N7 TRANSISTOR Search Results

RS468

Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
Contextual Info: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive

2SC4849

Contextual Info: h7 /'Transistors 2SC4849 2SC4849 1 1°$ * y 7 & 7V - 1M NPN v >J n > N7 > y 2 S Epitaxial Planar NPN Silicon Transistor X < y -?•> “i? b =£' a lx — £ /Switching Regulator • ^ j i / D i m e n s i o n s U n it: mm tf= 0 .1 8 (Typ.) ( lc = 5 A )

2sa154

Abstract: 251C 2SA1547 2SA937M 2SC2021M 2SC401
Contextual Info: ROHM CO L T D T a s a ^ MGE D . 4 HIRHM 2SA937M/2SA1547 ^ 7, $ / T r a n s is t o r s N7 Q0 GS M27 ' 7 ^ 2 7 - 0 9 2 S A 1 5 4 7 ~ ^ / N f ^ ii,fiffl/General Smal1 S|9na| AmpEpitaxial Planar PNP Silicon Transistors •¿l-Jfi'tf& SI/D lm e n sio n s U n it:m

Contextual Info: ROHM CO L T D N7 " 4QE D • □□□SbSb /Transistors — '“ 2SB1334 “ ¿ g T ■RHM — — — 7^ 5 3 - / 9 î £ ° $ * y 7 J l ' 7 ° U - t & P N P y lJ 3 > b ÿ > y Z $ Mffl'tâWJjtmtymM/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor

2SD1763

Abstract: 2Sb1186 2SD1763 transistor
Contextual Info: 7-, £ / T ransistors h -7 > v 2SD1763 m X t° $ * V 7 U NPN y >J□ > N7 > y 7 $ Epitaxial Planar NPN Silicon Transistor flU§>JfcS^^1iffl/LowFreq. Power Amp. 2SD1763 • • w* 1 rfjiE l/D im e n s io n s U n it: mm) ¡IitH T St>-S o B V ce o= 120 V <M i tO. I

brake rectifier motor

Abstract: dc chopper circuit ANS5 diode x18
Contextual Info: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V A4 D D1 1200 1600 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D3 D5 N7 T D2 D4 D6 X18 L9

brake rectifier motor

Abstract: DIODE N7
Contextual Info: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V VUB 50 A4 D D1 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D5 N7 T D2 D4 D6 X18 L9 R9 Features

PSDI 50

Abstract: Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode
Contextual Info: ECO-PAC TM 2 Three Phase Rectifier Bridge PSDI 50/12 VRRM IdAVM with IGBT and Fast Recovery Diode for Braking System in ECO-PACTM 2 = 1200 V = 56 A Preliminary Data Sheet V16 K1 ~ D1 ~ G1 ~ D1 D3 D5 A4 N7 D1 T L9 D2 D4 D6 X18 R9 Input Rectifier D1 – D6 Symbol

Contextual Info: ROHM CO LT D 40E D B T ô a û T ïT 0D0Sfc.03 K ÿ > y X £ /Transistors 1 BIR HM 2SB1291 7 -3 3 -/7 1 1 ° £ * V 7 ^ 7 ° U - * pNP y 'J □ > N7 > y * ^ '®:üM®^JiHllIlÆ /L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 2 • ÿ fffÎ^ jÈ lS /D im e n sio n s Unit: mm

Contextual Info: ROHM CO LTD N7 > V 4DE D 000SA04 8 E3RHM $ / T ransistors 2SC3969 7 - 2 1 . - 0 ¡3 S H M i £ i & 7 ° U - ^ N y 3-> P N y ' j 3 > h 7 > y 7 J $ raiSiJE^ < “^ ffl/High Voltage Switching Triple Diffused Planar NPN Silicon Transistor • W fi\f';i|3 ]/'D in ie n s io n s U n it: mm

d1758

Contextual Info: ROHM CO L T » N7 > vT , L<0E D $/J ransistors P 5 Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors W ë ’tfiâ lll/ D im e n s io n s Unit : mm « f t 1) V ce o = 3 2 V, Ic m a x = 2 A, P c m a x= 1 O W O iH J f l £ 2) 2S B 1 1 8 2 i : a V j V v J iT

2SC3080M

Abstract: 2SC4014
Contextual Info: ROHM CO MQE LTD /'Transistors 2 S C 3 g 2 S C 4 1 4 m D 7 0 2 0 ^ 000S751 2 HRHM 2SC3080M/2SC4014 7^31-17 x tf 2 * y 7 ; u 7° u —1-m N P N V U H > N7 > y ^ £ iS J is f t iiiif f l / R F Amplifier Epitaxial Planar NPN Silicon Transistors • ÿf-jfé’t f & H / D im e n s io n s Unit : mm

n7 transistor

Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

n7 transistor

Abstract: LDTC113ZET1G SC-89 N7110
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC113ZET1G Applications Inverter, Interface, Driver • Features 1 Built-in bias resistors enable the configuration of an

LDTC113ZET1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC113ZET1G S-LDTC113ZET1G • Applications Inverter, Interface, Driver • Features 1 Built-in bias resistors enable the configuration of an

n7 transistor

Abstract: sot 323 marking code n7 marking N7 LDTC113ZWT1G sot323 marking n7
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC113ZWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

SOT23 W1P

Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23

9893 f

Abstract: LM2904AWYPT
Contextual Info: LM2904W, LM2904AW Low power dual operational amplifier Datasheet — production data Features • Frequency compensation implemented internally ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current/op (500 µA per

VVQ4000-50B-C8

Abstract: SMC - SY5120 SY3120-5LOU-C6-Q jst connector JST p-2 58A03 SY3140-5LOU-Q SY5120-L-C6 DIN43650C 664AB JISC0704
Contextual Info: CAT.EUS11-83 B -UK 5 Port Solenoid Valve Power Consumption With Power Saving Circuit SY Series Improved pilot valve Pilot valve cover is stronger using stainless steel. Mounting thread is also reinforced from size M1.7 to M2.  Flow Characteristics Series

smd transistor marking n9

Abstract: smd transistor marking n5 2PB709ARW smd transistor n9 02 N5 MARKING SMD PNP TRANSISTOR 2PB709AQW 2PB709ASW 2PB709AW N5 smd transistor N5
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor 2PB709AW Features High collector current max. 100 mA . Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

DAC-08

Contextual Info: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

pmi dac08

Abstract: DAC08
Contextual Info: A N A L O G . E Ü D E V I C E S / P M I D I V S b E D • O ô l b f l O S MAT-03 0 Q G T 3 4 Ö 1 ■ LOW NOISE, MATCHED, _ DUAL PNP TRANSISTOR P r e c ip it in M o i i o l i t h i c s h ic . FEATURES • • • • • • • • Dual Matched PNP Transistor