NATIONAL SEMICONDUCTOR CMOS LOGIC Search Results
NATIONAL SEMICONDUCTOR CMOS LOGIC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
MRMS791B | Murata Manufacturing Co Ltd | Magnetic Sensor | |||
SCC433T-K03-05 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board | |||
SCL3400-D01-004 | Murata Manufacturing Co Ltd | 2-axis (XY) digital inclinometer |
NATIONAL SEMICONDUCTOR CMOS LOGIC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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7S SOT-23-5
Abstract: M57S 7S02 MA05B NC7S02 NC7S02M5 NC7S02M5X w3 SOT-235 ESD protection diodes mark 0J single end diode sot-23 mark pd
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NC7S02 NC7S02 OT-23 1B0-530 7S SOT-23-5 M57S 7S02 MA05B NC7S02M5 NC7S02M5X w3 SOT-235 ESD protection diodes mark 0J single end diode sot-23 mark pd | |
121-373
Abstract: NC7S32 7s32 MA05B NC7S32M5 NC7S32M5X 7S SOT23-5
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NC7S32 NC7S32 121-373 7s32 MA05B NC7S32M5 NC7S32M5X 7S SOT23-5 | |
Contextual Info: National January 1988 Semiconductor MM54HCT34/MM74HCT34 Non-Inverter General Description Features The MM54HCT34/74HCT34 are logic functions fabricated by using advanced silicon-gate CMOS technology which provides the inherent benefits of CMOS - low quiescent |
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MM54HCT34/MM74HCT34 MM54HCT34/74HCT34 DM54LS/74LS | |
7S86
Abstract: NC7S86 MA05B NC7S86M5 NC7S86M5X 121-362
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NC7S86 NC7S86 B1-043-299-2408 7S86 MA05B NC7S86M5 NC7S86M5X 121-362 | |
TL 413
Abstract: 74S SOT23 06140 t2141 7S08 MA05B NC7S08 NC7S08M5 NC7S08M5X T032
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NC7S08 NC7S08 TL 413 74S SOT23 06140 t2141 7S08 MA05B NC7S08M5 NC7S08M5X T032 | |
GAL16V8QS-15LNCContextual Info: November 1993 Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8ju, EECMOS PLDs General Description Features The EECMOS GAL16V8QS devices are fabricated using National’s CS80BEV 0.8/j. Electrically Erasable CMOS pro cess. This advanced process makes National’s |
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GAL16V8QS-10L, 20-Pin GAL16V8QS CS80BEV Cep-01451, GAL16V8QS-15LNC | |
c 5171
Abstract: nsc800 ed68 nsc831 Z80 CPU PHYSICAL DIMENSIONS LCC NSC800-3 NSC800 cpu ED69 TRANSISTOR BC 560 Making ED4A
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NSC800 c 5171 ed68 nsc831 Z80 CPU PHYSICAL DIMENSIONS LCC NSC800-3 NSC800 cpu ED69 TRANSISTOR BC 560 Making ED4A | |
ed68
Abstract: NSC800 c 5171 ED6A NSC800 cpu mm58167 CB2E ed62 ED78 nsc800 family
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NSC800 ed68 c 5171 ED6A NSC800 cpu mm58167 CB2E ed62 ED78 nsc800 family | |
VHC14
Abstract: VHC04 74HC14 74VHC14 74VHC14M 74VHC14MSC 74VHC14MTC 74VHC14SJ M14A M14D
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74VHC14 VHC14 VHC04 bSD1122 74HC14 74VHC14M 74VHC14MSC 74VHC14MTC 74VHC14SJ M14A M14D | |
Contextual Info: MM54HC132/MM74HC132 PRELIMINARY National Semiconductor MM54HC132/MM74HC132 Quad 2-Input NAND Schmitt Trigger General Description Features The MM54HC132/MM74HC132 utilizes advanced silicongate CMOS technology to achieve the low power dissipation and high noise immunity of standard CMOS, as well as the |
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MM54HC132/MM74HC132 MM54HC132/MM74HC132 54HC/74HC 54LS/74LS | |
5252 f 1110
Abstract: GTLP16612 GTLP16612MEA GTLP16612MTD MTD56
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GTLP16612 18-Bit GTLP16612 TL/F/12390-8 TL/F/12390-9 b5D1122 5252 f 1110 GTLP16612MEA GTLP16612MTD MTD56 | |
LMC555
Abstract: 555 cmos timer LMC555CN LMC555I tl 4226 LMC555CM application note AN-450 H08C LMC555CH LMC555CM
