NAND FLASH 128MBIT Search Results

NAND512-A2C

Abstract: NAND512A2C NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface

K9F1208B0B

Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
Contextual Info: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.

Contextual Info: K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.

K9K1G08U0B

Contextual Info: K9K1G08R0B K9K1G08B0B K9K1G08U0B Preliminary FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.

HY27US08281A

Abstract: hynix nand 4G HY27US16281A hy27us08281 16Mx8 flash 8m*16bit hynix nand flash 128mb HY27US hynix nand 8MX16BIT flash
Contextual Info: HY27US 08/16 281A Series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Document Title 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory Revision History Revision No. History 0.0 Initial Draft. 0.1 1) Correct Summary description & page.7 - The Cache feature is deleted in summary description.

sram 2112

Abstract: nand flash st nand flash application note ubda KS32C50100 RAM 2112 256 word AN1817 NAND128R3A NAND128R4A NAND128W3A
Contextual Info: AN1817 APPLICATION NOTE How to Connect a Single Level Cell NAND Flash Memory to a Generic SRAM Controller This Application Note describes how to connect an STMicroelectronics NAND Flash memory with a microcontroller that does not have an embedded NAND controller, using a glue-less interface.

NAND512W3A2C

Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications

SAMSUNG MCP

Abstract: MCP NAND
Contextual Info: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die

AI09

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

TRUEFFS

Abstract: footprint-48-pin Disk on chip 16MB Diskonchip diskonchip g4 TSOP 44 nand Flash
Contextual Info: ADVANCE INFORMATION Am72LVB016 16 MB Disk-on-Chip Flash Memory and Disk Controller DISTINCTIVE CHARACTERISTICS • General — Flash Disk—full hard disk emulation — 16Mbyte 128Mbit capacity — Single-chip, based on state-of-the-art NAND flash technology

samsung evaluator 7t

Abstract: RS-486 Header 19x2 AN1758 NAND128R3A NAND128R4A NAND128W3A NAND128W4A schematics nand flash controller NAND256R4A
Contextual Info: AN1758 APPLICATION NOTE How to Connect a Small Page NAND Flash Memory to an ARM7TDMI Core Based Microcontroller This Application Note describes how to drive an STMicroelectronics Small Page 528 Byte/264 Word Page NAND Flash memory with an ARM7TDMI core based microcontroller that does not have an embedded NAND controller. It considers both the hardware and software, which have been evaluated on the

WSOP48

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 NAND01GR
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

AN1728

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A
Contextual Info: AN1728 APPLICATION NOTE How to Use the Copy Back Feature of ST Small Page NAND Flash Memories CONTENTS • DESCRIPTION ■ WHEN TO USE A COPY BACK PROGRAM OPERATION ■ PSEUDO CODE ■ CONCLUSION ■ REFERENCES ■ REVISION HISTORY December 2005 ST Small Page NAND Flash memories feature a Copy Back

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

STMicroelectronics NAND256W3A

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

USOP48

Abstract: NAND512-A STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 SLC ball 128 mcp IBIS Models TSOP48 outline NAND01G-A NAND128-A NAND128W3A
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area

MD2811-D32-V3

Abstract: TRUEFFS MD-2811-D32-V3 MD2811-D16-V3Q18 MD2811-D32V3 MD2811-D32 MD3831-D16-V3Q18 TC58C256AFT TC58C1287AXB TC58C128AFT
Contextual Info: TC58C128AFT / TC58C128AFTI /TC58C1287AXB TC58C256AFT/ TC58C256AFTI/ TC58C256AXB TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE MOS 128-MBIT, 256-MBIT CMOS NAND E2PROM with Flash Controller Flash Disk with Protection and Security-Enabling Features

SAMSUNG MCP

Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
Contextual Info: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0

SAMSUNG K9F1208U0B

Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
Contextual Info: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

SAMSUNG MCP

Abstract: MCP MEMORY MCP 256M nand 128M mobile sdram UtRAM Density samsung nor nand ddr mcp samsung mcp ka Kal00 nand sdram mcp
Contextual Info: Preliminary MCP MEMORY KAL00B00BM-FGV X V(X) Document Title Multi-Chip Package MEMORY 256M Bit (16Mx16) Nand Flash / 128M Bit (4Mx8x4Banks) Mobile SDRAM*2 Revision History Revision No. History 0.0 0.1 Draft Date Remark Initial draft. - 256Mb NAND C-Die_Ver 2.6

K5D1258

Abstract: k5d12 SAMSUNG MCP
Contextual Info: Target MCP MEMORY K5D1258KCM-D075 Document Title Multi-Chip Package MEMORY 512M Bit 64Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date Initial issue. - 512Mb NAND B-Die_ Ver 0.1 - 256Mb Mobile SDRAM F-Die_Ver 1.1 March 10, 2005

blocks in memory organization

Abstract: 32Mx16-bit
Contextual Info: K9F1216U0A K9F1208U0A FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. Apr. 25th 2002 0.1 TBGA K9F12XXX0A-DCB0/DIB0 size information is changed.

KBB0XA300M

Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
Contextual Info: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary

Contextual Info: K9F1208Q0A-DCB0,DIB0 K9F1208U0A-YCB0,YIB0 K9F1208U0A-DCB0,DIB0 K9F1216Q0A-DCB0,DIB0 K9F1216U0A-YCB0,YIB0 K9F1216U0A-DCB0,DIB0 Preliminary K9F1208U0A-VCB0,VIB0 FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History