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N303A Datasheets (2)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
N303AP		Fairchild Semiconductor	N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?	Original	PDF	207.4KB	11
N303AS		Fairchild Semiconductor	N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?	Original	PDF	207.4KB	11

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Nisshinbo Micro Devices R5435N303AA-TR-FE 3-CELL TO 5-CELL LI-ION BATTERY PROTECTION IC - Tape and Reel (Alt: R5435N303AA-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	R5435N303AA-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Newark	R5435N303AA-TR-FE	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.30	Buy Now
Nisshinbo Micro Devices R3117N303A-TR-YE VOLTAGE DETECTOR WITH SENSE PIN - Tape and Reel (Alt: R3117N303A-TR-YE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	R3117N303A-TR-YE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Newark	R3117N303A-TR-YE	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.49	Buy Now
Rochester Electronics	R3117N303A-TR-YE		27,000		1	1 - 10 - 100 $0.32 1000 $0.27 10000 $0.24	Buy Now
AMETEK Inc EN303AG91L ROTRON REGENERATIVE BLOWER, HEAVY DUTY, .5 HP, XP, 230/460, 3, 50/60
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	EN303AG91L	Bulk			1	1 $7025.28 10 $7025.28 100 $7025.28 1000 $7025.28 10000 $7025.28	Get Quote
AMETEK Inc EN303AG58L ROTRON BLOWER, REGENERATIVE, SEALED, EXP PROOF, 0.5HP, 115/230V, 1PH, 50/60 HZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	EN303AG58L	Bulk			1	1 $8065.62 10 $8065.62 100 $8065.62 1000 $8065.62 10000 $8065.62	Get Quote
New Jersey Semiconductor 1N303A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1N303A		5,015		1	1 $14.40 10 $11.52 100 $10.08 1000 $9.36 10000 $9.36	Buy Now

N303A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2T931A Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K	OCR Scan	mokp51kob ktc631 ti2023 ii2033 +16tt213 ti216 fi217 ii302 xi306 n306a 2t931a kt853 2t926a kt838a 2t803a 2t809a 2t904a 2t808a 2t603 2t921a	PDF
u574 Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D Contextual Info: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16	OCR Scan	q8718 iso-9001 100mhz 300mhz +13400mhz 800mhz 144/430mhz u574 ic bl 176a if cable 8d-fb coaxial cable 5d-2v b11g 105j 250v 2dlf mq 303a b177d b176d	PDF
1HT251 Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313 Contextual Info: WmmËÊÊm W h A iW f W * i rïS >••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A	OCR Scan	fojo33 kt357 kt358 kt361 +16kt363 kt364-2 kt366 kt368 kt369 kt369-1 1ht251 2t203 kt117 1t308 2t355a 2t312 it308b k1ht251 kt117b 2t313	PDF
ISL9N303AP3 Abstract: ISL9N303AS3 ISL9N303AS3ST N303AP N303AS diode marking 41a on semiconductor KP20 Contextual Info: PWM Optimized N303AP3 / N303AS3ST / N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining	Original	isl9n303ap3 isl9n303as3st isl9n303as3 7000pf +4n303ap n303as diode marking 41a on semiconductor kp20	PDF
N317 Abstract: n334 N-338 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a Contextual Info: -Gfo, N CONNECTORS S in c e 1 9 7 8 ORDERING INFORMATION t N-301A-B S G T INSULATION D DELRIN T TEFLON P PLASTIC PB PBT POLYESTER PH PHENOLIC CONTACT PLATING C CHROME G GOLD N NICKEL S SILVER BODY PLATING C CHROME G GOLD N NICKEL -* S SILVER BODY MATERIAL	OCR Scan	n-301a-b n-301 n-313 n-325 +15n-337 n-302 n-314 n-326 n-338 n-303 n317 n334 n-p-59u n333a coaxial 5d-2v n326 n306a n327 n329a	PDF
N347A Abstract: N-336A n328 N303B sp3t N336A Contextual Info: SINGLE-POLE THREE-THROW SWITCHES FEATURES • • • • • • • • Multioctave bands 0.2 to 18 GHz Current and TTL control Low loss High isolation Medium and high speed models Drop-in models Amplitude and phase tracking Binary decoded logic Frequency	Original	s303a s303b n303a n303b +11s313a s313b n313a n313b s336a s336b n347a n-336a n328 sp3t n336a	PDF
S347 Abstract: m313a N347A Contextual Info: SII\IGLE-POLE THREE-THROW SW ITCHES FEATU R ES • • • • • • • • Multioctave bands 0.2 to 18 GHz Current and TTL control Low loss High isolation Medium and high speed models Drop-in models Amplitude and phase tracking Binary decoded logic 'Frequency	OCR Scan	s303a s303b n303a n303b +8s313a s313b m313a n313b s336a s336b s347 n347a	PDF
N303AP Abstract: ISL9N303AP3 ISL9N303AS3ST N303AS M043 TO-263 Package diode marking 41a on semiconductor KP20 Contextual Info: PWM Optimized N303AP3/N303AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.	Original	isl9n303ap3/isl9n303as3st 7000pf o-263ab n303ap +7isl9n303ap3 isl9n303as3st n303as m043 to-263 package diode marking 41a on semiconductor kp20	PDF
M043 Diode Contextual Info: PWM Optimized N303AP3/N303AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.	Original	isl9n303ap3/isl9n303as3st 7000pf o-263abr m043 diode	PDF
2T908A Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117 Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,	OCR Scan	t-0574d 30eiaa coi03nojih 2t908a +92t602 2t907a kt604 1ht251 1t813 2t903 kt920a po6 115.05 kt117	PDF
KC156A Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213 Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:	OCR Scan	xapfakob-57 kc156a ky202e k174xa2 +7kt809a kt805a kt610b kp350a kt808a kt920a kc213	PDF
N303AP Abstract: M043 Diode ISL9N303AP3 ISL9N303AS3 ISL9N303AS3ST N303AS Contextual Info: PWM Optimized N303AP3 / N303AS3ST / N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining	Original	isl9n303ap3 isl9n303as3st isl9n303as3 7000pf +3n303ap m043 diode n303as	PDF