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    NE350 Datasheets (27)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NE350184C
    		California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF 194.32KB 8
    NE350184C-T1
    		California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF 194.31KB 8
    NE350184C-T1A
    		California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF 194.32KB 8
    NE3503M04
    		California Eastern Laboratories SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET Original PDF 355.92KB 7
    NE3503M04
    		NEC C To Ku Band Super Low Noise and High-Gain Amplifier N-Channel HJ-FET Original PDF 67.34KB 9
    NE3503M04-A
    		California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 12GHZ M04 Original PDF 8
    NE3503M04-A
    		California Eastern Laboratories NECs C TO Ku BAND SUPER LOW NOISE and HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET Original PDF 355.93KB 7
    NE3503M04-T2
    		NEC Original PDF 67.35KB 9
    NE3503M04-T2-A
    		California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 12GHZ M04 Original PDF 8
    NE3503M04-T2-A
    		California Eastern Laboratories NECs C TO Ku BAND SUPER LOW NOISE and HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET Original PDF 355.93KB 7
    NE3503M04-T2B-A
    		CEL Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 4V 12GHZ M04 Original PDF 436.71KB
    NE3508M04
    		California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISITOR Original PDF 1.3MB 11
    NE3508M04-A
    		California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ 4-TSMM Original PDF 9
    NE3508M04-A
    		California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISITOR Original PDF 1.3MB 11
    NE3508M04-EVNF23-A
    		California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL DEV RF NE3508M04 Original PDF 9
    NE3508M04-T2
    		California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF 1.36MB 11
    NE3508M04-T2-A
    		California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ 4-TSMM Original PDF 9
    NE3508M04-T2-A
    		California Eastern Laboratories HETERO JUNCTION FIELD EFFECT TRANSISITOR Original PDF 1.3MB 11
    NE3509M04
    		California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF 1.25MB 11
    NE3509M04
    		California Eastern Laboratories L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF 204.07KB 9
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    NE350 Price and Stock

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    Renesas Electronics Corporation NE3503M04-T2B-A

    HIGH-GAIN AMPLIFIER N-CHANNEL RF FET
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    Verical () NE3503M04-T2B-A 105,000 312
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    NE3503M04-T2B-A 45,000 312
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    NE3503M04-T2B-A 13,494 312
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    Rochester Electronics NE3503M04-T2B-A 163,494 1
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    Renesas Electronics Corporation NE3505M04-T2-A

    Trans FET
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    Verical NE3505M04-T2-A 11,300 361
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    Rochester Electronics NE3505M04-T2-A 11,300 1
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    Renesas Electronics Corporation NE3503M04-T2-A

    Trans FET N-CH 4V 70mA HFET 4-Pin Thin-Type Super Mini-Mold T/R
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    Verical () NE3503M04-T2-A 9,000 312
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    NE3503M04-T2-A 8,304 312
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    NE3503M04-T2-A 5,480 312
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    NE3503M04-T2-A 3,000 312
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    NE3503M04-T2-A 3,000 312
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    Rochester Electronics NE3503M04-T2-A 28,784 1
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    Delkin Devices DE32TNKNE-35000-D

    32GB SLC 2.5" SSD SATA III I-TEMP (-40C - +85C) - Trays (Alt: DE32TNKNE-35000-D)
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    Avnet Americas DE32TNKNE-35000-D Tray 10 5
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    Newark DE32TNKNE-35000-D Bulk 5
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    Avnet Silica DE32TNKNE-35000-D 143 Weeks 5
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    Delkin Devices DE2HTNJNE-35000-D

    256GB SLC 2.5" SSD SATA III I-TEMP (-40C - +85C) - Trays (Alt: DE2HTNJNE-35000-D)
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    Avnet Americas DE2HTNJNE-35000-D Tray 5
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    Newark DE2HTNJNE-35000-D Bulk 5
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    Avnet Silica DE2HTNJNE-35000-D 143 Weeks 5
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    Find more NE350 price and stock on Findchips.com

    NE350 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE3505M04

    Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only


    Original     		ne3505m04ne3505m04-t250pcsrn/50+3fl-240nec ga fet marking lne3505 PDF

    NE3508M04

    Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67
    Contextual Info: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )


    Original     		ne3508m04ne3508m04-a50pcsne3508m04-t2+3ne3508m04-t2-apower transisitor 100v 2atransisitor 02 p 67 PDF

    transistor marking v75 ghz

    Abstract: NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-t2transistor marking v75 ghzpg10456ej01v1ds+5hs350nec marking power amplifiernec microwavem04 markingne3503 PDF

    NE350184C

    Abstract: NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier
    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		ne350184cne350184c-t1ne350184c-t1-ane350184c-t1a+8ne350184c-t1a-ane350antyrogers 5880rt/duroid 588017802aga-13hs350k-band amplifier PDF

    V75 marking

    Abstract: NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin
    Contextual Info: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD


