564J Search Results

Contextual Info: Series 1812 Performance Graphs INDUCTANCE CHANGE vs. TEMPERATURE IMPEDANCE vs. FREQUENCY % CHANGE IN L IMPEDANCE Ohms 1812-104J 1812-103J 10K 1812-564J (560µH) 10 1812-564J 1812-102J 5 1812-103J (10µH) 1812-102J (1.0µH) RF INDUCTORS 100K 1812-104J 1812-471K

k 472j 2500

Abstract: 684j 104j -250
Contextual Info: Unshielded Surface Mount Inductors IN DU CT AN CE µ TO H LE RA NC Q E MI NI MU M TE ST FR EQ UE SR NC F Y MI (M NI Hz MU ) DC M ( R M MA ES Hz XI IST ) MU A * CU M NC RR (OH E MA E MS X. NT (m RA ) A) TI NG NU MB ER * 1812R 1812 DA SH Series RF INDUCTORS

Surface Mount

Abstract: 474J 334J marking 101k
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 6/28/11 11:43 AM Page 26 F R ROVE D R* Unshielded Surface Mount Inductors L MI PP -100M -120M -150M -180M -220M -270M -330M -390M -470M -560M -680M -820M -01* -02* -03* -04* -05* -06* -07* -08* -09* -10* -11* -12*

RM73B2B

Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

M83446

Abstract: 153JS 223js
Contextual Info: L I TA R Y PP ROVE D Micro i Chip Inductors RF INDUCTORS DA SH Military Specifications MIL-PRF-83446/38 Physical Parameters Inches A 0.080 Max. B 0.145 to 0.155 C 0.115 to 0.125 D 0.070 Min. E 0.020 to 0.030 F 0.020 Max. Typ. Millimeters 2.03 Max. 3.68 to 3.94

mrf5s21090

Contextual Info: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19100LR3 and MRF5S19100LSR3 replaced by MRF5S19100HR3 and MRF5S19100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line

Contextual Info: Little Demon Ohmite’s Little Demons are FEATURES small, reliable carbon composi- • Molded insulation for high dielec0.5mm max. 6mm ±.5 tion resistors with exceptional tric strength. strength. They are made tough • Rugged construction. 52.4mm +1.6

Contextual Info: MRF5S19090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

RM73B2B

Abstract: MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3
Contextual Info: MRF5S19130H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

752j

Contextual Info: FR EQ UE NC SR Y M F Hz MI NI MU M DC (M Hz MA RES ) I XI ST MU A M NC CU (O E HM RR MA E S) X. NT (m RA A) TI NG TE ST MI NI MU M Q IN D (µ UCT H) A ± 5 NC % E Surface Mountable Inductors NU MB ER * 5022R 5022 DA SH Series SERIES 5022 PHENOLIC CORE Millimeters

MB 10F

Contextual Info: Mil Standard to Delevan Conversion Chart MS 14046 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 LT10K 128 129 130 131 132 133 134 135 136 137 MS 1537 18130 LT4K -30K 17 090 -32K 18 091 -34K 19 092 -36K 20 093 -38K 21 094 -40K 22 095 -42K 23 096 -44K 24 097 -47K 25 098 -51K 26

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

223j100

Abstract: 105J100 104j100 334J100 684J100 474J100 273J100 103J400 683j100 823j250
Contextual Info: SMC • Metallized polyphenylene sulphide PPS SMD • According to IEC 60384-20 H TYPICAL APPLICATIONS Timing, filtering. Memory capacitor. High stability and accuracy. High temperature use. CONSTRUCTION B 0.5 Polyphenylene sulphide (PPS) film capacitor for surface mounting.

AN1955

Abstract: MRF5S19100HR3 MRF5S19100HSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19100HSR3

102JE

Abstract: 221JE 822je 562JE 565J 110JE 201JE 912JE 472JE 681JE
Contextual Info: Little Demon Ohmite’s Little Demons are FEATURES small, reliable carbon composi- • Molded insulation for high dielec0.5mm max. 6mm ±.5 tion resistors with exceptional tric strength. strength. They are made tough • Rugged construction. 52.4mm +1.6

CDR33BX104AKWS

Abstract: MRF5S19100LR3 MRF5S19100LSR3
Contextual Info: MOTOROLA Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19100LR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to

684J

Abstract: ms16224 M83446/04 183j 226 35K M83446/08 R 226 35k 029 MS 75084 ms16225 19f 104j
Contextual Info: PREVIOUS CURRENT PREVIOUS CURRENT PREVIOUS a ic hn CURRENT c Te MIL STANDARD to Delevan Conversion Chart PREVIOUS CURRENT l N TA RD -24 -25 -26 -27 -28 -29 -30 -31 -32 -33 -34 -35 -36 -37 -38 -39 -40 -41 -42 -43 -44 -45 -46 -47 -48 -49 375 376 377 378 379

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

104j100

Abstract: 105J100 103j100 SMC5.7 102J100 103J400 TR12 SMC5 j35 SMD Marking Code 223J50
Contextual Info: SMC RoHS • Metallized polyphenylene sulphide PPS SMD • According to IEC 60384-20 typical applications Timing, filtering. Memory capacitor. High stability and accuracy. High temperature use. Compliant Construction H 0.5 Polyphenylene sulphide (PPS) film

334j

Abstract: 684j 823j 105j 250 274J marking 333j 1812R
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 8/27/10 3:22 PM Page 25 R -101K -121K -151K -181K -221K -271K -331K -391K -471K -561K -681K -821K 0.10 0.12 0.15 0.18 0.22 0.27 0.33 0.39 0.47 0.56 0.68 0.82 Actual Size Physical Parameters Inches Millimeters A 0.166 to 0.190

222js

Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 7/22/10 10:24 AM Page 10 R F NG TI RA A T m EN UM RR IM E CU X NC MA TA S) S SI HM RE (O M DC MU ) Hz XI (M MA M MU NI ) MI Hz F (M SR Y NC M UE EQ MU NI FR MI ST Q E TE NC RA LE TO H) (µ CE AN CT # DU IN ER

474J100

Abstract: 564J100 104j100 223j100 684j100c31 105J100 SMD CAPACITOR CODES smd Capacitor marking codes 154J100 SMC5.7
Contextual Info: 2002-04-17 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 65-557-00 65-557-18 65-557-26 65-557-34 65-557-42 65-557-59 65-557-67 65-557-75 65-557-83 65-557-91 65-558-09

223js

Abstract: MIL-PRF-83446
Contextual Info: L I TA R Y PP ROVE D DA SH Micro i Chip Inductors # IN DU CT AN CE µ TO H LE RA NC Q E MI NI MU M TE ST FR EQ UE SR NC F MI Y NI (M MU Hz DC ) M R ( M MA ES H z) XI IST M CU UM ANC R E MA RE (OH X. NT MS (m RA ) A) TI NG MI DA SH A MI L 160R 160 NU MB