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    N322A Search Results

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    Rochester Electronics LLC ISL9N322AP3

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N322AP3 Bulk 156,653 865
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    Rochester Electronics LLC ISL9N322AS3ST

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N322AS3ST Bulk 8,800 200
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    Toshiba America Electronic Components GT50N322A

    IGBT 1000V 50A TO-3P
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    DigiKey GT50N322A Tray 9 1
    • 1 $5.54
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    • 100 $2.66
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    Avnet Americas GT50N322A Tube 24 Weeks 50
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    Siemens 3VA62257HN322AA0

    BRKR 3VA62 3P 250A 100KA ETU3LSI
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    DigiKey 3VA62257HN322AA0 Box 1
    • 1 $5970.35
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    Siemens 3VA61156HN322AA0

    BRKR 3VA61 3P 150A 65KA ETU3-LSI
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    DigiKey 3VA61156HN322AA0 Box 1
    • 1 $3786.08
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    Mouser Electronics 3VA61156HN322AA0
    • 1 $3190.29
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    • 100 $3190.29
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    N322A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    n322ad

    Contextual Info: PWM Optimized N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    ISL9N322AD3ST 970pF O-252 n322ad PDF

    N322AP

    Abstract: ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS
    Contextual Info: N322AP3/N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    ISL9N322AP3/ISL9N322AS3ST 970pF O-263AB O-220AB N322AP ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS PDF

    n322ad

    Abstract: ISL9N322AD3ST N-322 N322 16E-3
    Contextual Info: PWM Optimized N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    ISL9N322AD3ST 970pF O-252 n322ad ISL9N322AD3ST N-322 N322 16E-3 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    N322AS

    Contextual Info: N322AP3/N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    ISL9N322AP3/ISL9N322AS3ST 970pF O-263AB N322AS PDF