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    B06N03 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB06N03LB

    Power Field-Effect Transistor, 50A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPB06N03LB 8,777
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    Infineon Technologies AG IPB06N03LAG

    Power Field-Effect Transistor, 50A I(D), 25V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPB06N03LAG 5,849
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    Infineon Technologies AG IPB06N03LBG

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPB06N03LBG 5,177
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    Infineon Technologies AG IPB06N03LA

    Power Field-Effect Transistor, 50A I(D), 25V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPB06N03LA 4,119
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    B06N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B06N03

    Abstract: MTB06N03Q8 sop8 Package dimension mtb06n03
    Contextual Info: CYStech Electronics Corp. Spec. No. : C710Q8 Issued Date : 2009.05.07 Revised Date : Page No. : 1/6 N-Channel Logic Level Enhancement Mode Power MOSFET B06N03Q8 BVDSS ID RDSON max 30V 18A 6.8mΩ Description The B06N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		c710q8mtb06n03q8ul94v-0b06n03+2sop8 package dimensionmtb06n03 PDF

    B06N03

    Abstract: MTB06N03J3 mtb06n03
    Contextual Info: Spec. No. : C441J3 Issued Date : 2009.03.02 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET BVDSS ID RDS ON B06N03J3 30V 80A 6mΩ Features • 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH


    Original     		c441j3mtb06n03j3o-252ul94v-0+2b06n03mtb06n03 PDF