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    N322A Search Results

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    N322A Price and Stock

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    Toshiba America Electronic Components GT50N322A

    IGBT 1000V 50A TO-3P
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    DigiKey GT50N322A Tray 9 1
    • 1 $5.54
    • 10 $5.54
    • 100 $2.66
    • 1000 $2.19
    • 10000 $2.19
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    Avnet Americas GT50N322A Tube 24 Weeks 50
    • 1 -
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    • 100 $2.61
    • 1000 $2.19
    • 10000 $2.19
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    Sullins Connector Solutions NPPN322AFEN-RC

    CONN HDR 64POS 0.079 GOLD PCB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NPPN322AFEN-RC Tube 1,000
    • 1 -
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    • 1000 $2.02
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    Sullins Connector Solutions NPPN322AFCN-RC

    CONN HDR 64POS 0.079 GOLD PCB
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    DigiKey NPPN322AFCN-RC Tube 1,000
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    • 1000 $2.06
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    Siemens 3VA61407HN322AA0

    BRKR 3VA61 3P 40A 100KA ETU3-LSI
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    DigiKey 3VA61407HN322AA0 Box 1
    • 1 $2928.35
    • 10 $2928.35
    • 100 $2928.35
    • 1000 $2928.35
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    Mouser Electronics 3VA61407HN322AA0
    • 1 $2565.68
    • 10 $2565.68
    • 100 $2565.68
    • 1000 $2565.68
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    Siemens 3VA62107HN322AA0

    BRKR 3VA62 3P 100A 100KA ETU3LSI
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    DigiKey 3VA62107HN322AA0 Box 1
    • 1 $5614.21
    • 10 $5614.21
    • 100 $5614.21
    • 1000 $5614.21
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    Find more N322A price and stock on Findchips.com

    N322A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    n322ad

    Contextual Info: PWM Optimized N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AD3ST 970pF O-252 n322ad PDF

    N322AP

    Abstract: ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS
    Contextual Info: N322AP3/N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AP3/ISL9N322AS3ST 970pF O-263AB O-220AB N322AP ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS PDF

    n322ad

    Abstract: ISL9N322AD3ST N-322 N322 16E-3
    Contextual Info: PWM Optimized N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AD3ST 970pF O-252 n322ad ISL9N322AD3ST N-322 N322 16E-3 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    N322AS

    Contextual Info: N322AP3/N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AP3/ISL9N322AS3ST 970pF O-263AB N322AS PDF