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    Nisshinbo Micro Devices R3160N310A-TR-FE

    LOW SUPPLY CURRENT 60V INPUT VOL
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    DigiKey () R3160N310A-TR-FE Digi-Reel 50 1
    • 1 $1.84
    • 10 $1.35
    • 100 $1.10
    • 1000 $0.96
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    R3160N310A-TR-FE Cut Tape 50 1
    • 1 $1.84
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    Mouser Electronics R3160N310A-TR-FE 27
    • 1 $2.91
    • 10 $1.89
    • 100 $1.45
    • 1000 $1.06
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    Siemens 3SU19000BN310AA0

    EMERGENCY STOP BACKING PLATE, YE
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    DigiKey 3SU19000BN310AA0 Bulk 10
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    Mouser Electronics 3SU19000BN310AA0
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    RS 3SU19000BN310AA0 Bulk 6 Weeks 10
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    • 100 $24.05
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    Siemens 3VA61105HN310AA0

    BRKR 3VA61 3P 100A 35KA ETU3-LS
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    DigiKey 3VA61105HN310AA0 Box 1
    • 1 $2006.48
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    Mouser Electronics 3VA61105HN310AA0
    • 1 $1782.19
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    Siemens 3VA61107HN310AA0

    BRKR 3VA61 3P 0 100KA ETU3-LSI
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    DigiKey 3VA61107HN310AA0 Box 1
    • 1 $3370.60
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    Mouser Electronics 3VA61107HN310AA0
    • 1 $3021.12
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    Siemens 3VA62256HN310AA0

    BRKR 3VA62 3P 250A 65KA ETU3-LSI
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    DigiKey 3VA62256HN310AA0 Box 1
    • 1 $4860.49
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    Mouser Electronics 3VA62256HN310AA0
    • 1 $4318.40
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    N310A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    u574

    Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D
    Contextual Info: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16


    OCR Scan
    Q8718 ISO-9001: 100MHz 300MHz 400MHz 800MHz 144/430MHZ u574 IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D PDF

    n310ad

    Abstract: ISL9N310AD3
    Contextual Info: N310AD3, N310AD3S3T TM Data Sheet November 2000 File Number 30V, 0.010 Ohm, 35A, N-Channel Logic Level UltraFET Trench Power MOSFETs PWM Optimized This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining


    Original
    ISL9N310AD3, ISL9N310AD3S3T ISL9N310AD3ST O-252AA ISL9N310AD3 O-251AA n310ad ISL9N310AD3 PDF

    N310AS

    Abstract: N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST
    Contextual Info: N310AP3/N310AS3ST/N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original
    ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 1800pF N310AS N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST PDF

    n310ad

    Abstract: ISL9N310AD3 40e5
    Contextual Info: N310AD3, N310AD3S3T Data Sheet November 2000 File Number 30V, 0.010 Ohm, 35A, N-Channel Logic Level UltraFET Trench Power MOSFETs PWM Optimized This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining


    Original
    ISL9N310AD3, ISL9N310AD3S3T 1800pF n310ad ISL9N310AD3 40e5 PDF

    n310ad

    Contextual Info: N310AD3/N310AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    ISL9N310AD3/ISL9N310AD3ST 1800pF O-252 O-251 n310ad PDF

    Contextual Info: N310AP3, N310AS3ST TM Data Sheet November 2000 File Number 30V, 0.010 Ohm, 62A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original
    ISL9N310AP3, ISL9N310AS3ST PDF

    N310AS

    Abstract: ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST M028
    Contextual Info: N310AP3/N310AS3ST/N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original
    ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 1800pF N310AS ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST M028 PDF

    N317

    Abstract: n334 N-338 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a
    Contextual Info: -Gfo, N CONNECTORS S in c e 1 9 7 8 ORDERING INFORMATION t N-301A-B S G T INSULATION D DELRIN T TEFLON P PLASTIC PB PBT POLYESTER PH PHENOLIC CONTACT PLATING C CHROME G GOLD N NICKEL S SILVER BODY PLATING C CHROME G GOLD N NICKEL -* S SILVER BODY MATERIAL


    OCR Scan
    N-301A-B N-301 N-313 N-325 N-337 N-302 N-314 N-326 N-338 N-303 N317 n334 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a PDF

    Contextual Info: N310AP3, N310AS3ST, N310AS3 TM Data Sheet December 2000 File Number 30V, 0.010 Ohm, 62A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining


    Original
    ISL9N310AP3, ISL9N310AS3ST, ISL9N310AS3 PDF

    N310A

    Contextual Info: N310AP3, N310AS3ST, N310AS3 Data Sheet December 2000 File Number 30V, 0.010 Ohm, 62A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining


    Original
    ISL9N310AP3, ISL9N310AS3ST, ISL9N310AS3 N310A PDF

    n310ad

    Abstract: ISL9N310AD3 marking n6 transistor ISL9N310AD3ST
    Contextual Info: N310AD3/N310AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original
    ISL9N310AD3/ISL9N310AD3ST 1800pF O-252 O-251 n310ad ISL9N310AD3 marking n6 transistor ISL9N310AD3ST PDF