N-CHANNEL SILICON POWER Search Results

Bft46

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic

CRS15

Abstract: BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect

CRS15

Abstract: BFT46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic

BF511

Abstract: Bf513
Contextual Info: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect

BF510

Abstract: BF511 BF512 BF513
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

N-Channel and P-Channel

Contextual Info: CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for

Contextual Info: CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for

sot963

Abstract: SOT-963
Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for

marking code ct

Abstract: 50s MARKING CODE
Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for

CMLDM3757

Contextual Info: CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed

Contextual Info: CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for

Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for

Contextual Info: CMLDM7484 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for

MTM7632

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76320 is the composite MOS FET (N-channel and P-channel MOS

MTM76320

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Package  Overview MTM76320 is the composite MOS FET (N-channel and P-channel MOS

transistor j201

Abstract: J201 N-channel JFET j201 j201 jfet jfet to 92
Contextual Info: Central J201 TM Semiconductor Corp. SILICON N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR J201 type is an epoxy molded N-Channel Silicon Junction Field Effect Transistor designed for battery powered equipment and low level signal applications. MARKING: FULL PART NUMBER

J113 equivalent

Abstract: J112 J111 J113 "Field-Effect Transistors" J112 equivalent Field-Effect Transistors J-112
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors

BF512

Abstract: Transistors specification with hybrid marking code 513 BF510 BF511 BF513
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon field-effect transistors

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

2SK19

Abstract: transistor 2sk19 2SK19BL 2sk19-bl
Contextual Info: CRO 2SK19 N-CHANNEL SILICON FET CASE T0-92DD DESCRIPTION 2SK19 is N-channel silicon planar field effect transistor designed for FM tuner and VHF amplifier applications. DSG ABSOLUTE MAXIMUM RATINGS Gain-Drain Voltage Gate Current Total Power Dissipation @ T a=25°C

2SK3018

Abstract: 3018G 2SK3018 UTC
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is

bf410

Abstract: BF410C BF410A BF410B BF410D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION

yn 1018

Abstract: MPF820 RS-50S Scans-00100834
Contextual Info: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.