N-CHANNEL MOSFET 500V 25A Search Results

FDH45N50F

Contextual Info: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

F133

Abstract: FDA50N50 FDH50N50 48A110
Contextual Info: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

F133

Abstract: FDA50N50 FDH50N50
Contextual Info: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDH45N50F

Contextual Info: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

TO-3PN

Contextual Info: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

F133

Abstract: FDH45N50F
Contextual Info: UniFET FDH45N50F_F133 TM 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: UniFET TM FDH45N50F_F133 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDA50N50

Abstract: FDH50N50
Contextual Info: TM FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 105 nC)

DL2M50N5

Abstract: mosfet 500V 50A Mosfet 100V 50A
Contextual Info: D W DAWIN Electronics TM DL2M50N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET

Contextual Info: Advance Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions

Contextual Info: Preliminary Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR44N50Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions

IXFR44N50Q3

Abstract: 44N50Q3
Contextual Info: Preliminary Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions

OMD100

Abstract: OMD200 OMD400 OMD500
Contextual Info: OMD100 OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Available Screened To MIL-S-19500, TX, TXV and S Levels

20 amp MOSFET transistor

Abstract: N and P MOSFET
Contextual Info: OM8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE omnirel corp 43E D • bTô^QTB QGQQSTb 7 MOMNI 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package

Contextual Info: OMDIOO OMD4ÛO OMD2QO OMD5QO FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDs on Available Screened To MIL-S-19500, TX, TXV and S Levels

P21NM50N

Abstract: W21NM50N B21NM50N stp21nm50n STB21NM50N
Contextual Info: STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET Table 1: General Features TYPE VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N •

P21NM50N

Abstract: W21NM50N B21NM50N f21nm50n STP21NM50N-STF21NM50N-STW21NM50N STF21NM50N STW2 TO-220 footprint STP21NM50N STW21NM50N
Contextual Info: STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET Table 1: General Features TYPE VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N •

100 amp npn mosfet

Abstract: 100 amp mosfet 400v 20 amp mosfet 500V 25A Mosfet pnp 500v OM8001SC OM8002SC OM8003SC OM8004SC OM803
Contextual Info: T M3E D bTÛ'JÜTB OOQQSTb 7 IOMNI OM 8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE OMNIREL CÔRP 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package

P21NM50

Abstract: F21NM50N P21NM50N W21NM50
Contextual Info: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V

F21NM50N

Abstract: P21NM50N STF21NM50N W21NM50N F21NM50 STB21NM50
Contextual Info: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features VDSS Type @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V

f21nm50n

Abstract: W21NM50N P21NM50N F21NM50 IPAK marked code tc MOSFET MARKING STP N-Channel mosfet 400v 25A STMicroelectronics DIODE marking code st marking code
Contextual Info: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V

F21NM50N

Abstract: P21NM50N W21NM50N F21NM50 w21nm50 STW21NM50 P21NM50 STB21NM50N STB21NM50N-1 STF21NM50N
Contextual Info: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V

APT5017

Abstract: APT5017HLL
Contextual Info: APT5017HLL 500V 25A 0.170W POWER MOS 7 MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON