N4 TRANSISTOR Search Results

V 904 RL 805

Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures

equivalent transistor TT 3043

Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
Contextual Info: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1

TLP721

Abstract: TLP721F 11-5B2 E67349 VDE0884 74285
Contextual Info: TOSHIBA TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY "n4 n33 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic

BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure

Contextual Info: Photo Transistor Product No: M TD8 0 0 0 N4 -T Peak Sensitivity Wavelength: 880nm The MTD8000N4-T is a photo transistor in a TO-18 metal can domed package. It is well suited for high reliability and high sensitivity applications. F EATU RES AP P L IC ATIO N S

Contextual Info: Photo Transistor Product No: M TD8 6 0 0 N4 -T Peak Sensitivity Wavelength: 880nm The MTD8600N4-T is a photo transistor in a TO-18 metal can dome top package. It is well suited for high reliability and high sensitivity applications. F EATU RES AP P L IC ATIO N S

FCX2369

Abstract: FCX2369A
Contextual Info: FCX2369A FCX2369 SOT89 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR FEATU RES T h e se d evice s are suitable for use in h ig h speed, lo w current sw itc h in g applications. P A R T M A R K IN G D E T A IL S - N4 FCX2369A - FCX2369 N5 ABSOLUTE M A X IM U M RATINGS

DDTC113TLP

Abstract: "MARKING CODE N" DDTC113TLP-7 DFN1006-3 marking CODE n4
Contextual Info: DDTC113TLP PRE-BIASED SMALL SIGNAL SURFACE MOUNT NPN TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1

PT086N4

Abstract: PT086N
Contextual Info: Photo Transistor PT086N4 2.ELECTRICAL & OPTICAL CHARACTERISTICS Ta=25℃ Dimensions (Unit:mm) 2.0mW/cm 12 10 COLLECTOR CURRENT (mA) ･High Reliability ･Optical Switches ･Optical Sensors ･Edge Sensing ･Smoke Detectors COLLECTOR CURRENT (mA) FEATURES

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

N4 MMIC

Abstract: marking n4 mmic
Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

DAC-08

Contextual Info: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

Contextual Info: Preliminary Preliminary Product Description NGA-486 Stanford Microdevices’ NGA-486 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for

N4 MMIC

Abstract: NGA-486
Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ NGA-486 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for

Contextual Info: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series

419B-02

Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
Contextual Info: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series

N4 Amplifier

Abstract: marking code n41 TRANSISTOR marking code CB TRANSISTOR marking CB code MSC2295-BT1 MSC2295-CT1 sc 107 transistor transistor N41
Contextual Info: NPN RF Amplifier Transistors Surface Mount MSC2295-BT1 MSC2295-CT1 COLLECTOR 3 3 1 2 BASE 1 EMITTER 2 CASE 318D–03, STYLE1 SC–59 MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

UBA2010

Abstract: UBA2010T UBA2010/N4 n556 N5560 T8-6foot-70W Philips instant on BALLAST CONTROL IC dimmable Fluorescent BALLAST
Contextual Info: }}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}} F I N A L TYPE COMMERCIAL D E V I C E S P E C I F I C A T I O N :UBA2010 T EXPERIMENTAL :N5560 1. General description The UBA2010 is a TL DIMMABLE HALF BRIDGE driver. The high voltage circuit is intended to drive and

Contextual Info: m TIP127A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc “75W Tc = 25 'c [ABSOLUTE MAXIMUM RATINGS <Ta = 25 -C1 1 Symbol Rating Unit Collector-Base Voltage

N3 smd transistor

Abstract: smd transistor marking n3 smd transistor n2 smd n4 2SC1653 TRANSISTOR N3 SMD transistor 23 N3 smd transistor sot 23 N2 transistor smd transistor SMD N3
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1653 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High voltage VCEO : 130V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ. VCE=3.0V,IC=15mA 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

SO3572R

Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
Contextual Info: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo