NE02135
Abstract: NE68035 NE68135 NE85635 NE21935 marking 34 NE856 45 marking NE85635/CEL NE85635 packaging schematic
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 35 2 3.8 MIN ALL LEADS 0.5±0.06 3 1 A X 45˚ MARKING 4 LOT CODE 2.55±0.2 +0.06 0.1 -0.04 f 2.1 1.8 MAX 0.55 PART NUMBER NE02135 NE21935
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ne02135ne21935ne68035ne68135+7ne8563524-hourmarking 34ne85645 markingne85635/celne85635 packaging schematic
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NE856
Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e
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ne8562sc3355micro-x marking 865ne and micro-x+6ne85632nec ne856352sc42262sc50062sc5011ne85600
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016p
Abstract: NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP
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ne856016pne85633-t1b-anec ne85635+7transistor nec b 882 pnec 2501 le 737ne85600mje 1303ne and micro-x2sc50062sc5011
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973-120
Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST
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ne856ne85632ne85633-t1bne85634-t1+13ne85635ne85639-t1ne85639r-t1973-1202sc3357marking k "micro xmicro-x marking 865ne and micro-xnec c 324 cnec ne85635transistor marking 551 sot-892sc42262sc5006
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MJE 1532
Abstract: transistor bf 760 sot-89 Marking LB 931 NE85630 NE85635 packaging schematic NE AND micro-X NEC NE85635 2SC4226 2SC5006 2SC5011
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST
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ne856ne85632ne85633-t1bne85634-t1+13ne85635ne85639-t1ne85639r-t1mje 1532transistor bf 760sot-89 marking lb 931ne85630ne85635 packaging schematicne and micro-xnec ne856352sc42262sc50062sc5011
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transistor NEC D 882 p
Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP
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ne856transistor nec d 882 ptransistor c 1349transistor bf 479+1ne85630-t1-a
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LB 122 transistor To-92
Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)
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ne856ne8560024-hourlb 122 transistor to-92+7ne85632mje 1532nec ne856352sc42262sc50062sc5011ne85635
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BA 5982
Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X
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ne856av3000ne85639r-t1ba 5982+8143r0709snec d 882 p transistortransistor nec d 882 p7m 0880 icnec ne85635ceramic micro-x package015e1
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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220v AC voltage stabilizer schematic diagram
Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.
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batte48220v ac voltage stabilizer schematic diagram1000w inverter pure sine wave schematic diagramphilips ecg master replacement guide+7ecg semiconductors master replacement guidediac 3202bta16 6008csr1000mini audio transformer 200k to 1k ct inputjrc 2904 dbta12 6008
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