NC 555 Search Results

Contextual Info: CXD8059Q 1/3 IL00 * C-MOS XY ADDRESS GENERATOR GND VDD (+5V) NC NC NC NC NC NC NC GND VDD (+5V) GND 32 31 30 29 28 27 26 25 24 23 22 21 20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 52 53 54 55 56 57 58 59 60 61 62 63 64 GND 51 50 49 48 47

SIHG16N50C

Contextual Info: SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved 17.6 Qgd (nC) • Trr/Qrr Improved

Contextual Info: SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved 17.6 Qgd (nC) • Trr/Qrr Improved

nc 555

Abstract: nc555 LCHG NC27 DK855
Contextual Info: LCQD NC :555:W :55:W TIRU LCQD NC :565W :565W DC COMPONENTS CO., LTD. R RFDTJGJFR SQFDJBMJSTS TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 :5 Bfi_j_k GFBTURFS / N_l[e ][k_ `hj N[pcfmf I_[l Eckkci[lchg

Contextual Info: FUNCTIONAL BLOCK DIAGRAMS VDD1 1 OSC VISO 15 GNDISO 14 VIA/VOA VIB/VOB 4 13 VIB/VOB RCIN 5 12 NC 11 VSEL GND1 2 VIA/VOA 3 RCSEL 6 ADuM5200/ ADuM5201/ ADuM5202 VE1/NC 7 GND1 8 VE2/NC 9 GNDISO Figure 1. VIB RS-232/RS-422/RS-485 transceivers Industrial field bus isolation

Contextual Info: ADVANCE |U|ICnQN 256K SYNCHRONOUS SRAM 25 6 K X 16/18 S R A M +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES 100-Pin TQFP S A -1 „< <KU ÏUâZoZ oS H âgssïiss!!.« Í Ü > > Ü O iD O < < < < < □d nz nz nz nz nz cr m m nz nz NC NC NC Vcc

X28C010

Abstract: X28C512 X28C513
Contextual Info: X28C512/X28C513 X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM • FEATURES NC 1 32 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 PLCC / LCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 X28C512 NC 2 31 WE A15 3 30 NC

SiHP16N50C

Abstract: ktp12 MJ-38 SIHF16N50C-E3
Contextual Info: SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved

475 16k 105

Abstract: LT10K
Contextual Info: D Molded Unshielded RF Coils IN # D µ UCT H A ±1 NC 0% E Q MI NI MU M TE ST FR EQ UE SR NC F MI Y NI (M MU Hz DC M ) (M R Hz MA ES ) XI IST MU A M NC CU (O E HM R MA RE S) XI NT MU R A M TI (m NG A) ROVE DA SH L I TA R Y PP MI L MI NU MB ER * A DA SH 2890R

LT4K

Abstract: LT10K
Contextual Info: D Molded Unshielded RF Coils # IN D µ UCT H A ± 1 NC 0% E Q MI NI MU M TE ST FR EQ UE SR NC F MI Y (M NI MU Hz ) DC M (M R Hz MA ES ) XI IST MU A NC M CU (O E R HM MA RE S) XI NT MU R M ATI (m NG A) ROVE DA SH L I TA R Y PP MI L MI NU MB ER * A DA SH 2150R

A-1445

Abstract: HT23C128
Contextual Info: HT23C128 CMOS 16K´8-Bit Mask ROM Features • Operating voltage: 2.7V~5.5V · 16384´8-bit of mask ROM · Low power consumption · Mask options: chip enable CE/CE/OE2/OE2 and out- - Operation: 25mA max. VCC=5V put enable OE/OE/NC and OE1/OE1/NC · TTL compatible inputs and outputs

Contextual Info: 64K X 8 EEPROM moi aie MEM864VX-90/12/15 Issue 1.1: October 1991 ADVANCE PRODUCT INFORMATION Sem iconductor in c 524,288 bit CMOS High Speed EEPROM Pin Definition Features NC NC CS2 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Very Fast Access Times of 90/120/150 ns

Contextual Info: 6 4 K x 8 EEPROM MEM864VX-90/12/15 moîaïc Issue 1.2: November 1991 ADVANCE PRODUCT INFORMATION Mosaic Semiconductor me 524,288 bit CMOS High Speed EEPROM Pin Definition Features NC NC CS2 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Very Fast Access Times of 90/120/150 ns

