N-CHANNEL SILICON POWER Search Results

CRS15

Abstract: BFT46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic

BF511

Abstract: Bf513
Contextual Info: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect

N-Channel and P-Channel

Contextual Info: CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for

Contextual Info: CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for

marking code ct

Abstract: 50s MARKING CODE
Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for

bf410

Abstract: BF410C BF410A BF410B BF410D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION

yn 1018

Abstract: MPF820 RS-50S Scans-00100834
Contextual Info: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.

mtm76325

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS

PHILIPS MOSFET MARKING

Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET

UM6K1N

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UM6K1N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET DESCRIPTION  The UTC UM6K1N is a silicon N-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate

Contextual Info: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low

2SK19Y

Abstract: 2SK19
Contextual Info: CRO 2SK19 N-CHANNEL SILICON FET CASE T0-92DD DESCRIPTION 2SK19 is N-channel silicon planar field effect transistor designed for FM tuner and VHF amplifier applications. DSG ABSOLUTE MAXIMUM RATINGS Gain-Drain Voltage Gate Current Total Power Dissipation @ T a= 2 5 °C

um6k31n

Abstract: UM6K31
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UM6K31N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET TRANSISTOR „ 6 DESCRIPTION 5 4 The UTC UM6K31N is a silicon N-channel MOS Field Effect Transistor. It can be used in switching applications. „ „ 3 SOT-363 SYMBOL ORDERING INFORMATION

EN5387

Abstract: FX901 PNP Transistor MOSFET
Contextual Info: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low

bf245c

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors

NE5500234

Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

Contextual Info: CMNDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM7001 is an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver

Contextual Info: CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7001 is an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver

Contextual Info: CEDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver

FET2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG6K4206 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package FG6K4206 is the dual-type MOS FET (N-channel and P-channel) which is

FG694301

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG694301 is N-P channel dual type small signal MOS FET employed small

FET2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG654301 is N-P channel dual type small signal MOS FET employed small

BF998R

Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer

FET2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG654301 is N-P channel dual type small signal MOS FET employed small