NDS941 Search Results

CBVK741B019

Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9410S
Contextual Info: February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

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Contextual Info: FAIRCHILD February 1996 SEM ICONDUCTO R NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description These N -C hannel en hance m en t Features m o de po w e r field effect • density, D M O S technology. This v e ry high d e n sity process is

Contextual Info: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

NDS9410A

Contextual Info: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: FAIRCHILD SEM IC ONDUCTO R February 1996 tm NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 7.3A, 30V. RDS 0N = 0.028£2 @ VGS = 10V. RDS(0N) = 0.042£2 @ VGS = 4.5V.

NDS9410S

Contextual Info: N February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

NDS9410A

Abstract: 8301A
Contextual Info: February 1996 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

PCTI

Abstract: NDS9410S
Contextual Info: FAIRCHILD s e m ic d n d u c t d r February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement Features mode power field effect transistors are produced using Fairchild's proprietary, high cell

CA500

Abstract: Q506 HDS404E LCD13 HDS404-E LCD20 LCD12 DF13-40DP-1 r637 TXOUT09
Contextual Info: 2 3 4 5 6 VCC3 VCC3 7 8 VCC3_HPA U510 SI4800DY SO8 +12V R637 0/NA 0805 VCC5 VCC3_HPA D R515 100K 0603 G R516 100K 0603 R638 0805 S 1 +12V R640 LCD PANEL TRANSLATION BD CONNECTOR 9 FPVCC Q502 NDS9410 SO8 D Q500 A G DTC144WK D S 2N7002 SOT23_FET C507 0.01U/NA

TX38D85VC1CAA

Abstract: TX38d85 TX38d HT14X11 RP75X4 L509 HT14X11-101
Contextual Info: 1 2 3 4 5 6 7 8 +3V +12V +5V R42 470K 0603 Q3 NDS9410 SO8 D U502 A +5V 24 D/LUMA C526 0.1U/NA 0603B 24 D/CRMA 1B1 1B2 1B3 1B4 1B5 1A1 1A2 1A3 1A4 1A5 2B1 2B2 2B3 2B4 2B5 2A1 2A2 2A3 2A4 2A5 VCC GND 1OE# 2OE# G R45 100K 0603 D S Q5 2N7002 C32 0.22U/NA 0603B

Contextual Info: 6 National April 1995 Semiconductor' NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

MOSFET 830 63 ng

Abstract: nds9410a diode marking code RJ
Contextual Info: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

PCTI

Abstract: NDS9410A
Contextual Info: FAIRCHILD s e m ic d n d u c t d r February 1996 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement Features mode power field effect transistors are produced using Fairchild's proprietary, high cell

NDS9410S

Contextual Info: February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDS9410A

Contextual Info: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: FAIRCHILD February 1997 SEM ICONDUCTO R NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor G eneral Description SO-8 N-Channel enhancement Features mode power field effect • 7.0 A, 30 V. RosfQN, = 0.03 O @ VGS = 10 V. ■ High density cell design for extremely low RDS 0N|.

DSA0030261

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9410A MOSFET 830 63 ng
Contextual Info: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

NDS9410A

Contextual Info: N February 1996 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: NDS9410 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D)5.8 @Temp (øC)70’ IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5’ Minimum Operating Temp (øC)-55

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

18mv

Contextual Info: G FEATURINperature Range July 2000 Tem ommercial Extended C 70˚C to C 0˚ -2 ment dheld Equip an H e bl ta or for P ML4863 High Efficiency Flyback Controller GENERAL DESCRIPTION FEATURES The ML4863 is a flyback controller designed for use in multi-cell battery powered systems such as PDAs and

NP-1A

Abstract: LTC1149 LTC1159 Si4412DY Si4431DY LTC1148 LTC1148L km 8560 UA702 6VVIN18V
Contextual Info: LTC1148 LTC1148-3.3/LTC1148-5 High Efficiency Synchronous Step-Down Switching Regulators U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1148 series is a family of synchronous stepdown switching regulator controllers featuring automatic

LT1148

Contextual Info: LTC1148 LTC1148-3.3/LTC1148-5 High Efficiency Synchronous Step-Down Switching Regulators FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1148 series is a family of synchronous stepdown switching regulator controllers featuring automatic