD43251 is a 262,144-word by 1-bit static RAM fabricated with advanced silicon-gate technology. A unique design that uses CMOS peripheral circuits and

JJPB10474E

Abstract: JUPB10474E uPB10474 ecl eor
Contextual Info: N E C ELECTRONICS INC blE T> m NEC Electronics Inc. b427525 DÜ3S31G IflO • NECE JUPB10474E 1024 X 4-Bit 10 K ECL RAM Description Pin Configurations The ¿¿PB10474E is a very-high-speed 10K interface ECL RAM organized as 1024 words by 4 bits and designed

cf options m1h

Contextual Info: fiPD75P56/P66 4-Bit, Single-Chip, One-Time Programmable OTP CMOS Microcomputers W ith Comparator (if f t y NEC Electronics Inc. Ordering Information Description The nPD75P56 and /xPD75P66 are 1024 x 8 -bit, on-chip, one-time programmable (OTP) ROM versions of the

D42264

Abstract: HPD42264C-10 JHPD42264 JJPD42264 JUPD42264 PPD42264 D4226
Contextual Info: NEC JVPD42264 Dual-Port Graphics Buffer N EC E lec tro n ics Inc. Description Features The ¿iPD42264 is a dual-port graphics buffer equipped with a 64K x 4-bit random access port and a 256 x 4-bit serial read port. The serial read port is connected to an

PD16877

Abstract: UPA1602GS MOS FET Array UPA1600CX PD16814 uPD16833AGS-9JH PD16805 mil grade LED lamps sop array fet 30-pin nec
Contextual Info: NEC INTELLIGENT POWER MOS LSI Motor Actuator Driver, Power ICs September 1999 NEC INTELLIGENT POWER MOS LSI Preface As an increasing number of high-performance, compact systems have become available in recent years, power devices have been required not only to drive