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LMC555 TL/H/8669-5 LMC555 TL/H/866Sâ 555 cmos timer LMC555CN LMC555I tl 4226 LMC555CM application note AN-450 H08C LMC555CH LMC555CM | |
Contextual Info: U04 National Semiconductor 74VHCU04 Hex Inverter General Description Features The 74VHCU04 is an advanced high speed CMOS INVERT ER fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bi polar Schottky TTL while maintaining the CMOS low power |
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74VHCU04 74VHCU04 74VHC bS0112P 00A3L10 | |
Contextual Info: National January 1988 Semiconductor MM54HC03/MM74HC03 Quad 2-Input Open Drain NAND Gate General Description Features These NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS |
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MM54HC03/MM74HC03 54HC/74HC 54LS/74LS | |
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COOA
Abstract: sot-23-5 5R lmc6762 LMC7211BIM5 marking AOO sot23-5 pickup soh sot23 marking SK LMC7211 LMC7211AIM LMC7211AIMX
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LMC7211 LMC7211 OT23-5 b5D1124 OT-23-5 hSD112H COOA sot-23-5 5R lmc6762 LMC7211BIM5 marking AOO sot23-5 pickup soh sot23 marking SK LMC7211AIM LMC7211AIMX | |
rta stepper
Abstract: J28A NMC98C64
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NMC98C64 NMC98C64 rta stepper J28A | |
VHC32
Abstract: 74HC32 74VHC32 74VHC32M 74VHC32MSC 74VHC32MTC 74VHC32SJ M14A M14D MTC14
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74VHC32 VHC32 74VHC b501122 00fl3b23 74HC32 74VHC32M 74VHC32MSC 74VHC32MTC 74VHC32SJ M14A M14D MTC14 | |
NC7504M5
Abstract: NC7S04 LOA SOT23 7S04 MA05B NC7S04M5 NC7S04M5X
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NC7S04 NC7504M5 LOA SOT23 7S04 MA05B NC7S04M5 NC7S04M5X | |
Contextual Info: January 1997 Semiconductor NC7S04 Tiny Inverter General Description Features The NC7S04 is a single high performance CMOS Inverter in National’s TinyPak package. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad Vcc range, ESD protection diodes |
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NC7S04 NC7S04 737-701S | |
GAL20Vb
Abstract: GAL20V8QS-15L
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GAL20V8QS GAL20V8QS 24-Pin GAL20V8QS; 28-lead GAL20Vb GAL20V8QS-15L | |
BLKCON.100
Abstract: BLKCON.100/VH/TM1SQ/W.100/2 wv4 zener ADC128S102CVAL ADC128S102QML TP10 wv4 sot23 24c02 eeprom DIP100
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12-bit ADC128S102CVAL 50KSPS BLKCON.100 BLKCON.100/VH/TM1SQ/W.100/2 wv4 zener ADC128S102CVAL ADC128S102QML TP10 wv4 sot23 24c02 eeprom DIP100 | |
BLKCON.100
Abstract: BLKCON.100/VH/TM1SQ/W.100/3 BLKCON.100/VH/TM2OE/W.200 BLKCON BLKCON.100/VH/TM1SQ/W.100/2 wv4 zener 5011K-ND ADC128S102CVAL 1N4001 ADC128S102QML
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12-bit ADC128S102CVAL 50KSPS BLKCON.100 BLKCON.100/VH/TM1SQ/W.100/3 BLKCON.100/VH/TM2OE/W.200 BLKCON BLKCON.100/VH/TM1SQ/W.100/2 wv4 zener 5011K-ND ADC128S102CVAL 1N4001 ADC128S102QML | |
Contextual Info: GAL20RA10-15, -20, -25 PRELIMINARY National Semiconductor GAL20RA10-15, -20, -25 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per formance CMOS process with electrically erasable floating gate technology. This programmable memory technology |
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GAL20RA10-15, GAL20RA10 TL/L/10775-9 GAL20R10 TL/L/10775-17 | |
GAL16VB
Abstract: National SEMICONDUCTOR GAL16V8 GAL16V8 application notes GAL16v8 algorithm
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GAL16V8 GAL16V8 ns-35 emula/9344-36 TL/L/9344-19 GAL16VB National SEMICONDUCTOR GAL16V8 GAL16V8 application notes GAL16v8 algorithm |