Contextual Info: TMS29F010 131ā072 BY 8ĆBIT FLASH MEMORY SMJS840A − NOVEMBER 1997 − REVISED JUNE 1998 FM PACKAGE TOP VIEW D Single Power Supply D D D D D D A12 A15 A16 NC VCC W NC 4 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 3 2 1 32 31 30 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12

FR4 substrate epoxy dielectric constant 4.6

Abstract: A1BL TPS7133QPWP TPS7133QPWPLE TPS7133Y
Contextual Info: TPS7133QPWP, TPS7133Y MICROPOWER LOW-DROPOUT LDO VOLTAGE REGULATORS SLVS101A- FEBRUARY 1 9 9 5 - REVISED AUGUST 1995 Thermally Enhanced Surface-Mount Package (PWP) PWP PACKAGE (TOP VIEW) High-Current (500-mA) LDO Regulator GND/HEATSINK GND/HEATSINK GND NC

2SB631K

Abstract: 2sb631* transistor Spice Parameter, 2N, Bipolar Transistor MJE-360 nc 555 2SB631K-SPICE
Contextual Info: 2SB631K SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 195.0f NF 1 IKF 555.0m NE 2 NR 1 IKR 75.00m NC 2 IRB 20.00m RE 127.0m XTB XTI 3 VJE 700.0m TF 2n VTF 10 PTF VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm

AM FM TUNER module

Abstract: D3321 D3328 D3318 AM FM TUNER module car LV25200M D3325 D35-28 D32-30 pickup unit sanyo Denki
Contextual Info: Ordering number : ENA0976 LV25200M Bi-CMOS IC Single chip Tuner IC for Car Radio Overview LV25200M is a tuner IC for car radio, which incorporates the AM/FM Tuner, PLL, AM/FM Noise Canceller NC , FM Stereodecoder (MPX) , Multipath-noise Rejection Circuit (MRC) .

Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B

str 6655

Abstract: 7812 str f 6655 MSC 8805 MCM 2128 ST 7812 Oriole la 7812 FIN-01510 komatsu
Contextual Info: 0410T-03/01 2325 Orchard Parkway, San Jose, CA 95131 TEL 408 441-0311, FAX (408) 487-2600 International Distributors and Representatives Argentina Bulgaria Finland CICEM SRL Pringles 1089 DRAGNEVA ELECTRONIC P O Box 23 ACTE NC FINLAND OY Virkatie 10 Buenos Aires 1083

Contextual Info: Ordering number : ENA0976 LV25200M Bi-CMOS IC Single chip Tuner IC for Car Radio http://onsemi.com Overview LV25200M is a tuner IC for car radio, which incorporates the AM/FM Tuner, PLL, AM/FM Noise Canceller NC , FM Stereodecoder (MPX) , Multipath-noise Rejection Circuit (MRC) .

Contextual Info: Si8417DB New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY –12 FEATURES rDS(on) (W) ID (A)a 0.021 @ VGS = –4.5 V –14.5 0.026 @ VGS = –2.5 V –13.0 0.033 @ VGS = –1.8 V –11.5 VDS (V) Qg (Typ) 35 nC D TrenchFETr Power MOSFET

Si8417DB

Abstract: si8417
Contextual Info: Si8417DB New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY –12 FEATURES rDS(on) (W) ID (A)a 0.021 @ VGS = –4.5 V –14.5 0.026 @ VGS = –2.5 V –13.0 0.033 @ VGS = –1.8 V –11.5 VDS (V) Qg (Typ) 35 nC D TrenchFETr Power MOSFET

LN2162C68TR

Contextual Info: Light Emitting Diodes LN2162C68TR Surface Mounting Chip LED GW Bi-Color Type • Lighting Color / Lens Color  Pure Green  Pure Green / Clear  Orange / Clear M Di ain sc te on na tin nc ue e/ d  Absolute Maximum Ratings Ta = 25°C Power dissipation

MIL-STD-750E

Abstract: malaysia 3916 mosfet STRH100N6FSY01 STRH100N st diode marking code TO3
Contextual Info: STRH100N6 N-channel 60 V, 0.012 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened