NEAR IR PHOTODIODES Search Results

S1226-8BK

Contextual Info: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications Suppressed near IR sensitivity Analytical equipment High sensitivity in UV region quartz glass type Optical measurement equipment, etc.

S1226-44BK

Abstract: S1226-18BK
Contextual Info: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications High UV sensitivity: QE=75 % λ=200 nm Analytical equipment Suppressed near IR sensitivity Optical measurement equipment, etc. Low dark current

Contextual Info: Si photodiodes S2386 series For visible to near IR, general-purpose photometry Features Applications High sensitivity in visible to near infrared range Analytical instruments Low dark current Optical measurement equipment High reliability Superior linearity

Contextual Info: Si photodiodes S2386 series For visible to near IR, general-purpose photometry Features Applications High sensitivity in visible to near infrared range Analytical instruments Low dark current Optical measurement equipment High reliability Superior linearity

hamamatsu S1223

Abstract: S1223
Contextual Info: Si PIN photodiodes S1223 series For visible to near IR, precision photometry Features Applications High sensitivity in visible to near infrared range Optical measurement equipment High reliability Analytical equipment, etc. High-speed response S1223: fc=30 MHz

Photodiodes

Abstract: yag Electrical circuit S11499 TO-8 Package
Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically

InGaAs PIN photodiode Long Wavelength 2.6

Abstract: ir photodiode array ingaas
Contextual Info: InGaAs PIN Photodiodes Near IR detectors with low noise and superior frequency response • Standard types Standard types cover a spectral response from 0.9 to 1.7 |im, and available with 7 active areas ranging from 0.08 mm to 5.0 mm in diam­ eter. Applications include optical communications, power meter, near

IR photodiode array

Contextual Info: InGaAs PIN Photodiodes Near IR detectors with low noise and superior frequency response • Standard types S tan d ard types co ver a spectral resp onse from 0 .9 to 1.7 pirn, and available with 7 active areas ranging from 0 .0 8 mm to 5 .0 mm in diam ­ eter. Applications include optical com m unications, power m eter, near

Contextual Info: Si photodiodes S1336 series UV to near IR for precision photometry Features Applications High sensitivity in UV range Analytical instruments Low capacitance Optical measurement equipment High reliability Structure / Absolute maximum ratings Type no. Dimensional

photosensitive

Abstract: S1336-8BK S1336-5BQ
Contextual Info: Si photodiodes S1336 series UV to near IR for precision photometry Features Applications High sensitivity in UV range Analytical instruments Low capacitance Optical measurement equipment High reliability Structure / Absolute maximum ratings Type no. S1336-18BQ

FIL-3C

Abstract: fil 3c
Contextual Info: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,

PIN-10D

Abstract: PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI
Contextual Info: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

Contextual Info: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .

S8380

Abstract: S8380-128Q S8380-256Q S8380-512Q S8381-1024Q S8381-256Q S8381-512Q YM 512
Contextual Info: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .

S8380-512Q

Abstract: S8381-256Q S8380 S8380-128Q S8380-256Q S8381-1024Q S8381-512Q
Contextual Info: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .

Contextual Info: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .

Contextual Info: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .

CLD141

Abstract: CLD141R
Contextual Info: CLD141. CLD141R Ç ? Clairex Silicon Planar photodiodes Technologies, Inc. features • • • • • 70° acceptance angle 860nm peak response TO-46 hermetic package large photosensitive area usable for visible through near-IR absolute maximum ratings TA = 25°C unless otherwise stated

Contextual Info: Si photodiodes S2592/S3477 series Thermoelectrically cooled photodiodes for low-light-level detection in UV to near IR The S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making these sensors suitable for low-light-level detection where a high S/N is required.

PIN-5DI

Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI
Contextual Info: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such

TO-5 header

Abstract: CLD156 CLD156R
Contextual Info: CLD156. CLD156R S f Clairex Large Active Area Silicon Planar photodiodes features • • • • Technologies, me. May, 2001 absolute maximum ratings (TA = 25°C unless otherwise stated 100° acceptance angle 860nm peak response TO-5 hermetic package usable for visible through near-IR