    Original     		ne3503m04ne3503m04-ane3503m04-t2-av75 marking+5transistor marking v75 ghzlnb ku bandhs350m04 markingv75 4pin PDF

    transistor marking v80 ghz

    Abstract: HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna
    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		ne3509m04ne3509m04-ane3509m04-t2ne3509m04-t2-a+6transistor marking v80 ghzhs350ne3509dsa0029112ne3509m04. s2psdars lna PDF

    NE3508M04-T2-A

    Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		ne3508m04ne3508m04-ane3508m04-t2ne3508m04-t2-a+3hs350marking v79ne3508 PDF

    NEC Ga FET marking L

    Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		ne3508m04ne3508m04-ane3508m04-t2ne3508m04-t2-a+5ne3508m04-t2bne3508m04-t2b-anec ga fet marking lnec microwavehs350 PDF

    nec v80

    Abstract: NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		ne3509m04ne3509m04-ane3509m04-t2ne3509m04-t2-a+5ne3509m04-t2bne3509m04-t2b-anec v80nec ga fet marking lhs350 PDF

    V75 marking

    Contextual Info: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD


    Original     		ne3503m04ne3503m04-ane3503m04-t2-air260+2hs350v75 marking PDF

    NEC Ga FET marking L

    Abstract: a 933 transisitor NT 407 F 0429 01 2701 00 NE3509M04 NE3509 cel 502 Power Transisitor 100V 2A NE3509M04-A NE3509M04-T2
    Contextual Info: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )


    Original     		ne3509m04ne3509m04-a50pcsne3509m04-t2+8ne3509m04-t2-anec ga fet marking la 933 transisitornt 407 f0429 01 2701 00ne3509cel 502power transisitor 100v 2a PDF

    nec v80

    Abstract: transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		ne3509m04ne3509m04-ane3509m04-t2ne3509m04-t2-a+6nec v80transistor marking v80 ghzne3509hs350ne3509m04. s2psdars lna PDF

    NE350184C

    Abstract: NE350184C-T1A ne350184c-t1-a ne350184c-t1a-a NEC Ga FET marking L HS350 NE350184C-T1 k-band amplifier
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		ne350184cne350184c-t1ne350184c-t1-ane350184c-t1a+4ne350184c-t1a-anec ga fet marking lhs350k-band amplifier PDF

    transistor marking v75 ghz

    Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350
    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-t2ne3503m04-t2bne3503m04-a+6ne3503m04-t2-ane3503m04-t2b-apg10456ej03v0dstransistor marking v75 ghzlnb ku bandhs350 PDF

    microwave office

    Abstract: transistor marking v75 ghz nec microwave
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-t2ne3503m04-ane3503m04-t2-a+4ne3503m04-t2b-amicrowave officetransistor marking v75 ghznec microwave PDF

    transistor marking M04 GHZ

    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		ne3508m04ne3508m04-ane3508m04-t2ne3508m04-t2-a+3ne3508m04-t2bpg10586ej02v0dstransistor marking m04 ghz PDF

    transistor marking v75 ghz

    Abstract: transistor v75
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-t2transistor marking v75 ghztransistor v75 PDF

    transistor marking v75 ghz

    Abstract: nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking
    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-ane3503m04-t2ne3503m04-t2-a+8ne3503m04-t2bne3503m04-t2b-atransistor marking v75 ghznec microwavetransistor v75hs350lnb ku bandv75 marking PDF

    NE3509M14

    Abstract: MARKING ZR sdars lna
    Contextual Info: Data Sheet NE3509M14 N-Channel GaAs HJ-FET, L to C Band Low Noise R09DS0011EJ0100 Rev.1.00 Amplifier Jan 21, 2011 FEATURES • Super low noise figure and high associated gain high isolation NF = 0.4 dB TYP., Ga = 18.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 2 GHz


    Original     		ne3509m14r09ds0011ej0100ne3509m14-t3ne3509m14-t3-a+2marking zrsdars lna PDF

    transistor marking v75 ghz

    Abstract: nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original     		ne3503m04ne3503m04-ane3503m04-t2ne3503m04-t2-a+7ne3503m04-t2bne3503m04-t2b-atransistor marking v75 ghznec microwaveku band super low noise type chs350v75 4pin PDF

    transistor marking v79 ghz

    Abstract: NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2
    Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		ne3508m04ne3508m04-ane3508m04-t2ne3508m04-t2-a+3transistor marking v79 ghzmarking v79hs350 PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		g0706px10020ej41v0pfmobile phone basic block diagrampg2158t5k+82sc3357/ne85634microwave duplexerne5510279aupc8236ne3517s03upg2156ne662m04sw spdt PDF

    m04 SMD

    Abstract: nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
    Contextual Info: www.cel.com NEC Small Signal GaAs FETS Low Noise Devices Typical Specifications @ TA = 25°C Recommended Gate Gate Test NF/GA Bias Frequency Part Length Width Range Frequency VDS IDS NFOPT GA Number µm (µm) (GHz) (GHz) (V) (mA) (dB) (dB) Power Bias Chip /


    Original     		ne27200ne321000ne3210s01ne4210s01+8ne3503m04ne3508m04m04 smdnec smd codene3514ne3512s02ghz micro-x packagene3509m04 PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic PDF