N4937 Search Results

Contextual Info: 1N4933/L - 1 N4937/L 1.0A FAST RECOVERY RECTIFIERS Features Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material - UL Flammability

Contextual Info: S E M IC O N D U C TO R tm 1N4933GP - 1 N4937GP 1.0 min 25.4 Features • Low forw ard voltage drop. Dimensions in inches (mm) • High surge current capability 0.205 (5.21) 0.160 (4.06) • High reliability. • 0.107 {2 .12 ) 0.080 (2.03) DO-41 High current capability.

1N4933

Abstract: 1N4934 1N4935 1N4936 1N4937 A-405
Contextual Info: 1N4933G/L - 1 N4937G/L VISHAY 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER y LITEMZI POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak

Contextual Info: S E M IC O N D U C TO R tm 1N4933GP - 1 N4937GP 1.0 min Features 25 .4 • Low forw a rd voltage drop. Dimensions in niches (mm) • High surge current capability. 0.205 (5.21) 0.160 (4.06) • High reliability. • 0.107 (2.72) 0.080 (2.03) High current capability.

N4937

Contextual Info: 1 N 4933.1 N4937 Schnelle Silizium Gleichrichter Fast Silicon Rectifier 1A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 600 V Plastic case Kunststoffgehäuse - DO-41 Weight approx. Gewicht ca. ¿ 0.8 0.4 g

Contextual Info: 1N4933G/L - 1 N4937G/L 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammability

1N4933

Abstract: 1N4934 1N4935 1N4936 1N4937 A-405
Contextual Info: 1N4933G/L - 1 N4937G/L 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammability

1N4933

Abstract: 1N4934 1N4935 1N4936 1N4937
Contextual Info: JGD c :> 1N4933 THRU 1 N4937 .0 AMP. GLASS PASSIVATED FAST RECOVERY RECTIFIERS VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Amperes DO-41 FEATURES T * Low forward voltage drop * High current capability .107 2.7 .080(2.0) DIA. * High reliability 1.0(25.4) MIN.

Contextual Info: JGD 1 N4933G THRU 1 N4937G O 1 .0 AMP. FAST RECOVERY RECTIFIERS VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Amperes DO-41 FEATURES T * Low forward voltage drop * High current capability .107 2.7 .080(2.0) * High reliability 1.0(25.4) MIN. DIA. *l4igh surge current capability

1002C

Abstract: 1N4933GP 1N4937GP N4933G
Contextual Info: S E M IC O N D U C T O R tm 1N4933GP - 1 N4937GP 1.0 m in Features 25.4 D im e n sio n s in • Low forw ard voltage drop. in ch es (m m ) • High surge current capability 0.205 0.160 (5.21) (4.06) 0.107 0.080 (2.72) (2.03) 0.034 0.028 (0.86) (0.71) • High reliability.

N493

Abstract: A-405
Contextual Info: 3SKÊ 1N4933/L - 1 N4937/L 1.0A FAST RECOVERY RECTIFIERS /LI T E M I 17I / POWERSEMICONDUCTOR Features Diffused Junction Fast Sw itching for High Efficiency High C urrent C apability and Low Forward Voltage Drop Surge O verload Rating to 30A Peak Low Reverse Leakage C urrent

Siemens Ni1000 temperature sensor

Abstract: n531 QAC22 N9292 LG-Ni1000 QFM3100 triac BT 317 DATASHEET
Contextual Info: System Catalog 2014 The information in this document contains general descriptions of technical options available, which do not always have to be present in individual cases. The required features should therefore be specified in each individual case at the time of closing the contract.

N4934

Abstract: N4935 N4937 N4936
Contextual Info: 1N4933/L-N4937/L Vishay Lite-On Power Semiconductor 1 .OA Fast Recovery Rectifier Features • Diffused junction • Fast sw itching fo r high efficiency • High current capability and low forw ard voltage drop • Surge overload rating to 3 0A peak •

N4935G

Contextual Info: 1N4933G/L-N4937G/L Vishay Lite-On Power Semiconductor 1.0A Fast Recovery Glass Passivated Rectifier Features • Glass passivated die construction • Diffused Junction • Fast switching for high efficiency • High current capability and low forward voltage

Contextual Info: • Micnosemi m m Chatsworth, CA a 1N4933 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • th ru N4937 1 Amp Fast Recovery Rectifier 50 - 600 Volts Low Leakage Current Metalurgically Bended Construction

N4937

Contextual Info: :m ic q n d u c to r T m 1N4933 - N4937 Features 1.0 m in • Low forw a rd voltage drop. 25.4 • High surge current capability. Dimensions in inches (mm) • High reliability. 0.205 (5.21) 0.160 (4.06) • High current capability. COLOR BAND DENOTES CATHODE

uc3802

Abstract: 12vdc power supply with uc3842 Andreycak of ic uc3842 zener diodes 13.5v uc3842 power factor UC3842 Volt Regulated power
Contextual Info: DN-65 U IM IT R O D E Design Note Considerations in Powering BiCMOS ICs by Jack Palczynski Bipolar linear integrated circuits have been with us for years in the form of PW M and PFC con­ trollers, supervisory circuits and others. Since these devices have traditionally been built using

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

2N3816

Abstract: n4938 2N3815 N4937 TO-89 NPN
Contextual Info: Maximum Ratings T racking Electrical Characteristics @ 25°C One Side Matching VQ£i(Sat) @ Geometry & Character­ ization Applicable Letter m A/m A h FE % V BE in mV A V Be AT -55°C to + 125°C in mV/°C 0.20 0.1/0.01 10 3 10 100 TO-78 G 0.01 0.20 0.1/0.01