N4 TRANSISTOR Search Results
N4 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 |
|
BLA1011-300 - 300W LDMOS Avionics Power Transistor |
|
||
| 54F151LM/B |
|
54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
|
||
| 93L422ADM/B |
|
93L422A - 256 x 4 TTL SRAM |
|
||
| 54F151/BEA |
|
54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
|
||
| 54F573FM/B |
|
54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
|
N4 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
V 904 RL 805
Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
|
OCR Scan |
BFG520W BFG520W/X; BFG520W/XR OT343 OT343R BFG520W/X BFG520W/XR 7110fli V 904 RL 805 N4 TAM transistor fp 1016 DIN45004B | |
equivalent transistor TT 3043
Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
|
OCR Scan |
7110fl2tj BFS540 OT323 MBC370 OT323. emitte-176 equivalent transistor TT 3043 transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308 | |
TLP721
Abstract: TLP721F 11-5B2 E67349 VDE0884 74285
|
OCR Scan |
TLP721 TLP721 UL1577 EN60065 EN60950 EN4330784 E67349 E152349 TLP721F 11-5B2 E67349 VDE0884 74285 | |
BT 816 transistor
Abstract: PA 1515 transistor 9921 transistor
|
OCR Scan |
BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor | |
|
Contextual Info: Photo Transistor Product No: M TD8 0 0 0 N4 -T Peak Sensitivity Wavelength: 880nm The MTD8000N4-T is a photo transistor in a TO-18 metal can domed package. It is well suited for high reliability and high sensitivity applications. F EATU RES AP P L IC ATIO N S |
Original |
880nm MTD8000N4-T | |
|
Contextual Info: Photo Transistor Product No: M TD8 6 0 0 N4 -T Peak Sensitivity Wavelength: 880nm The MTD8600N4-T is a photo transistor in a TO-18 metal can dome top package. It is well suited for high reliability and high sensitivity applications. F EATU RES AP P L IC ATIO N S |
Original |
880nm MTD8600N4-T | |
DDTC113TLP
Abstract: "MARKING CODE N" DDTC113TLP-7 DFN1006-3 marking CODE n4
|
Original |
DDTC113TLP AEC-Q101 DFN1006-3 J-STD-020C DS30843 DDTC113TLP "MARKING CODE N" DDTC113TLP-7 DFN1006-3 marking CODE n4 | |
PT086N4
Abstract: PT086N
|
Original |
PT086N4 PT086N PT086N4 PT086N | |
|
Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . . |
OCR Scan |
MAT-03 DAC-08, 992mA 992rnA, 008mA | |
N4 MMIC
Abstract: marking n4 mmic
|
Original |
NGA-486 NGA-486 EDS-101104 N4 MMIC marking n4 mmic | |
|
Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with |
Original |
NGA-486 NGA-486 EDS-101104 | |
DAC-08Contextual Info: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ |
OCR Scan |
||
I 508 V
Abstract: 2N4033 2N4030 2N4030-2N4031 2N4032 2N4032-2N4033 2N40 2N4031 N4030
|
Original |
2N4030-2N4031 2N4032-2N4033 2N4030, 2N4031, 2N4032, 2N4033 I 508 V 2N4030 2N4030-2N4031 2N4032 2N4032-2N4033 2N40 2N4031 N4030 | |
|
Contextual Info: Preliminary Preliminary Product Description NGA-486 Stanford Microdevices’ NGA-486 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for |
Original |
NGA-486 NGA-486 DC-6000 1950Mhz EDS-101104 | |
|
|
|||
|
Contextual Info: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series |
Original |
NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D | |
N4 Amplifier
Abstract: marking code n41 TRANSISTOR marking code CB TRANSISTOR marking CB code MSC2295-BT1 MSC2295-CT1 sc 107 transistor transistor N41
|
Original |
MSC2295-BT1 MSC2295-CT1 N4 Amplifier marking code n41 TRANSISTOR marking code CB TRANSISTOR marking CB code MSC2295-BT1 MSC2295-CT1 sc 107 transistor transistor N41 | |
sot-23 Marking G1
Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
|
OCR Scan |
OT-23 MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 MMBT5087 MMBT5086 MMBTA42 sot-23 Marking G1 marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l | |
|
Contextual Info: m TIP127A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc “75W Tc = 25 'c [ABSOLUTE MAXIMUM RATINGS <Ta = 25 -C1 1 Symbol Rating Unit Collector-Base Voltage |
OCR Scan |
TIP127A -600mA 0DD1314 TIPI27A | |
N3 smd transistor
Abstract: smd transistor marking n3 smd transistor n2 smd n4 2SC1653 TRANSISTOR N3 SMD transistor 23 N3 smd transistor sot 23 N2 transistor smd transistor SMD N3
|
Original |
2SC1653 OT-23 N3 smd transistor smd transistor marking n3 smd transistor n2 smd n4 2SC1653 TRANSISTOR N3 SMD transistor 23 N3 smd transistor sot 23 N2 transistor smd transistor SMD N3 | |
SO3572R
Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
|
OCR Scan |
CB-166 OT-23) BFW30 1000m SO3572R transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl | |
|
Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 75W 850 - 960 MHz PH0810-75 V2.00 Features • • • • • D esigned for L inear A m plifier A pplications Class AB: -32 clBc Typ 3rd 1MD at 75 W atts PEP C om m on H m itter C onfig u ratio n In tern al In p u t a n d O u tp u t Im p ed a n ce M atching |
OCR Scan |
PH0810-75 | |
KRC668UContextual Info: SEM ICO NDUCTO R KRC666U-KRC672U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process. |
OCR Scan |
KRC666U-KRC672U KRC666U KRC667U KRC668U KRC669U KRC670U KRC672l KRC672U | |
coutant
Abstract: emetteur video BF 470 BF470
|
OCR Scan |
O-126- CB-16 coutant emetteur video BF 470 BF470 | |
44358
Abstract: 4435a serial counter 24129 lek 923 LC587004 LC587006 LC587008 QIP80A 587006
|
OCR Scan |
K4435A LC587008, LC587004, LC587006 LC5B7008 80-pin LC5870 44358 4435a serial counter 24129 lek 923 LC587004 LC587008 QIP80A 587006 | |