N7 TRANSISTOR Search Results

2sa154

Abstract: 251C 2SA1547 2SA937M 2SC2021M 2SC401
Contextual Info: ROHM CO L T D T a s a ^ MGE D . 4 HIRHM 2SA937M/2SA1547 ^ 7, $ / T r a n s is t o r s N7 Q0 GS M27 ' 7 ^ 2 7 - 0 9 2 S A 1 5 4 7 ~ ^ / N f ^ ii,fiffl/General Smal1 S|9na| AmpEpitaxial Planar PNP Silicon Transistors •¿l-Jfi'tf& SI/D lm e n sio n s U n it:m

Contextual Info: ROHM CO L T D N7 " 4QE D • □□□SbSb /Transistors — '“ 2SB1334 “ ¿ g T ■RHM — — — 7^ 5 3 - / 9 î £ ° $ * y 7 J l ' 7 ° U - t & P N P y lJ 3 > b ÿ > y Z $ Mffl'tâWJjtmtymM/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor

brake rectifier motor

Abstract: dc chopper circuit ANS5 diode x18
Contextual Info: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V A4 D D1 1200 1600 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D3 D5 N7 T D2 D4 D6 X18 L9

Contextual Info: ROHM CO LT D 40E D B T ô a û T ïT 0D0Sfc.03 K ÿ > y X £ /Transistors 1 BIR HM 2SB1291 7 -3 3 -/7 1 1 ° £ * V 7 ^ 7 ° U - * pNP y 'J □ > N7 > y * ^ '®:üM®^JiHllIlÆ /L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 2 • ÿ fffÎ^ jÈ lS /D im e n sio n s Unit: mm

Contextual Info: ROHM CO LTD N7 > V 4DE D 000SA04 8 E3RHM $ / T ransistors 2SC3969 7 - 2 1 . - 0 ¡3 S H M i £ i & 7 ° U - ^ N y 3-> P N y ' j 3 > h 7 > y 7 J $ raiSiJE^ < “^ ffl/High Voltage Switching Triple Diffused Planar NPN Silicon Transistor • W fi\f';i|3 ]/'D in ie n s io n s U n it: mm

d1758

Contextual Info: ROHM CO L T » N7 > vT , L<0E D $/J ransistors P 5 Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors W ë ’tfiâ lll/ D im e n s io n s Unit : mm « f t 1) V ce o = 3 2 V, Ic m a x = 2 A, P c m a x= 1 O W O iH J f l £ 2) 2S B 1 1 8 2 i : a V j V v J iT

2SC3080M

Abstract: 2SC4014
Contextual Info: ROHM CO MQE LTD /'Transistors 2 S C 3 g 2 S C 4 1 4 m D 7 0 2 0 ^ 000S751 2 HRHM 2SC3080M/2SC4014 7^31-17 x tf 2 * y 7 ; u 7° u —1-m N P N V U H > N7 > y ^ £ iS J is f t iiiif f l / R F Amplifier Epitaxial Planar NPN Silicon Transistors • ÿf-jfé’t f & H / D im e n s io n s Unit : mm

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

n7 transistor

Abstract: LDTC113ZET1G SC-89 N7110
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC113ZET1G Applications Inverter, Interface, Driver • Features 1 Built-in bias resistors enable the configuration of an

n7 transistor

Abstract: sot 323 marking code n7 marking N7 LDTC113ZWT1G sot323 marking n7
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC113ZWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

smd transistor marking n9

Abstract: smd transistor marking n5 2PB709ARW smd transistor n9 02 N5 MARKING SMD PNP TRANSISTOR 2PB709AQW 2PB709ASW 2PB709AW N5 smd transistor N5
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor 2PB709AW Features High collector current max. 100 mA . Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

DAC-08

Contextual Info: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

MSD602

Abstract: 1N711
Contextual Info: NPN General Purpose Amplifier Transistor Surface Mount MSD602–RT1 COLLECTOR 3 3 1 2 2 BASE 1 EMITTER Symbol V BR CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 500 Unit Vdc Vdc Vdc mAdc IC(P) 1.0 Adc Symbol PD TJ T stg Max 200 150 –55 ~ +150 Unit mW °C °C

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

pj 89 diode

Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Contextual Info: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­

smd transistor marking n5

Abstract: smd transistor n6 N5 smd transistor N5 N6 SMD Transistor MARKING SMD TRANSISTOR sot-23 Marking N5 N5 npn transistor pd smd 2SC1654 N7200
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1654 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 High voltage VCEO : 160V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ. VCE=3.0V,IC=15mA 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

2SC1654

Abstract: N5 npn transistor n7 transistor 2SC1654N5 marking n5 amplifier sot-23 Marking N5 marking n6 2SC1654N7 amplifier marking code n6 marking n6 transistor
Contextual Info: 2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE   High Frequency Power Amplifier Application Power Switching Applications A L 3 3

micrologix 1100 error codes

Abstract: 1763-nc01 pinout micrologix 1100 fault codes micrologix 1100 error code 0020 1763-L16BWA Micrologix 1100 solid red fault 1763-UM001E-EN-P 1762-OB16 1747-IN063 AB micrologix 1500 LSP series B
Contextual Info: MicroLogix 1100 Programmable Controllers Bulletin 1763 Controllers and 1762 Expansion I/O User Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. Safety Guidelines for the Application, Installation and

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

transistor 22E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KRC416E-KRC422E EPITAXIAL PLANAR NPN TRANSISTOR SW IT C H IN G APPLICATION. INTERFA CE C IRCUIT A N D DRIVER CIR CUIT AP PLICATION FE A T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

sot-23 N9

Abstract: N4 SOT23 MARK N2 SOT-23 Marking N8 sot-23 Marking N2 SOT23 n9 marking N8 sot-23
Contextual Info: ࡒᔜྯ૵਌ Resistive Transistors Resistive Transistors ࡒᔜྯ૵਌ NPN Silicon FHRC116～FHRC122 DESCRIPTION & FEATURES 概述及特点 With Built-in Bias Resistors 内部基极带阻 Simplify Circuit Design 简单的回路设计 Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: S "7 > ' J 7*$ / I ransistors DTC114YU/DTC114YK/DTC114YS/DTC114YF DTC114YL/DTC114YA/DTC114YV D TC 114 Y U /D T C 1 14 Y K /D T C 1 14 Y S D T C 1 14 Y F/D T C 1 14 Y L/D T C 1 14YA D TC 114YV -?'/JJl-hyxyX ? I' v >y ^ / T ransistor Switch Digital Transistors Includes Resistors

KRC668U

Contextual Info: SEM ICO NDUCTO R KRC666U-KRC672U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: 2SD2571 TO SHIBA 2SD2571 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS s 10 ± 0 .3 • High DC Current Gain : hpE = 2000 Min. (VCE = 2V, IC = 1A) Low Saturation Voltage : V C E (sat) = l-5V (Max.) (IC = 1A)