N-CHANNEL MOSFET 600V 1A Search Results

fqt1n60

Abstract: FQT1N60C 1A 300V mosfet
Contextual Info: N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Mosfet

Abstract: SSF2N60F mosfet 600V 100A
Contextual Info: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF2N60D1
Contextual Info: SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.9Ω (typ.) ID 2A TO-252 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and

Contextual Info: SVD1N60M/SVD1N60T 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

L2N600

Contextual Info: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Parameter

Contextual Info: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N60 Electrical Characteristics Parameter

DB-193

Abstract: TFF2N60 TO-220FP-3
Contextual Info: TAK CHEONG N-Channel Power MOSFET 2A, 600V, 4.6Ω 1 = Gate 2 = Drain 3 = Source 1 2 General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

Contextual Info: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

1N60C

Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
Contextual Info: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQD1N60C

Abstract: FQU1N60C
Contextual Info: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQPF1N60C

Contextual Info: TM FQP1N60C / FQPF1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQU1N60C

Contextual Info: QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

fqu1N60C

Abstract: FQD1N60C
Contextual Info: QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

N-Channel mosfet 600v 1a

Abstract: BLV1N60 1A 300V mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Contextual Info: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

1A 300V mosfet

Abstract: BLV1N60 N-Channel mosfet 600v 1a
Contextual Info: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Contextual Info: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Contextual Info: KSMD1N60C / KSMU1N60C 600V N-Channel MOSFET TO-251 TO-252 Features • • • • • • 1A, 600V, RDS on = 11.5Ω @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

p2n60

Abstract: f2n60 pjp2n60 n60p mosfet 600v 10a to-220ab diode marking GA PJF2N60 2A600VRDS
Contextual Info: PJP2N60 / PJF2N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS ON =4.6Ω@VGS=10V, ID=1A TO-220AB ITO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current

FQT1N60C

Abstract: fqt1n60 *1N60C N-Channel mosfet 600v 1a
Contextual Info: QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5Ω Features Description • RDS on = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQT1N60C

Abstract: fairchild MOSFET reliability report
Contextual Info: QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5Ω Features Description • RDS on = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5Ω Features Description • RDS on = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Mosfet

Abstract: SSF2N60
Contextual Info: SSF2N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance