FDH45N50F Search Results

Contextual Info: FDH45N50F N-Channel UniFETTM FRFET MOSFET 500 V, 45 A, 120 mΩ Features Description • RDS on = 105 mΩ (Typ.) @ VGS = 10 V, ID = 22.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

FDH45N50F

Contextual Info: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDH45N50F_F133 N-Channel UniFETTM FRFET MOSFET 500 V, 45 A, 120 m Features Description • RDS on = 120 m (Max.) @ VGS = 10 V, ID = 22.5 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.

FDH45N50F

Contextual Info: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDH45N50F_F133 N-Channel UniFETTM FRFET MOSFET 500 V, 45 A, 120 m Features Description • RDS on = 120 m (Max.) @ VGS = 10 V, ID = 22.5 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.

F133

Abstract: FDH45N50F
Contextual Info: UniFET FDH45N50F_F133 TM 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: UniFET TM FDH45N50F_F133 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

IRF32N50k

Abstract: IRF32N50 SWITCHING WELDING SCHEMATIC BY MOSFET AN-7536 IGBT ZVT Full bridge ZVT Full bridge transformer IGBT resonant converter for welding FQA28N50F FDH45N50F Welding topologies
Contextual Info: www.fairchildsemi.com AN-7536 FCS Fast Body Diode MOSFET for Phase-Shifted ZVS PWM Full Bridge DC/DC Converter Sampat Shekhawat, Mark Rinehimer and Bob Brockway Discrete Power Group, Fairchild Semiconductor Introduction Topology Description Efficiency, power density, reliability, and cost are

Full-bridge LLC resonant converter

Abstract: LLC resonant converter application note resonant converter for welding AN-9067 Resonant Half-Bridge converter LLC resonant converter transformer fdpf10n50 LLC resonant transformer FDPF10N50FT smps resonant llc
Contextual Info: www.fairchildsemi.com AN-9067 Analysis of MOSFET Failure Modes in LLC Resonant Converter Abstract The trend in power converters is towards increasing power densities. To achieve this goal, it is necessary to reduce power losses, overall system size, and weight by increasing

interleaved Boost PFC

Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50
Contextual Info: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is