N303A Search Results

N303A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
N303AP		Fairchild Semiconductor	N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?	Original	PDF	207.4KB	11
N303AS		Fairchild Semiconductor	N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?	Original	PDF	207.4KB	11

N303A Price and Stock

Filter by Manufacturer

Select Manufacturer


onsemi ISL9N303AP3 MOSFET N-CH 30V 75A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N303AP3	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC ISL9N303AS3 MOSFET N-CH 30V 75A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N303AS3	Tube			98	1 - 10 - 100 $3.08 1000 $3.08 10000 $3.08	Buy Now
onsemi ISL9N303AS3ST MOSFET N-CH 30V 75A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N303AS3ST	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC ISL9N303AS3ST MOSFET N-CH 30V 75A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N303AS3ST	Bulk			156	1 - 10 - 100 - 1000 $1.93 10000 $1.93	Buy Now
Nisshinbo Micro Devices R3117N303A-TR-YE IC SUPERVISOR 1 CHANNEL SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R3117N303A-TR-YE	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Avnet Americas	R3117N303A-TR-YE	Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Mouser Electronics	R3117N303A-TR-YE		54			1 $1.64 10 $1.05 100 $0.77 1000 $0.47 10000 $0.44	Buy Now
Rochester Electronics	R3117N303A-TR-YE		27,000		1	1 - 10 - 100 $0.32 1000 $0.27 10000 $0.24	Buy Now

Find more N303A price and stock on Findchips.com

N303A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2T931A Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K	OCR Scan	MOKP51KOB, KTC631 TI2023 II2033 TT213 TI216 fI217 II302 XI306 n306A 2T931A KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A	PDF
u574 Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D Contextual Info: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16	OCR Scan	Q8718 ISO-9001: 100MHz 300MHz 400MHz 800MHz 144/430MHZ u574 IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D	PDF
1HT251 Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313 Contextual Info: WmmËÊÊm W h A iW f W * i rïS >••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A	OCR Scan	FojO33 KT357 KT358 KT361 KT363 KT364-2 KT366 KT368 KT369 KT369-1 1HT251 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313	PDF
ISL9N303AP3 Abstract: ISL9N303AS3 ISL9N303AS3ST N303AP N303AS diode marking 41a on semiconductor KP20 Contextual Info: PWM Optimized N303AP3 / N303AS3ST / N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining	Original	ISL9N303AP3 ISL9N303AS3ST ISL9N303AS3 7000pF ISL9N303AS3 N303AP N303AS diode marking 41a on semiconductor KP20	PDF
N317 Abstract: n334 N-338 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a Contextual Info: -Gfo, N CONNECTORS S in c e 1 9 7 8 ORDERING INFORMATION t N-301A-B S G T INSULATION D DELRIN T TEFLON P PLASTIC PB PBT POLYESTER PH PHENOLIC CONTACT PLATING C CHROME G GOLD N NICKEL S SILVER BODY PLATING C CHROME G GOLD N NICKEL -* S SILVER BODY MATERIAL	OCR Scan	N-301A-B N-301 N-313 N-325 N-337 N-302 N-314 N-326 N-338 N-303 N317 n334 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a	PDF
N347A Abstract: N-336A n328 N303B sp3t N336A Contextual Info: SINGLE-POLE THREE-THROW SWITCHES FEATURES • • • • • • • • Multioctave bands 0.2 to 18 GHz Current and TTL control Low loss High isolation Medium and high speed models Drop-in models Amplitude and phase tracking Binary decoded logic Frequency	Original	S303A S303B N303A N303B S313A S313B N313A N313B S336A S336B N347A N-336A n328 sp3t N336A	PDF
S347 Abstract: m313a N347A Contextual Info: SII\IGLE-POLE THREE-THROW SW ITCHES FEATU R ES • • • • • • • • Multioctave bands 0.2 to 18 GHz Current and TTL control Low loss High isolation Medium and high speed models Drop-in models Amplitude and phase tracking Binary decoded logic 'Frequency	OCR Scan	S303A S303B N303A N303B S313A S313B M313A N313B S336A S336B S347 N347A	PDF
N303AP Abstract: ISL9N303AP3 ISL9N303AS3ST N303AS M043 TO-263 Package diode marking 41a on semiconductor KP20 Contextual Info: PWM Optimized N303AP3/N303AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.	Original	ISL9N303AP3/ISL9N303AS3ST 7000pF O-263AB N303AP ISL9N303AP3 ISL9N303AS3ST N303AS M043 TO-263 Package diode marking 41a on semiconductor KP20	PDF
M043 Diode Contextual Info: PWM Optimized N303AP3/N303AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.	Original	ISL9N303AP3/ISL9N303AS3ST 7000pF O-263ABr M043 Diode	PDF
2T908A Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117 Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,	OCR Scan	T-0574D. 30Eiaa Coi03nojiH 2T908A 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117	PDF
KC156A Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213 Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:	OCR Scan	XapfaKOB-57, KC156A ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213	PDF
N303AP Abstract: M043 Diode ISL9N303AP3 ISL9N303AS3 ISL9N303AS3ST N303AS Contextual Info: PWM Optimized N303AP3 / N303AS3ST / N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining	Original	ISL9N303AP3 ISL9N303AS3ST ISL9N303AS3 7000pF N303AP M043 Diode ISL9N303AS3 N303AS	PDF