NDS061 Search Results
NDS061 Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NDS0610 | Fairchild Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 301.87KB | 5 | ||
| NDS0610 | Fairchild Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 121.26KB | 6 | ||
| NDS0610 | Fairchild Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 141.37KB | 5 | ||
| NDS0610 | Fairchild Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 561.1KB | 13 | ||
| NDS0610 | National Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 73.97KB | 5 | ||
| NDS0610 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| NDS0610 | National Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Scan | 378.25KB | 7 | ||
| NDS0610-G | onsemi | FET -60V 10.0 MOHM SOT23 | Original | 468.58KB | 6 | ||
| NDS0610_NL | Fairchild Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 141.37KB | 5 |
NDS061 Price and Stock
onsemi NDS0610Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDS0610 | 30,000 | 750 |
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| NDS0610 | 15,000 | 3,093 |
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| NDS0610 | 12,000 | 3,093 |
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| NDS0610 | 6,000 | 3,000 |
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NDS0610 | Ammo Pack | 1 |
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| NDS0610 | Tape & Reel | 3,000 |
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NDS0610 | 11,742 |
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NDS0610 | 12,180 | 65 Weeks | 1 |
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| NDS0610 | 6,000 | 65 Weeks | 3,000 |
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NDS0610 | Cut Tape | 11,111 | 1 |
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| NDS0610 | Tape & Reel | 11,111 | 10 |
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| NDS0610 | Tape & Reel | 3,000 |
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NDS0610 | Bulk | 2 Weeks | 20 |
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NDS0610 | 30,000 |
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NDS0610 | 2,215 | 1 |
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NDS0610 | 7,040 |
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| NDS0610 | 4,172 |
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| NDS0610 | 1,772 |
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| NDS0610 | 276 |
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| NDS0610 | 53 |
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NDS0610 | 27,000 | 1 |
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NDS0610 | 5,488 | 1 |
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NDS0610 | 12,000 |
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NDS0610 | 65 Weeks | 60,000 |
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NDS0610 | 72,000 | 48 Weeks | 3,000 |
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NDS0610 | 49 Weeks | 3,000 |
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NDS0610 | 993,423 |
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NDS0610 | 30,000 |
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onsemi NDS0610-GP-Channel Enhancement Mode Field Effect Transistor 60V 0.12A 10Ohm 3-Pin SOT-23 Surfa - Bulk (Alt: NDS0610-G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDS0610-G | Bulk | 16,667 |
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NDS0610-G | 51,000 | 1 |
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NDS0610-G | 969,423 |
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Fairchild Semiconductor Corporation NDS0610Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDS0610 | 25,635 |
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| NDS0610 | 15,746 | 1 |
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NDS0610 | 11,164 |
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| NDS0610 | 9,456 |
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| NDS0610 | 7,660 |
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| NDS0610 | 2,982 |
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| NDS0610 | 2,233 |
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| NDS0610 | 1,808 |
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| NDS0610 | 1,000 |
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| NDS0610 | 740 |
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| NDS0610 | 424 |
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NDS0610 | 4,730 |
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NDS0610 | 2,463 |
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NDS0610 | 174,690 |
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National Semiconductor Corporation NDS0610TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,120MA I(D),SOT-23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDS0610 | 256 |
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National Semiconductor Corporation NDS0610M5Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDS0610M5 | 72,525 |
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NDS061 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
transistor wd sot-23
Abstract: B5G1 NDF0610 NDS0610
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OCR Scan |
ndf0610nds0610180mabs0il30+3 | |
ISS 98Contextual Info: April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features -0.18 and -0.12A, -60V. RDS ON = 10Ω These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high |
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ndf0610nds0610180maiss 98 | |
NDS0610
Abstract: NDF0610
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ndf0610nds0610180ma | |
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Contextual Info: April 1 9 9 5 FAIRCHILD :m ic d n d u c t o r NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell |
OCR Scan |
ndf0610nds0610180mas0610+1 | |
nos0610
Abstract: NDF0610 NDS0610
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OCR Scan |
ndf0610nds0610180maot-23+1 | |
NDS0610Contextual Info: NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable |
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nds0610120ma | |
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Contextual Info: NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable |
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nds0610120ma | |
NDS0610
Abstract: NDF0610
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ndf0610nds0610180maot-23 | |
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Contextual Info: April 1995 N NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has |
OCR Scan |
ndf0610nds0610180maot-23+1 | |
NDF0610
Abstract: NDS0610
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ndf0610nds0610ot-23 | |
CBVK741B019
Abstract: F63TNR NDF0610 NDS0610 PN2222N
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ndf0610nds0610180macbvk741b019+2 | |
siemens transistor t2
Abstract: NDS0610 NDF0610
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ndf0610nds0610180maot-23+1 | |
ba 3917
Abstract: potentiometer 10 k AD5170BRMZ2.5
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256-positionad517010-leadd04104-0-1/08+3 | |
ad5173brmz10-rl72
Abstract: AD5173BRMZ10-RL7 rdac
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256-positionad5172/ad517310-leadad5173+4 | |
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U665B
Abstract: SCD1U10V2KX-5GP aol14 H5PS5162 0R2J-2-GP ICS9LPRS365YGLFT-GP TPS51125 WPC775L RTM875T-606 si7686
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d45/d46ics9lprs365yglft-gp4j001001--d45+14 | |
G545B1
Abstract: MAX8776 KBC1070-NU PDTA124EU-1-GP 74LVC1G08GW-1-GP 1SS355PT-GP SC470P50V2KX-3GP G546A1 kbc1070 isl6260
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pv-04max8776tps51120ics9lprs355aklft+14 | |
V3V REV-1.1
Abstract: asus C5027 r d5703 X7RA 47N217 C5706 c6005 3VA2 ICS954310BG
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lpc47n217rtl8111bpci--1394r5c832+12 | |
QG82945PM
Abstract: asus R7790 47n217 isl6227caz ISL6262CRZ rtl8111b d5702 C5022 R5538
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lpc47n217rtl8111bpci--1394r5c832+11 | |
schematic diagram crt tv samsung
Abstract: PC821 P-12V-S samsung q45 c52ex schematic Samsung TV led PT137 Samsung R590 Samsung R418 samsung kbc
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csp32/64m9/m10nc7st32m5_hsdl-3602+14 | |
winbond WPCE773
Abstract: g547f2 GAP-CLOSE-PWR WPCE773 jv-71 ISL88731C RT8202A JV71 2204mA BT143
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isl62392ics9lprs365bemc21024fx01+15 | |
BCM5784
Abstract: JV50-TR RT8205A RS880 SCD1U16V2KX-3GP SB710 AMD SB710 tps51125 RS880M ICS9LPRS480BKL
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jv50-tr4fn01667/800mhzrt8205a+12 | |
TPS51125
Abstract: D0214 ENE3310 SRN10KJ-6-GP 88e8071 51125 KB3310 ich9 WINBOND W25X80 sp5 gfx
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4j501tps511259lprs365bklft875n-606-lft+13 | |
WPCE773LA0DG
Abstract: G5285T11U-GP ICS9LPRS365B g31 crb WPCE773LA intel g41 crb Realtek ALC269Q High Definition Audio g41 crb WPCE773LA0DG, ALC269 diode af52
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ics9lprs365b4cq01tps51125emc2103+13 | |
asus
Abstract: 47n217 R7790 C5706 c5701 R5314 ISL6262CRZ ICS954310BGLFT rtl8111b powerload
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lpc47n217rtl8111bpci--1394r5c832+11 | |