N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V Search Results

MTB06N03H8

Abstract: mtb06n03
Contextual Info: CYStech Electronics Corp. Spec. No. : C710H8 Issued Date : 2009.05.07 Revised Date : Page No. : 1/6 N-Channel Logic Level Enhancement Mode Power MOSFET MTB06N03H8 BVDSS ID RDSON max 30V 75A 6.5mΩ Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

C728

Abstract: sop8 Package dimension marking 5c 12
Contextual Info: CYStech Electronics Corp. Spec. No. : C728Q8 Issued Date : 2009.07.01 Revised Date : Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET MTB13N03Q8 BVDSS ID RDSON max 30V 11A 12.5mΩ Description The MTB13N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

MTB09N03

Abstract: td 1583 mtb09n03h8
Contextual Info: CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : Page No. : 1/6 N-Channel Logic Level Enhancement Mode Power MOSFET MTB09N03H8 BVDSS ID RDSON max 30V 50A 9.5mΩ Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

B06N03

Abstract: MTB06N03Q8 sop8 Package dimension mtb06n03
Contextual Info: CYStech Electronics Corp. Spec. No. : C710Q8 Issued Date : 2009.05.07 Revised Date : Page No. : 1/6 N-Channel Logic Level Enhancement Mode Power MOSFET MTB06N03Q8 BVDSS ID RDSON max 30V 18A 6.8mΩ Description The MTB06N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

B11N03

Abstract: MTB11N03Q8 MTB11N
Contextual Info: CYStech Electronics Corp. Spec. No. : C711Q8 Issued Date : 2009.05.07 Revised Date :2009.05.19 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET MTB11N03Q8 BVDSS ID RDSON max 30V 12A 11mΩ Description The MTB11N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

B12N03

Abstract: MTB12N03Q8
Contextual Info: CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET MTB12N03Q8 BVDSS ID RDSON max 30V 12A 11.5mΩ Description The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

50n06

Abstract: MOSFET 50N06 p 50n06 50N06 E C445E3 MTN50N06E3
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN50N06E3 Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 1/8 BVDSS 60V RDSON MAX 22 mΩ ID 50A Description The MTN50N06E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

MTN3205E3

Abstract: marking 66a IAS-100 N3205
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN3205E3 Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 1/8 BVDSS RDSON Max ID 55V 8 mΩ 110A Description The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

Contextual Info: AP6900GH-HF Preliminary Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET CH-1 Simple Drive Requirement BVDSS 30V Fast Switching Performance RDS ON 6.2m Two Independent Device Halogen Free & RoHS Compliant Product ID BVDSS RDS(ON)

4505ss

Abstract: A1770 24V 1A mosfet
Contextual Info: CYStech Electronics Corp. Spec. No. : C439Q8 Issued Date : 2009.02.19 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4505Q8 BVDSS ID RDSON max N-CH 30V 10A 14mΩ P-CH -30V -8.4A 20mΩ Description The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8

AP4506

Contextual Info: AP4506GEH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 30V RDS ON Good Thermal Performance Fast Switching Performance S1 24m ID G1 S2 9A P-CH BVDSS G2 -30V

SDPAK

Abstract: 4004-C 10M45A
Contextual Info: AP6900GH-HF Preliminary Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET CH-1 BVDSS 30V ▼ Fast Switching Performance RDS ON 6.2mΩ ▼ Two Independent Device ▼ Halogen Free & RoHS Compliant Product ID BVDSS RDS(ON) ID 72A

4506GEH

Abstract: AP4506GEH
Contextual Info: AP4506GEH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance 30V RDS ON ▼ Fast Switching Performance S1 24mΩ ID G1 S2 9A P-CH BVDSS

2804SS

Abstract: 2804S N-Channel MOSFET 40V 7A
Contextual Info: CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC2804Q8 BVDSS ID RDSON max N-CH 40V 7A 28mΩ P-CH -40V -6A 44mΩ Description The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8

AP4501GM

Contextual Info: AP4501GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low On-resistance N-CH BVDSS D2 RDS ON D1 D1 ▼ Fast Switching Performance 30V 28mΩ ID G2 S2 -30V P-CH BVDSS

Contextual Info: AP6942GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 N-CH BVDSS Simple Drive Requirement 30V Good Thermal Performance RDS ON 9m Fast Switching Performance ID 15.8A P-CH BVDSS RoHS Compliant & Halogen-Free

Contextual Info: AP4503GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D2 D2 Low On-resistance 30V RDS ON D1 D1 28m ID Fast Switching Performance G2 P-CH BVDSS S2 SO-8 S1 6.9A G1

Contextual Info: AP4226AGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance BVDSS 30V ▼ Simple Drive Requirement RDS ON 18mΩ ▼ Dual N MOSFET Package ID 8.7A ▼ Halogen Free & RoHS Compliant Product

Contextual Info: AP4506GEM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D2 D2 Low On-resistance D1 RDS ON D1 Fast Switching Performance 30m ID G2 S2 SO-8 30V 6.4A P-CH BVDSS G1 S1

AP4506GEH

Abstract: AP4506 24v 6A mosfet
Contextual Info: AP4506GEH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 30V RDS ON ▼ Good Thermal Performance ID ▼ Fast Switching Performance S1 24mΩ G1 S2 9A P-CH BVDSS

Contextual Info: AP4501GSD RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Simple Drive Requirement N-CH BVDSS D2 D1 ▼ Low On-resistance 30V RDS ON D1 ▼ Fast Switching Characteristic 27mΩ ID P-CH BVDSS G2 S2

AP6942GMT-HF

Contextual Info: AP6942GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 N-CH BVDSS ▼ Simple Drive Requirement 30V ▼ Good Thermal Performance RDS ON 9mΩ ▼ Fast Switching Performance ID 15.8A P-CH BVDSS

Contextual Info: AP4521GEH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D1/D2 N-CH BVDSS Good Thermal Performance Fast Switching Performance S1 RoHS Compliant G1 40V RDS ON 36m ID 11.7A P-CH BVDSS

Contextual Info: AP4569GH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 Good Thermal Performance Fast Switching Performance S1 RoHS Compliant G1 40V RDS ON 42m ID 10.5A P-CH BVDSS