NCC EQUIVALENT Search Results

Bussed Resistor Network

Abstract: MIL-R-83401 NCC equivalent
Contextual Info: NCC CALIFORNIA MICRO DEVICES BUSSED RESISTOR NETWORK California Micro Devices’ resistor arrays are the hybrid equivalent to the bussed resistor networks available in surface-mount packages. The resistors are spaced on ten mil centers resulting in reduced real estate. These

MIL-R-83401

Contextual Info: NCC CALIFORNIA MICRO DEVICES BUSSED RESISTOR NETWORK California Micro Devices’ resistor arrays are the hybrid equivalent to the bussed resistor networks available in surface-mount packages. The resistors are spaced on ten mil centers resulting in reduced real estate. These

BUSSED RESISTOR

Abstract: Bussed Resistor Network
Contextual Info: NCC CALIFORNIA MICRO DEVICES BUSSED RESISTOR NETWORK California Micro Devices’ resistor arrays are the hybrid equivalent to the bussed resistor networks available in surfacemount packages. The resistors are spaced on ten mil centers resulting in reduced real estate. These chips are

Saronix xtal Oscillator NCC series

Abstract: Saronix xtal series saronix crystal 1N4148 DS-133 Saronix NTH M/M/0103 ncc
Contextual Info: SaRonix Crystal Clock Oscillator 5V, CMOS, TTL, Low Current Technical Data NCC Series ACTUAL SIZE Description A crystal controlled, low current hybrid oscillator providing precise rise and fall times to drive CMOS and NMOS microprocessors. Compatible with both CMOS

Saronix xtal Oscillator NCC series

Abstract: 1N4148 DS-133 saronix crystal Saronix XTAL OSC NC saronix 85 xtal osc
Contextual Info: SaRonix Crystal Clock Oscillator 5V, CMOS, TTL, Low Current Technical Data NCC Series ACTUAL SIZE Description A crystal controlled, low current hybrid oscillator providing precise rise and fall times to drive CMOS and NMOS microprocessors. Compatible with both CMOS

DTD-Z Series

Abstract: 2A105K capacitor 4.7uf 250v polyester 0.22uf 250v capacitor DTDB1H105KZ DTDD1H106KZ 250v 0.33uf capacitor at40C film capacitor 0.1uf 250v United CHEMI-CON
Contextual Info: DTDZ Series Film Ⅲ Stacked Polyester Ⅲ Small Size Ⅲ Radial Lead Ⅲ General Purpose Ⅲ ‫؀‬105؇C Maximum Temperature FILM - RADIAL LEAD DTDZ Ⅲ Actual Size The DTDZ series are miniature polyester film capacitors available from UCC/NCC. These capacitors

HA-1100

Abstract: ha1100
Contextual Info: DALLAS SEMICONDUCTOR DS1202, DS1202S Serial Tim ekeeping Chip PIN ASSIGNMENT FEATURES • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation NCC xi C 2 7 SCLK • 24 x 8 RAM for scratchpad data storage

5v metal oxide varistor

Contextual Info: MH Series Ⅲ Metal Oxide Varistor Ⅲ Surface Mount Ⅲ Automotive Ⅲ ‫؀‬125؇C Maximum Temperature Actual Size The MH series metal oxide varistors from UCC/NCC are miniature multilayer ceramic chip varistors designed for use as surge protectors in automotive applications. The MH series has a wide operating

MG 811

Abstract: TNR Varistor TNR40MGB22
Contextual Info: MG Series Ⅲ Metal Oxide Varistor Ⅲ Surface Mount Ⅲ General Purpose Ⅲ ‫؀‬125؇C Maximum Temperature Actual Size The MG series metal oxide varistors are the standard general purpose surface mount varistors from UCC/NCC. These varistors have a wide operating temperature range and are ideal for use in low

Tri-State Buffer CMOS

Abstract: NJU6342 NJU6342H NJU6342XC NJU6342XE 780Q
Contextual Info: N J TR I-STATE Series PACKAGE OUTLINE O NJU6342XC NJU6342XE PIN CONFIGURATION/PAD LOCATION 4.0~6.0V 120MHz equivalent 2 1 8 □ □ □ CONT C x t 1 C 2 8 □ V| D 7 unc + D □ 3 4 a 5 NCC 3 6 D V "C 5 D F o. t CHIP/EMP 8 LINE-UP TABLE VERSION 2 BUFFER GENERAL DESCRIPTION

Contextual Info: DS1010 DALLAS SEMICONDUCTOR DS1010 10-Tap Silicon Delay Line FEATURES PIN ASSIGNMENT • All-silicon time delay • 10 taps equally spaced C 1 NcC 2 in • Delays are stable and precise • Leading and trailing edge accuracy ncE 3 TAP 2 [I 4 • Delay tolerance ±5% or ±2 ns, whichever is greater

74LS

Abstract: DS1010 DS1010-50 DS1010-60 DS1010-75 DS1010G DS1010S
Contextual Info: DS1010 DALLAS SEMICONDUCTOR DS1010 10-Tap Silicon Delay Line FEATURES PIN ASSIGNMENT • All-silicon time delay • 10 taps equally spaced C 1 NcC 2 in • Delays are stable and precise • Leading and trailing edge accuracy ncE 3 TAP 2 [I 4 • Delay tolerance ±5% or ±2 ns, whichever is greater

Contextual Info: D S 1000 DALLAS DS1000 5-Tap Silicon Delay Line SEMICONDUCTOR PIN ASSIGNMENT FEATURES • All-silicon time delay IN [ 1 T 7 14 D Vce IN £ 1 NC NCC 2 • 5 taps equally spaced NC[ 2 13 ] • Delays are stable and precise n c[ 12 ] TAP 1 3 TAP 2 £ 4 • Both leading and trailing edge accuracy

Contextual Info: DS1013 DALLAS s e m ic o n d u c to r DS1013 3 -in -1 Silicon Delay Line FEATURES PIN ASSIGNMENT • All-silicon time delay • 3 independent buffered delays • Delay tolerance ±2ns for -10 through -65 Vcc IN 1 E 1 16 3 Vcc NC NCC 2 15 ] NC C 3 14 H NC IN 2 [ I

Contextual Info: 2 MEG x 8 EDO DRAM M IC R O N HRAM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS 28-Pin SOJ (DA-3) Vcc [ 1* DÛ1 [ 2. DQ2¿ 3 003 r 4 DQ4 5 WE# C 6 RAS# C 7 NCC 3 AIO L 9 A0 L 10 A1 C t t A2 12 A3 t 13 Vcc [ 14 MARKING • Voltages

MT4LC2M8E7

Contextual Info: 2 MEG x 8 EDO DRAM l^ lld R O N H P AM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin SOJ (DA-3) 1• Vcc DQ1 c 2 DQ2C 3 □03 £ 4 DQ4C 5 WE# C 6 RAS# C 7 NCC 8 A 10L 9 A0 C 10 A l C 11 A2C 12 A3 13 Vcc 14 MARKING • Voltages

Contextual Info: f f l H A R R IS H S EMICONDUCTOR 1 1 3 9 6 8-Bit, 125MSPS Flash A/D Converter December 1993 Description Features Differential Linearity Error ±0.5 LSB Typ. or Less Integral Linearity Error ±0.5 LSB (Typ.) or Less Built-In Integral Linearity Compensation Circuit

Contextual Info: Advance Information XM20C64S 64K 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • High Speed: t^A = 55 ns • NO! Batteries!! • AUTOSTORE™ NOVRAM —Automatically Stores RAM data to E2PROM upon Power-fail Detection • Open Drain AUTOSTORE Output Pin

Contextual Info: - H Y U N D ft l - • HY57V654020A 4 Banks x 4 M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of

10d01

Contextual Info: -«Y U H D «! > -• HY57V654020 4 Banks x 4 U x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 6 7,108,864-bit CMOS Synchronous DRAM ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of

Contextual Info: SN5491A, SN54LS91, SN7491A, SN74LS91 8-BIT SHIFT REGISTERS M AR CH 1974 - REVISED M AR CH 1988 S N 5 4 9 1 A, S N 5 4 L S 9 1 . . . J P A C K A G E S N 7 4 9 1 A . . . N PACKAG E SN 74LS91 . . . D OR N PACKAG E For applications in: Digital Com puter System s

soic 208 mil

Contextual Info: DS1624 DALLAS SEMICONDUCTOR DS1624 Digital Thermometer and Memory FEATURES PIN ASSIGNMENT • Temperature measurements require no external components 1 QE 2 nr 3 QE 4 SDA O L SCL • Measures temperatures from -55°C to +125°C in 0.03125°C increments. Fahrenheit equivalent is

Contextual Info: 8051 Microcontroller Family Compatible X88257 256K JÜEK 32,768 x 8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION • Multiplexed Address/Data Bus — Direct Interface to Popular 8051 Family • High Performance CMOS — Fast Access Time, 120ns — Low Power

ka 2843

Contextual Info: HY57V56820A L T 32Mx6-bit, 8 K R et, 4Banks, 3.3V DESCRIPTION The HY57V56820A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820A is organized as 4banks of 8,388,608x8.