N4 TRANSISTOR Search Results

DRCF123J

Abstract: drcf123
Contextual Info: DRCF123J Tentative Total pages page DRCF123J Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

V 904 RL 805

Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures

Contextual Info: TOSHIBA 2SC4844 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4844 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2= 9.5dB f=2GHz 2.1 ± 0.1 1.25 ± 0.1 n4 MAXIMUM RATINGS (Ta = 25°C)

equivalent transistor TT 3043

Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
Contextual Info: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1

DRCF114Y

Contextual Info: DRCF114Y Tentative Total pages page DRCF114Y Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRCF143E

Contextual Info: DRCF143E Tentative Total pages page DRCF143E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRAF124E

Contextual Info: DRAF124E Tentative Total pages page DRAF124E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LE Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRAF114Y

Contextual Info: DRAF114Y Tentative Total pages page DRAF114Y Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRCF144E

Contextual Info: DRCF144E Tentative Total pages page DRCF144E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DSCF001

Contextual Info: Tentative DSCF001 Total pages page DSCF001 Silicon NPN epitaxial planar type For general amplification Marking Symbol : C1 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

TLP721

Abstract: TLP721F 11-5B2 E67349 VDE0884 74285
Contextual Info: TOSHIBA TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY "n4 n33 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic

DRCF114W

Contextual Info: DRCF114W Tentative Total pages page DRCF114W Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N9 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRCF113Z

Contextual Info: DRCF113Z Tentative Total pages page DRCF113Z Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N1 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DSAFG01

Contextual Info: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

iw 1688

Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
Contextual Info: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency

DRCF143T

Contextual Info: DRCF143T Tentative Total pages page DRCF143T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRCF114E

Abstract: drcf114
Contextual Info: DRCF114E Tentative Total pages page DRCF114E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NB Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRAF143Z

Contextual Info: DRAF143Z Tentative Total pages page DRAF143Z Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L8 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRCF124T

Contextual Info: DRCF124T Tentative Total pages page DRCF124T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NH Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRAF123J

Abstract: draf123
Contextual Info: DRAF123J Tentative Total pages page DRAF123J Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRAF143T

Contextual Info: DRAF143T Tentative Total pages page DRAF143T Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRCF124E

Contextual Info: DRCF124E Tentative Total pages page DRCF124E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NE Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRAF144E

Contextual Info: DRAF144E Tentative Total pages page DRAF144E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRCF152Z

Contextual Info: DRCF152Z Tentative Total pages page DRCF152Z Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N0 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)