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    N4 TRANSISTOR Search Results

    N4 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    N4 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    V 904 RL 805

    Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
    Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures


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    BFG520W BFG520W/X; BFG520W/XR OT343 OT343R BFG520W/X BFG520W/XR 7110fli V 904 RL 805 N4 TAM transistor fp 1016 DIN45004B PDF

    equivalent transistor TT 3043

    Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
    Contextual Info: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1


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    7110fl2tj BFS540 OT323 MBC370 OT323. emitte-176 equivalent transistor TT 3043 transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308 PDF

    TLP721

    Abstract: TLP721F 11-5B2 E67349 VDE0884 74285
    Contextual Info: TOSHIBA TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY "n4 n33 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic


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    TLP721 TLP721 UL1577 EN60065 EN60950 EN4330784 E67349 E152349 TLP721F 11-5B2 E67349 VDE0884 74285 PDF

    BT 816 transistor

    Abstract: PA 1515 transistor 9921 transistor
    Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure


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    BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor PDF

    Contextual Info: Photo Transistor Product No: M TD8 0 0 0 N4 -T Peak Sensitivity Wavelength: 880nm The MTD8000N4-T is a photo transistor in a TO-18 metal can domed package. It is well suited for high reliability and high sensitivity applications. F EATU RES AP P L IC ATIO N S


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    880nm MTD8000N4-T PDF

    Contextual Info: Photo Transistor Product No: M TD8 6 0 0 N4 -T Peak Sensitivity Wavelength: 880nm The MTD8600N4-T is a photo transistor in a TO-18 metal can dome top package. It is well suited for high reliability and high sensitivity applications. F EATU RES AP P L IC ATIO N S


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    880nm MTD8600N4-T PDF

    DDTC113TLP

    Abstract: "MARKING CODE N" DDTC113TLP-7 DFN1006-3 marking CODE n4
    Contextual Info: DDTC113TLP PRE-BIASED SMALL SIGNAL SURFACE MOUNT NPN TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1


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    DDTC113TLP AEC-Q101 DFN1006-3 J-STD-020C DS30843 DDTC113TLP "MARKING CODE N" DDTC113TLP-7 DFN1006-3 marking CODE n4 PDF

    PT086N4

    Abstract: PT086N
    Contextual Info: Photo Transistor PT086N4 2.ELECTRICAL & OPTICAL CHARACTERISTICS Ta=25℃ Dimensions (Unit:mm) 2.0mW/cm 12 10 COLLECTOR CURRENT (mA) ・High Reliability ・Optical Switches ・Optical Sensors ・Edge Sensing ・Smoke Detectors COLLECTOR CURRENT (mA) FEATURES


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    PT086N4 PT086N PT086N4 PT086N PDF

    Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .


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    MAT-03 DAC-08, 992mA 992rnA, 008mA PDF

    N4 MMIC

    Abstract: marking n4 mmic
    Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with


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    NGA-486 NGA-486 EDS-101104 N4 MMIC marking n4 mmic PDF

    Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with


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    NGA-486 NGA-486 EDS-101104 PDF

    DAC-08

    Contextual Info: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ


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    PDF

    I 508 V

    Abstract: 2N4033 2N4030 2N4030-2N4031 2N4032 2N4032-2N4033 2N40 2N4031 N4030
    Contextual Info: 2N4030-2N4031 2N4032-2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030, 2N4031, 2N4032, and 2N4033 are silicon planar epitaxial PNP transistors in Jedec TO39 metal case primarily intended for large signal, low noise industrial applications.


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    2N4030-2N4031 2N4032-2N4033 2N4030, 2N4031, 2N4032, 2N4033 I 508 V 2N4030 2N4030-2N4031 2N4032 2N4032-2N4033 2N40 2N4031 N4030 PDF

    Contextual Info: Preliminary Preliminary Product Description NGA-486 Stanford Microdevices’ NGA-486 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for


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    NGA-486 NGA-486 DC-6000 1950Mhz EDS-101104 PDF

    Contextual Info: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


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    NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D PDF

    N4 Amplifier

    Abstract: marking code n41 TRANSISTOR marking code CB TRANSISTOR marking CB code MSC2295-BT1 MSC2295-CT1 sc 107 transistor transistor N41
    Contextual Info: NPN RF Amplifier Transistors Surface Mount MSC2295-BT1 MSC2295-CT1 COLLECTOR 3 3 1 2 BASE 1 EMITTER 2 CASE 318D–03, STYLE1 SC–59 MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous


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    MSC2295-BT1 MSC2295-CT1 N4 Amplifier marking code n41 TRANSISTOR marking code CB TRANSISTOR marking CB code MSC2295-BT1 MSC2295-CT1 sc 107 transistor transistor N41 PDF

    sot-23 Marking G1

    Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
    Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0


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    OT-23 MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 MMBT5087 MMBT5086 MMBTA42 sot-23 Marking G1 marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l PDF

    Contextual Info: m TIP127A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc “75W Tc = 25 'c [ABSOLUTE MAXIMUM RATINGS <Ta = 25 -C1 1 Symbol Rating Unit Collector-Base Voltage


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    TIP127A -600mA 0DD1314 TIPI27A PDF

    N3 smd transistor

    Abstract: smd transistor marking n3 smd transistor n2 smd n4 2SC1653 TRANSISTOR N3 SMD transistor 23 N3 smd transistor sot 23 N2 transistor smd transistor SMD N3
    Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1653 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High voltage VCEO : 130V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ. VCE=3.0V,IC=15mA 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1


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    2SC1653 OT-23 N3 smd transistor smd transistor marking n3 smd transistor n2 smd n4 2SC1653 TRANSISTOR N3 SMD transistor 23 N3 smd transistor sot 23 N2 transistor smd transistor SMD N3 PDF

    SO3572R

    Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
    Contextual Info: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo


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    CB-166 OT-23) BFW30 1000m SO3572R transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl PDF

    Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 75W 850 - 960 MHz PH0810-75 V2.00 Features • • • • • D esigned for L inear A m plifier A pplications Class AB: -32 clBc Typ 3rd 1MD at 75 W atts PEP C om m on H m itter C onfig u ratio n In tern al In p u t a n d O u tp u t Im p ed a n ce M atching


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    PH0810-75 PDF

    KRC668U

    Contextual Info: SEM ICO NDUCTO R KRC666U-KRC672U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


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    KRC666U-KRC672U KRC666U KRC667U KRC668U KRC669U KRC670U KRC672l KRC672U PDF

    coutant

    Abstract: emetteur video BF 470 BF470
    Contextual Info: BF 470 PIMP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BF 469 Video output stages in black and white and color TV sets E ta g es d e s o r tie des a m p lific a te u r s v id e o d a n s les té lé v is e u rs n o ir e t b la n c e t c o u le u r


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    O-126- CB-16 coutant emetteur video BF 470 BF470 PDF

    44358

    Abstract: 4435a serial counter 24129 lek 923 LC587004 LC587006 LC587008 QIP80A 587006
    Contextual Info: Ordering number : ENÌK4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8,12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC5B7008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD


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    K4435A LC587008, LC587004, LC587006 LC5B7008 80-pin LC5870 44358 4435a serial counter 24129 lek 923 LC587004 LC587008 QIP80A 587006 PDF